NUP31 Model Download Search Results

Showing 13 of 13 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NUP3115UPMUTAG onsemi	1	Low Capacitance Data Lines (0.8pF Typical between I/O and GND); Protects up to Three Data Lines Plus a Vcc Pin; UDFN Package, 1.6 x 1.6mm; Low Profile of 0.50mm for Ultra Slim Design; ESD Rating: IEC6100042: Level, Contact (8kV); Vcc Pin = 15 V Protection; D1, D2, and D3 Pins = 6.4 V Minimum Protection; This is a Pb-Free Device	Small Outline No-lead	NUP3115UPMUTAG	3D model available Symbol and footprint available 3	1 Download Model
	NUP3105LT1G onsemi	1	350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an	SOT23 (3-Pin)	NUP3105LT1G	3D model available Symbol and footprint available 3	1 Download Model
	NUP3105LT3G onsemi	1	350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an	SOT23 (3-Pin)	NUP3105LT3G	3D model available Symbol and footprint available 3	1 Download Model
	SZNUP3105LT3G onsemi	1	350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an	SOT23 (3-Pin)	SZNUP3105LT3G	3D model available Symbol and footprint available 3	1 Download Model

	SZNUP3105LT1G onsemi	1	350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an	SOT23 (3-Pin)	SZNUP3105LT1G	3D model available Symbol and footprint available 3	1 Download Model
	SZNUP3125WTT1G onsemi	1	120 W Peak Power Dissipation per Line (8/20 µs Waveform); 10 pF Overall Capacitance with Diode Capacitance Matching; Low Reverse Leakage Current (< 100 nA); IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 3.0 A (8/20 µs); Flammability Rating UL 94 V−0; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an	SOT23 (3-Pin)	SZNUP3125WTT1G	3D model available Symbol and footprint available 3	1 Download Model
	NUP3105L Diotec Semiconductor AG	1	Trans Voltage Suppressor Diode, 295W, 32V V(RWM), Bidirectional, 2 Element, Silicon, TO-236		NUP3105L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NUP3125WTT1G onsemi	1	Trans Voltage Suppressor Diode, 120W, 32V V(RWM), Bidirectional, 2 Element, Silicon		NUP3125WTT1G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NUP3112UPMUTAG Rochester Electronics LLC	1	UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, 1.60 X 1.60 MM, 0.50 MM HEIGHT, LEAD FREE, CASE 517AP-01, UDFN-6		NUP3112UPMUTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NUP3112UPMUTAG onsemi	1	Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional, 4 Element, Silicon		NUP3112UPMUTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NUP3125WTT3G onsemi	1	Trans Voltage Suppressor Diode, 120W, 32V V(RWM), Bidirectional, 2 Element, Silicon		NUP3125WTT3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	SZNUP3112UPMUTAG onsemi	1	Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional, 4 Element, Silicon		SZNUP3112UPMUTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	SZNUP3125WTT3G onsemi	1	120 W Peak Power Dissipation per Line (8/20 µs Waveform); 10 pF Overall Capacitance with Diode Capacitance Matching; Low Reverse Leakage Current (< 100 nA); IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 3.0 A (8/20 µs); Flammability Rating UL 94 V−0; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an		SZNUP3125WTT3G	3D model available Symbol and footprint not available 1	1 Download Model

Can't find what you're looking for? Request this part