FGD3040G2-F085 Model Download Search Results
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FGD3040G2-F085
onsemi
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1 | SCIS Energy = 300mJ at TJ = 25°C; RoHS Compliant; Qualified to AEC Q101; Logic Level Gate Drive | Other | FGD3040G2-F085 |
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FGD3040G2-F085C
onsemi
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1 | 150W 41A 400V DPAK(TO-252) IGBT Transistors / Modules ROHS , -55°C ~ 175°C (TJ) | Other | FGD3040G2-F085C |
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FGD3040G2-F085V
onsemi
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1 | SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant | Other | FGD3040G2-F085V |
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FGD3040G2_F085
onsemi
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1 | 400V, 26A, 1.35V, 300mJ, DPAK EcoSPARK® II, N-Channel Ignition IGBT, TO-252 3L (DPAK), 5000-TAPE REEL | FGD3040G2_F085 |
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FGD3040G2_F085
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 23.2A I(C), 390V V(BR)CES, N-Channel, TO-252 | FGD3040G2_F085 |
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![Part Image](["https://www.mouser.com/images/onsemiconductor/images/DPAK3-369AS_t.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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