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7006L17G
Renesas Electronics
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1 | The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | Check Price & Stock |
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71V124SA15PHGI
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | Check Price & Stock |
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R1RP0416DSB-2LR#S1
Renesas Electronics
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1 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | Check Price & Stock |
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70T3319S166BFG
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | Check Price & Stock |
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71V3556SA100BGG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | Check Price & Stock |
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70V3319S133BF
Renesas Electronics
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1 | The 70V3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | Check Price & Stock |
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R1RW0416DSB-0PR#S1
Renesas Electronics
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1 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | Check Price & Stock |
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70V3399S133BCI
Renesas Electronics
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1 | The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | Check Price & Stock |
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71256SA20PZGI8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | Check Price & Stock |
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71V3557S80PFG
Renesas Electronics
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1 | The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). | Quad Flat Packages | Check Price & Stock |
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7164S85TDB
Renesas Electronics
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1 | The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | Check Price & Stock |
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70V9289L9PFGI8
Renesas Electronics
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1 | The 70V9289 is a high-speed 64K x 16-bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | Check Price & Stock |
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70V38L15PFG8
Renesas Electronics
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1 | The 70V38 is a high-speed 64K x 18 Dual-Port Static RAM designed to be used as a stand-alone 576K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or more word systems. This MASTER/SLAVE approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | Check Price & Stock |
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70V9079L7PFG
Renesas Electronics
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1 | The 70V9079 is a high-speed 32K x 8 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | Check Price & Stock |
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71V3577S85BGG8
Renesas Electronics
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1 | The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | Check Price & Stock |
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70V657S15BC
Renesas Electronics
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1 | The 70V657 is a high-speed 32K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por | BGA | Check Price & Stock |
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70T659S15BC8
Renesas Electronics
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1 | The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | Check Price & Stock |
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71V3556SA133BGGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | Check Price & Stock |
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70T3319S133BF
Renesas Electronics
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1 | The 70T3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | Check Price & Stock |
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RMLV0414EGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). | Small Outline Packages | Check Price & Stock |
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71V016SA10YG8
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | Check Price & Stock |
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71T75802S200BGI8
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | BGA | Check Price & Stock |
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70T633S10BFG8
Renesas Electronics
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1 | The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | Check Price & Stock |
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7028L15PFG
Renesas Electronics
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1 | The 7028 is a high-speed 64K x 16 Dual-Port Static RAM designed to be used as a stand-alone 1024K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-ormore word systems. An automatic power down feature controlled by the chip enables (CE0 and CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | Check Price & Stock |
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71T75802S166PFGI
Renesas Electronics
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1 | The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers. | Quad Flat Packages | Check Price & Stock |
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