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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	TLC2272QPWRG4Q1 Texas Instruments	1	Operational Amplifiers - Op Amps Dual Low-Noise R to R Op Amp	Small Outline Packages	TLC2272QPWRG4Q1	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R18FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.18R,±1%	Other	CRG0805-R-1R18FT	3D model available Symbol and footprint available 3	1 Download Model
	IHLP2525CZER1R5MA1 Vishay	1	Inductor Power Shielded Wirewound 1.5uH 20% 100KHz Powdered Iron 9A 0.015Ohm DCR 2525 Automotive T/R	Inductors Precision Moulded	IHLP2525CZER1R5MA1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PR#S1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#S1	3D model available Symbol and footprint available 3	1 Download Model

	IHLP2020CZER1R0M8A Vishay	1	IHLP® Automotive Inductors, High Temperature (180 °C) Series	Inductors Precision Moulded	IHLP2020CZER1R0M8A	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#S1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#S1	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R07FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.07R,±1%	Other	CRG0805-R-1R07FT	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R47FT Venkel	1	High Power CR,0402,1/8W,1.47R,±1%	Resistor Chip	HPCR0402-R-1R47FT	3D model available Symbol and footprint available 3	1 Download Model
	IHLP4040DZER1R0M51 Vishay	1	Fixed Inductors 1uH 20%	Inductors Precision Moulded	IHLP4040DZER1R0M51	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R8JT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.8R,±5%	Other	CRG0805-R-1R8JT	3D model available Symbol and footprint available 3	1 Download Model
	ASPI-0630LR-1R5M-T15 ABRACON	1	1.5 µH Shielded Molded Inductor 10 A 12mOhm Max Nonstandard	Other	ASPI-0630LR-1R5M-T15	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R91FT Venkel	1	High Power CR,0402,1/8W,1.91R,±1%	Resistor Chip	HPCR0402-R-1R91FT	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0408DGE-2PI#B1 Renesas Electronics	1	The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.	Other	R1RW0408DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	ASPI-0520LR-1R0M-T2 ABRACON	1	Inductor Power Molded Wirewound 1uH 20% 7.5A 0.0185Ohm DCR 2220 T/R	Other	ASPI-0520LR-1R0M-T2	3D model available Symbol and footprint available 3	1 Download Model
	IHLP2525EZER1R0M01 Vishay	1	Shielded construction• Frequency range below 1.0 MHz• Lowest DCR/μH, in this package size• Powdered iron composition provides softsaturation• Handles high transient current spikes withoutsaturation• Saturation and inductance extremely stable overtemperature• Ultra low buzz noise, due to composite construction• IHLP design; PATENT(S): www.vishay.com/patents• Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912	Inductors Precision Moulded	IHLP2525EZER1R0M01	3D model available Symbol and footprint available 3	1 Download Model

	CRG0805-R-1R80FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.8R,±1%	Other	CRG0805-R-1R80FT	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R62FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.62R,±1%	Other	CRG0805-R-1R62FT	3D model available Symbol and footprint available 3	1 Download Model
	ASPI-8030LR-1R0M-T ABRACON	1	MEMS Crystal Oscillator 22.5792MHz ÃÂ±50ppm 4-Pin SMD T/R	Inductors Precision Moulded	ASPI-8030LR-1R0M-T	3D model available Symbol and footprint available 3	1 Download Model
	FP1107R1-R51-R Eaton	1	510 nH Unshielded Drum Core, Wirewound Inductor 55 A 0.29mOhm Nonstandard, -40°C ~ 125°C	Other	FP1107R1-R51-R	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R02FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.02R,±1%	Other	CRG0805-R-1R02FT	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0408DGE-2LR#B1 Renesas Electronics	1	SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ \|0°C ~ 70°C (TA)	Other	R1RP0408DGE-2LR#B1	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R1JT Venkel	1	High Power CR,0402,1/8W,1.1R,±5%	Resistor Chip	HPCR0402-R-1R1JT	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PI#D1 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-0PI#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#D1	3D model available Symbol and footprint available 3	1 Download Model
	09792966801 HARTING	1	DIN R (HE11) female angled, 96pin, PL2	Other	09792966801	3D model available Symbol and footprint available 3	1 Download Model
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