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P 0805 E 2212 B B
Vishay
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1 | P 0805 E 2212 B B | Resistor Chip | P 0805 E 2212 B B |
3
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SQP90P06-07L_GE3
Vishay
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1 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | Transistor Outline, Vertical | SQP90P06-07L_GE3 |
3
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SQ4005EY-T1_GE3
Vishay
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1 | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | Small Outline Packages | SQ4005EY-T1_GE3 |
3
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P 0805 E 2373 B B
Vishay
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1 | P 0805 E 2373 B B | Resistor Chip | P 0805 E 2373 B B |
3
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158-P02ELK508V3-E
Kobiconn
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1 | Pluggable Terminal Blocks 5.08 P 90DEG 3P | Other | 158-P02ELK508V3-E |
3
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MAX6801UR31D3+T
Analog Devices
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1 | Supervisory Circuits 3-Pin, Low-Power P Reset Circuits | SOT23 (3-Pin) | MAX6801UR31D3+T |
2
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STM32H533VET6
STMicroelectronics
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1 | Includes ST state-of-the-art patented technology\r\nCore\r\n• Arm® Cortex®-M33 CPU with TrustZone®,\r\nFPU, frequency up to 250 MHz, MPU,\r\n375 DMIPS (Dhrystone 2.1)\r\nART Accelerator\r\n• 8-Kbyte instruction cache allowing\r\n0-wait-state execution from flash and external\r\nmemories\r\n• 4-Kbyte data cache for external memories\r\nBenchmarks\r\n• 1.5 DMIPS/MHz (Drystone 2.1)\r\n• 1023 CoreMark® (4.092 CoreMark®/MHz)\r\nMemories\r\n• Up to 512 Kbytes of embedded flash memory\r\nwith ECC, two banks read-while-write\r\n• Up to 48-Kbyte p | Quad Flat Packages | STM32H533VET6 |
3
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TAJP226K002RNJ
Kyocera AVX
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1 | AVX - TAJP226K002RNJ - CAP, TANT, 22UF, 2.5V, CASE P | Capacitor Moulded Polarised | TAJP226K002RNJ |
3
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1-2214934-4
TE Connectivity
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1 | MBCE 2X2 P + 2X6 S VERTICAL | Other | 1-2214934-4 |
3
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1-2214934-4
TE Connectivity
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1 | MBCE 2X2 P + 2X6 S VERTICAL | Other | 1-2214934-4 |
3
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1981061-1
TE Connectivity
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1 | Power to the Board LEAF BATTERY CONN W/B 3POS. P | Other | 1981061-1 |
3
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9-146281-0
TE Connectivity
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1 | Headers & Wire Housings 40 P HEADER GOLD | Header, Vertical | 9-146281-0 |
3
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55935-0635
Molex
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1 | 2.0 WTB PLG HSG ASSY RA 6CKT P | Header, Shrouded - Right Angle PTH Box | 55935-0635 |
3
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GW PUSRA1.PM-N4N6-XX53-1
ams OSRAM
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1 | High Power LEDs - White White OSCONIQ P 3737 (2W) | Other | GW PUSRA1.PM-N4N6-XX53-1 |
3
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PB-5R0V474-R
Eaton
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1 | Supercapacitors / Ultracapacitors .47F 5V EDLC P SERIES CYL | Other | PB-5R0V474-R |
3
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IPD50P04P4L11ATMA1
Infineon
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1 | INFINEON - IPD50P04P4L11ATMA1 - MOSFET, P CH, -40V, -50A, TO-252-3 | Other | IPD50P04P4L11ATMA1 |
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GW DASPA2.UC-HSHU-GPHR-KM
ams OSRAM
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0 | High Power LEDs - White White OSCONIQ P 2226 | Other | GW DASPA2.UC-HSHU-GPHR-KM |
2
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158-P03142RPU-E
Kobiconn
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1 | Fixed Terminal Blocks 5.08 P 90DEG 3P LVR | Other | 158-P03142RPU-E |
3
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R7FA2E2A54CNK#HA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A54CNK#HA1 |
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1888247-1
TE Connectivity
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1 | Configuration Features: Number of Positions 20 | Contact Features: Contact Mating Area Plating Material Thickness .76 MICM | Contact Mating Area Plating Material Gold | Contact Mating Area Plating Material Thickness 29.92 MICIN | Contact Current Rating (Max) .5 AMP | Electrical Characteristics: Data Rate (Max) 16 GBS | Housing Features: Centerline (Pitch) .8 MM | Centerline (Pitch) .031 INCH | Industry Standards: UL Flammability Rating UL 94V-0 | Operation/Application: Circuit Application Power & Signal | P | Other | 1888247-1 |
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63755-1
TE Connectivity
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1 | Contact Features: Terminal Plating Material Tin | Contact Underplating Material Thickness 2.54 MICM | PCB Contact Termination Area Plating Material Thickness 3.81 MICM | Contact Mating Area Plating Material Thickness 150 MICIN | Mating Tab Thickness .81 MM | Mating Tab Thickness .032 INCH | Terminal Size 6.35 | Terminal Orientation Straight | Contact Mating Area Plating Material Thickness 3.81 MICM | Contact Underplating Material Thickness 100 MICIN | Mating Tab Width 6.35 MM | Mating Tab Width .25 INCH | P | Other | 63755-1 |
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R7FA2E2A32DNK#AA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A32DNK#AA1 |
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1718605
Phoenix Contact
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1 | PCB terminal block, nominal current: 16 A, rated voltage (III/2): 630 V, nominal cross section: 1.5 mm?, Number of potentials: 2, Number of rows: 1, Number of positions per row: 2, product range: GSMKDSN 1,5, pitch: 7.62 mm, connection method: Screw connection with tension sleeve, mounting: Wave soldering, conductor/PCB connection direction: 45 ?, color: green, Pin layout: Linear pinning, Solder pin [P]: 3.5 mm, type of packaging: packed in cardboard. The article can be aligned to create different nos. of p | Other | 1718605 |
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ISL8016IR12Z
Renesas Electronics
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1 | The ISL8016 is a high efficiency, monolithic, synchronous step-down DC/DC converter that can deliver up to 6A continuous output current from a 2. 7V to 5. 5V input supply. The output voltage is adjustable from 0. 6V to VIN. With an adjustable current limit, reverse current protection, pre-bias start and over temperature protection the ISL8016 offers a highly robust power solution. It uses current control architecture to deliver fast transient response and excellent loop stability. The ISL8016 integrates a p | Quad Flat No-Lead | ISL8016IR12Z |
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R7FA2E2A73CNJ#BA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A73CNJ#BA1 |
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