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AP7361-33E-13
Diodes Incorporated
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1 | DiodesZetex AP7361-33E-13, LDO Voltage Regulator, 1A, 3.3 V ±2%, 2.2 → 6 Vin, 3+Tab-Pin SOT-223 | SOT223 (3-Pin) | AP7361-33E-13 |
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AP2128K-3.3TRG1
Diodes Incorporated
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1 | DiodesZetex AP2128K-3.3TRG1, Low Noise LDO Voltage Regulator, 3.3 V ±2%, 2.5 → 6 Vin, 5-Pin SOT-23 | SOT23 (5-Pin) | AP2128K-3.3TRG1 |
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NX5P3363UK
NXP
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1 | VIN supply voltage range from 4.0 V to 5.5 V All time reverse current protection with ultra fast RCP recovery Adjustable current limit from 400 mA to 3.3 A Clamped current output in overcurrent condition 29 V high voltage tolerance on VBUS pin Low ON resistance of the power FETs: 35 m (typical) in total Surge protection: IEC61000-4-5 exceeds ±80 V on VBUS Over temperature protectionPACKAGE: WLCSP16 | BGA | NX5P3363UK |
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ISL6336DIRZ-T
Renesas Electronics
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1 | The ISL6336D controls voltage regulators by driving up to 6 interleaved synchronous-rectified buck channels in parallel. This multiphase architecture results in multiplying channel ripple frequency and reducing input and output ripple currents. Lower ripple results in fewer components, lower cost, reduced power dissipation, and smaller implementation area. The ISL6336D utilizes Intersil’s proprietary Active Pulse Positioning (APP), Adaptive Phase Alignment (APA) modulation scheme, active phase adding and dr | Quad Flat No-Lead | ISL6336DIRZ-T |
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ISL6336DIRZ
Renesas Electronics
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1 | The ISL6336D controls voltage regulators by driving up to 6 interleaved synchronous-rectified buck channels in parallel. This multiphase architecture results in multiplying channel ripple frequency and reducing input and output ripple currents. Lower ripple results in fewer components, lower cost, reduced power dissipation, and smaller implementation area. The ISL6336D utilizes Intersil’s proprietary Active Pulse Positioning (APP), Adaptive Phase Alignment (APA) modulation scheme, active phase adding and dr | Quad Flat No-Lead | ISL6336DIRZ |
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ISL6336ACRZ
Renesas Electronics
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1 | The ISL6336, ISL6336A controls microprocessor core voltage regulation by driving up to 6 interleaved synchronous-rectified buck channels in parallel. Multiphase buck converter architecture uses interleaved timing to multiply channel ripple frequency and reduce input and output ripple currents. Lower ripple results in fewer components, lower component cost, reduced power dissipation, and smaller implementation area. Microprocessor loads can generate load transients with extremely fast edge rates and require | Quad Flat No-Lead | ISL6336ACRZ |
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TC1017-3.3VLTTR
Microchip
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1 | Microchip TC1017-3.3VLTTR, LDO Voltage Regulator, 150mA, 3.3 V ±0.5%, 2.7 → 6 Vin, 5-Pin SC-70 | SOT23 (5-Pin) | TC1017-3.3VLTTR |
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MCP1791T-3302E/DC
Microchip
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1 | MCP1791T-3302E/DC, Voltage Regulator, 0.07A, 3.3 V ±2.5%, 6 → 30 Vin, 6-Pin SOT-223 | SOT223 (5-Pin) | MCP1791T-3302E/DC |
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LP3988IMF-3.3/NOPB
Texas Instruments
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1 | Texas Instruments LP3988IMF-3.3/NOPB, LDO Voltage Regulator, 0.15A, 3.3 V 3.5%, 2.5 → 6 Vin, 5-Pin SOT-23 | SOT23 (5-Pin) | LP3988IMF-3.3/NOPB |
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SIP21106DT-33-E3
Vishay
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1 | SIP21106DT-33-E3, Low Dropout Voltage Regulator, 0.15A, 3.3 V ±1%, 2.2 → 6 Vin, 0.305W, 5-Pin TSOT-23 | SOT23 (5-Pin) | SIP21106DT-33-E3 |
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T499B336K006AGE3K0
Yageo Group
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1 | T499, Tantalum, MnO2 Tantalum, High Temperature, 33 uF, 10%, 6.3 VDC, 175°C, -55°C, 85°C, SMD, MnO2, Molded, Hi-Temp, 175C, Auto, AEC-Q200, 6 % , N/A, 3 Ohms, 2100 nA, 107.45 mg, 3528, 1.9mm, Height Max = 2.1mm, 2000, 156 Weeks | Other | T499B336K006AGE3K0 |
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T495C336M016AHE200
Yageo Group
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1 | T495, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 20%, 16 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 200 mOhms, 5300 nA, 224.48 mg, 6032, 2.5mm, Height Max = 2.8mm, 500, 156 Weeks | Other | T495C336M016AHE200 |
