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LA-501VN
ROHM Semiconductor
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1 | Pantallas y accesorios de LED 1DIGIT 8LED RED CC DISP MOD | Dual-In-Line Sockets | LA-501VN |
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LA-501VD
ROHM Semiconductor
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1 | LED Displays & Accessories 1DIGIT 8LED RED CA DISP MOD | Dual-In-Line Sockets | LA-501VD |
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CLA50E1200TC-TRL
LITTELFUSE
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1 | SCR 1.2 kV 79 A Standard Recovery Surface Mount TO-268AA , 75mA , 50 µA , -40°C ~ 150°C | Other | CLA50E1200TC-TRL |
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SLA5064
SANKEN ELECTRIC CO.
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1 | Mosfet Array 60V 10A 5W Through Hole 12-SIP 3 N and 3 P-Channel (3-Phase Bridge) 150°C (TJ) | Other | SLA5064 |
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AMPLA5030S-100M
ABRACON
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1 | 10 µH Shielded Molded Inductor 2.75 A 128mOhm Max Nonstandard | Other | AMPLA5030S-100M |
3
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7202LA50SO8
Renesas Electronics
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1 | The 7202 is a 1K x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. | Small Outline Packages | 7202LA50SO8 |
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AMPLA5030S-150M
ABRACON
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1 | AMPLA5030S-150M | Inductors Precision Moulded | AMPLA5030S-150M |
3
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7201LA50DB
Renesas Electronics
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1 | The 7201 is a 512 x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. | Ceramic Dual-In-Line Packages | 7201LA50DB |
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7202LA50SO
Renesas Electronics
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1 | The 7202 is a 1K x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. | Small Outline Packages | 7202LA50SO |
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7201LA50TDB
Renesas Electronics
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1 | The 7201 is a 512 x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. | Ceramic Dual-In-Line Packages | 7201LA50TDB |
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AMPLA5030Q-1R0MT
ABRACON
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1 | 1 µH Shielded Molded Inductor 7 A 14mOhm Max Nonstandard | Other | AMPLA5030Q-1R0MT |
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AMPLA5030S4R7MT
ABRACON
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1 | INDUCTOR, 4.7UH, SHIELDED, 4.6A; Inductance:4.7µH; RMS Current (Irms):4.6A; Inductor Construction:Shielded; Saturation Current (Isat):6A; Product Range:AMPLA5030S Series; Power Inductor Case:5.7mm x 5.2mm x 2.8mm RoHS Compliant: Yes | Inductors Precision Moulded | AMPLA5030S4R7MT |
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SMTLA5050RGBW
Bivar
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1 | Multi-Color LEDs 5050 SMD Addressable LED Top View Package, RGBW | Other | SMTLA5050RGBW |
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AMPLA5030S1R0MT
ABRACON
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1 | INDUCTOR, 1UH, SHIELDED, 7A; Inductance:1µH; RMS Current (Irms):7A; Inductor Construction:Shielded; Saturation Current (Isat):11A; Product Range:AMPLA5030S Series; Power Inductor Case:5.7mm x 5.2mm x 2.8mm; DC Resistance Max:0.014ohmRoHS Compliant: Yes | Inductors Precision Moulded | AMPLA5030S1R0MT |
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AMPLA5030S100MT
ABRACON
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1 | INDUCTOR, 10UH, SHIELDED, 2.75A; Inductance:10µH; RMS Current (Irms):2.75A; Inductor Construction:Shielded; Saturation Current (Isat):3.5A; Product Range:AMPLA5030S Series; Power Inductor Case:5.7mm x 5.2mm x 2.8mm RoHS Compliant: Yes | Inductors Precision Moulded | AMPLA5030S100MT |
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AMPLA5030S-2R2MT
ABRACON
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1 | Inductor Power Shielded/Molded Wirewound 2.2uH 20% 100KHz Carbonyl Powder 5.5A 0.035Ohm DCR 2220 T/R | Inductors Precision Moulded | AMPLA5030S-2R2MT |
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P240FZ4QLA-5071
Shindengen Electric Manufacturing Co., Ltd.
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1 | Power MOSFETs 40V, 240A, N-channel,TO-263SC | Other | P240FZ4QLA-5071 |
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LGR2G221MELA50
Nichicon
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1 | Aluminum Electrolytic Capacitors - Snap In 400volts 220uF Long Life | Other | LGR2G221MELA50 |
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LGG2E102MELA50
Nichicon
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1 | 1000 µF 250 V Aluminum Electrolytic Capacitors Radial, Can - Snap-In 2000 Hrs @ 105°C ,-40°C ~ 105°C | Capacitor, Polarized Radial Diameter | LGG2E102MELA50 |
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SLA5085
SANKEN ELECTRIC CO.
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1 | Mosfet Array 60V 10A 5W Through Hole 12-SIP | Other | SLA5085 |
3
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D15FR60LA-5071
Shindengen Electric Manufacturing Co., Ltd.
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1 | Diode: rectifying; SMD; 600V; 15A; 30ns; TO252AA; Ufmax: 2.1V | Other | D15FR60LA-5071 |
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AMPLA5030S-100MT
ABRACON
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1 | 10 µH Shielded Molded Inductor 2.75 A 128mOhm Max Nonstandard | Other | AMPLA5030S-100MT |
3
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AMPLA5030S-6R8M
ABRACON
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1 | AMPLA5030S-6R8M | Inductors Precision Moulded | AMPLA5030S-6R8M |
3
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AMPLA5030Q4R7MT
ABRACON
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1 | 4.7 µH Shielded Molded Inductor 4.6 A 53mOhm Max Nonstandard | Other | AMPLA5030Q4R7MT |
3
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CLA50E1200TC
LITTELFUSE
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1 | IXYS, CLA50E1200TC, Thyristor, 1200V 50A, 80mA 3+Tab-Pin, TO-268AA | Other | CLA50E1200TC |
2
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![Part Image](["https://componentsearchengine.com/Images/3/LA-501VN.jpg",null,null])
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![Part Image](["https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/FZ-7p.jpg","https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/FZ-7p.jpg",null])
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![Part Image](["https://www.mouser.com/images/abracon/images/AMPLA5030S_series_DSL.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1630_AMPLA5030S.jpg"])
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