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HM1-65162C-9Z
Renesas Electronics
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0 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162C-9Z |
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HM1-65162C-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162C-9 |
2
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HM1-6551B/883
Renesas Electronics
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1 | The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite | Ceramic Dual-In-Line Packages | HM1-6551B/883 |
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HM1-65642B/883
Renesas Electronics
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1 | The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Renesas 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an arra | Ceramic Dual-In-Line Packages | HM1-65642B/883 |
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APHM1608SGCT
Kingbright
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1 | Standard LEDs - SMD 1.6X0.8MM SMD LED LAMP | Other | APHM1608SGCT |
2
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HM1-65162-9Z
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162-9Z |
2
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HM1-65162B-9Z
Renesas Electronics
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0 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162B-9Z |
2
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HM1-65642/883
Renesas Electronics
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1 | The HM-65642/883 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642/883 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Renesas 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an arra | Ceramic Dual-In-Line Packages | HM1-65642/883 |
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HM1-6514/883
Renesas Electronics
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1 | The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/88 | Ceramic Dual-In-Line Packages | HM1-6514/883 |
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HM1-6514B/883
Renesas Electronics
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1 | The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/88 | Dual-In-Line Packages | HM1-6514B/883 |
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HM1-65162B-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162B-9 |
2
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HM1-65162/883
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | HM1-65162/883 |
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HM1-6617/883
Renesas Electronics
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1 | The HM-6617/883 is a 16, 384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0. 600 inch wide 24 pin SBDIP, the 0. 300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined wi | Ceramic Dual-In-Line Packages | HM1-6617/883 |
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HM1-65162-9
Renesas Electronics
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1 | SRAM | Ceramic Dual-In-Line Packages | HM1-65162-9 |
2
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HM1-65642-9
Renesas Electronics
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1 | The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Intersil 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642 is a full CMOS RAM which utilizes an array of six tr | Ceramic Dual-In-Line Packages | HM1-65642-9 |
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HM1-6642B/883
Renesas Electronics
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1 | The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device High-Speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with recent generation microprocessors that use multiplexed address/data bus structures, such as the 8085. The output enable controls, both active low and active high, further simpli | Ceramic Dual-In-Line Packages | HM1-6642B/883 |
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HM1-65162C/883
Renesas Electronics
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1 | The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Renesas Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which allows easy memory board layouts flexible to accommodate a variety of industry standard PROMs, RAMs, ROMs and EPROMs. The HM-65162/883 is ideally suited for use in microprocessor based systems with its 8-bit word length organization. | Ceramic Dual-In-Line Packages | HM1-65162C/883 |
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CDBHM160L-HF
Comchip Technology
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1 | Schottky Diodes & Rectifiers Schottky Brdge Rect 1A 60V Low Vf | Small Outline Packages | CDBHM160L-HF |
3
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HHM1603A1
TDK
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1 | Baluns, Pass Band=2300 to 2700MHz, Bal. Port Zc=100Ohm | Other | HHM1603A1 |
3
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APHM1608VRBXF/A-5MAV
Kingbright
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1 | Standard LEDs - SMD 1608 SMD LED Blue | LEDs Chip | APHM1608VRBXF/A-5MAV |
2
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ELVH-M160G-HKNJ-C-N5A4
Amphenol
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1 | AMPHENOL ALL SENSORS - ELVH-M160G-HKNJ-C-N5A4 - Pressure Sensor, 160 mbar, I2C Digital, Gauge, 3.3 VDC, Single Axial Barbless, 3.1 mA | Other | ELVH-M160G-HKNJ-C-N5A4 |
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FBMH4525HM162NT
TAIYO YUDEN
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1 | Ferrite Beads HI CUR CHIP BD 1810 1600OHMS 30% | Ferrite Bead Chip | FBMH4525HM162NT |
3
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MSCSM120HM16CT3AG
Microchip
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1 | PM-MOSFET-SIC-SBD~-SP3F | Other | MSCSM120HM16CT3AG |
3
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AT21CS01-SSHM16-T
Microchip
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1 | EEPROM SEEPROM, 1K, SW - 1.7-3.6V, 125Kbps, Ind Tmp, 8-SOIC | Small Outline Packages | AT21CS01-SSHM16-T |
3
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AT21CS01-SSHM16-T
Microchip
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1 | EEPROM SEEPROM, 1K, SW - 1.7-3.6V, 125Kbps, Ind Tmp, 8-SOIC | Small Outline Packages | AT21CS01-SSHM16-T |
3
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