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T494A336K004AT
Yageo Group
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1 | T494, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 10%, 4 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 3 Ohms, 1300 nA, 58.6 mg, 3216, 1.6mm, Height Max = 1.8mm, 2000, 156 Weeks | Other | T494A336K004AT |
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T491A336M010AH
Yageo Group
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1 | T491, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 20%, 10 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, 15 % , 6 Ohms, 3300 nA, 58.6 mg, 3216, 1.6mm, Height Max = 1.8mm, 2000, 156 Weeks | Other | T491A336M010AH |
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T496D336K016AHE1K0
Yageo Group
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1 | T496, Tantalum, MnO2 Tantalum, Fused, 33 uF, 10%, 16 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Fused, 6 % , N/A, 1 Ohms, 5300 nA, 446.84 mg, 7343, 2.8mm, Height Max = 3.1mm, 500, 156 Weeks | Other | T496D336K016AHE1K0 |
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T495D336K020ATE2007280
Yageo Group
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1 | T495, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 10%, 20 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 200 mOhms, 6600 nA, 446.84 mg, 7343, 2.8mm, Height Max = 3.1mm, 2500, 156 Weeks | Other | T495D336K020ATE2007280 |
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T496X336K020ATE400
Yageo Group
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1 | T496, Tantalum, MnO2 Tantalum, Fused, 33 uF, 10%, 20 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Fused, 6 % , N/A, 400 mOhms, 6600 nA, 652.04 mg, 7343, 4mm, Height Max = 4.3mm, 500, 156 Weeks | Other | T496X336K020ATE400 |
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T496C336K006ATE2K07280
Yageo Group
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1 | T496, Tantalum, MnO2 Tantalum, Fused, 33 uF, 10%, 6.3 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Fused, 6 % , N/A, 2 Ohms, 2100 nA, 224.48 mg, 6032, 2.5mm, Height Max = 2.8mm, 3000, 156 Weeks | Other | T496C336K006ATE2K07280 |
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T496C336K006AHE600
Yageo Group
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1 | T496, Tantalum, MnO2 Tantalum, Fused, 33 uF, 10%, 6.3 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Fused, 6 % , N/A, 600 mOhms, 2100 nA, 224.48 mg, 6032, 2.5mm, Height Max = 2.8mm, 500, 156 Weeks | Other | T496C336K006AHE600 |
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T499B336M006AGE3K0
Yageo Group
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1 | T499, Tantalum, MnO2 Tantalum, High Temperature, 33 uF, 20%, 6.3 VDC, 175°C, -55°C, 85°C, SMD, MnO2, Molded, Hi-Temp, 175C, Auto, AEC-Q200, 6 % , N/A, 3 Ohms, 2100 nA, 107.45 mg, 3528, 1.9mm, Height Max = 2.1mm, 2000, 156 Weeks | Other | T499B336M006AGE3K0 |
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T491C336M006AT7280
Yageo Group
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1 | T491, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 20%, 6.3 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, 6 % , 1.6 Ohms, 2100 nA, 224.48 mg, 6032, 2.5mm, Height Max = 2.8mm, 3000, 156 Weeks | Other | T491C336M006AT7280 |
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T495D336M020AHE100
Yageo Group
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1 | T495, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 20%, 20 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 100 mOhms, 6600 nA, 446.84 mg, 7343, 2.8mm, Height Max = 3.1mm, 500, 156 Weeks | Other | T495D336M020AHE100 |
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T495D336K025ATE1007280
Yageo Group
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1 | T495, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 10%, 25 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 100 mOhms, 8300 nA, 446.84 mg, 7343, 2.8mm, Height Max = 3.1mm, 2500, 156 Weeks | Other | T495D336K025ATE1007280 |
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T494B336K006AG
Yageo Group
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1 | T494, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 10%, 6.3 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 600 mOhms, 2100 nA, 107.45 mg, 3528, 1.9mm, Height Max = 2.1mm, 2000, 156 Weeks | Other | T494B336K006AG |
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T494X336M035AT7280
Yageo Group
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1 | T494, Tantalum, MnO2 Tantalum, Commercial Grade, 33 uF, 20%, 35 VDC, 125°C, -55°C, 85°C, SMD, MnO2, Molded, Low ESR, 6 % , 300 mOhms, 11.6 uA, 652.04 mg, 7343, 4mm, Height Max = 4.3mm, 2000, 156 Weeks | Other | T494X336M035AT7280 |
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