MMBT5551 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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MMBT5551 onsemi
1 Obsolete - High Voltage NPN Bipolar Transistor SOT23 (3-Pin) MMBT5551 1 Download Model
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MMBT5551 Rectron
1 Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt SOT23 (3-Pin) MMBT5551 1 Download Model
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MMBT5551 Diodes Incorporated
1 Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 350 mW Surface Mount SOT-23-3 ,-55°C ~ 150°C SOT23 (3-Pin) MMBT5551 1 Download Model
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MMBT5551 TAITRON COMPONENTS
1 Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R SOT23 (3-Pin) MMBT5551 1 Download Model
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MMBT5551 Diotec
1 Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 250 mW Surface Mount SOT-23-3 (TO-236) , 300 MHz , -55°C ~ 150°C (TJ) Other MMBT5551 1 Download Model
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MMBT5551 Rochester Electronics
1 Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 350 mW Surface Mount SOT-23-3 SOT23 (3-Pin) MMBT5551 1 Download Model
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MMBT5551 Lite-On Semiconductor Corporation
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 Infinex
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 SY Sinyork Co Ltd
1 Transistor MMBT5551 0 Build or Request
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MMBT5551 Freescale Semiconductor
1 TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),TO-236AA MMBT5551 0 Build or Request
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MMBT5551 NTE Electronics Inc
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 EDI Diodes (Electronic Devices Inc)
1 Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 Microdiode Semiconductor (MDD)
1 SOT-23 Plastic-Encapsulate Transistors, NPN, BASE, EMITTER, COLLECTOR. MMBT5551 0 Build or Request
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MMBT5551 AK Semiconductor
1 NPN transistor in SOT-23 package with 160V collector-emitter breakdown voltage, 0.6A continuous collector current, 300mW power dissipation, and DC current gain (hFE) ranging from 100 to 300 at 1.0mA collector current. MMBT5551 0 Build or Request
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MMBT5551 Galaxy Semi-Conductor Co Ltd
1 Transistor, MMBT5551 0 Build or Request
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MMBT5551 Weitronic Enterprise Co Ltd
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 Fairchild Semiconductor Corporation
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 Jiangsu Changjiang Electronics Technology Co Ltd
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 CREATEK Microelectronics
1 High voltage NPN transistor in SOT-23 package, with 160 V collector-emitter breakdown voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. MMBT5551 0 Build or Request
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MMBT5551 Shenzhen Heketai Electronics Co Ltd
1 NPN bipolar transistor in SOT-23 package, with 160 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300, suitable for medium power amplification and switching applications. MMBT5551 0 Build or Request
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MMBT5551 Texas Instruments
1 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB MMBT5551 0 Build or Request
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MMBT5551 National Semiconductor Corporation
1 Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB MMBT5551 0 Build or Request
Part Image Part Image 1 Small Signal Bipolar Transistors MMBT5551 1 Download Model
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MMBT5551 Secos Corporation
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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MMBT5551 Suzhou Good-Ark Electronics Co Ltd
1 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon MMBT5551 0 Build or Request
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