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2530N
Signetics
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1 | 2530 -4096 Bit High Speed Static MOS ROM (512 x 8),+0.3 to -20 V,730 mW -65 to +150C | Dual-In-Line Packages | 2530N |
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M27C4002-15F1
STMicroelectronics
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1 | EPROM 4M (256Kx16) 150ns | Ceramic Dual-In-Line Packages | M27C4002-15F1 |
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M10162040108X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0IWAY |
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M30082040054X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040054X0PWAY |
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M10082040054X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040054X0PWAY |
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M10082040054X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAR |
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M30162040054X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAR |
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M30162040054X0PWAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0PWAR |
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M3032316035NX0IBCY
Renesas Electronics
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1 | The M3032316 is a high performance parallel interface non-volatile MRAM with 32Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA package. | BGA | M3032316035NX0IBCY |
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M10162040108X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0PSAY |
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M10162040054X0PSAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0PSAY |
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M30082040054X0PSAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0PSAY |
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M30082040108X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAY |
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TMS27C128-15JE
Texas Instruments
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1 | EEPROM 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85 | Dual-In-Line Packages | TMS27C128-15JE |
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M27C801-100F6
STMicroelectronics
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1 | EPROM 8M (1Mx8) 100ns | Dual-In-Line Packages | M27C801-100F6 |
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M27C4002-80XF1
STMicroelectronics
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1 | STMicroelectronics M27C4002-80XF1, UV Erasable EPROM Memory 4Mbit 256K x 16 bit 80ns 4.75 → 5.25 V 40-Pin | Dual-In-Line Packages | M27C4002-80XF1 |
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M27C2001-10F6
STMicroelectronics
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1 | IC EPROM 2MBIT PARALLEL 32CDIP | Dual-In-Line Packages | M27C2001-10F6 |
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S34ML08G301TFV100
SkyHigh Memory
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1 | NAND Flash SLC,8Gb,1x,3V,x8,0bit,TS248, | Small Outline Packages | S34ML08G301TFV100 |
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M27C800-100F1
STMicroelectronics
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1 | EPROM 1Mx8 or 512Kx16 100n | Dual-In-Line Packages | M27C800-100F1 |
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M27256-2F1
STMicroelectronics
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1 | EPROM, 32K x 8, 28 Pin, Ceramic, DIP | Dual-In-Line Packages | M27256-2F1 |
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DS2401P+
Analog Devices
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1 | Silicon Serial Number DS2401P+, Silicon Serial Number 48bit Surface Mount, 2.8 → 6 V, -40 → +85 °C, 6-Pin, TSOC | Other | DS2401P+ |
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M27C256B-15F1
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Dual-In-Line Packages | M27C256B-15F1 |
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EPC1441TC32N
Intel
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1 | EPC1441TC32N, Serial Flash Memory 440800bit, 3 → 3.6 V, 4.5 → 5.5 V, 32-Pin, TQFP | Quad Flat Packages | EPC1441TC32N |
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S34ML08G301BHI100
SkyHigh Memory
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1 | NAND Flash SLC,8Gb,1x,3V,x8,0bit,VLD63, | BGA | S34ML08G301BHI100 |
2
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M27C4001-80XF1
STMicroelectronics
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1 | EPROM, 512K x 8, 32 Pin, Ceramic, DIP | Dual-In-Line Packages | M27C4001-80XF1 |
3
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