SS35_ Model Download Search Results
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SS35V/20170
Yageo Group
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1 | SS35V/20170 | Other | SS35V/20170 |
3
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1SS356TE-11
ROHM Semiconductor
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0 | Band Switching Diode | Other | 1SS356TE-11 |
3
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PBSS3540M-QYL
Nexperia
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1 | 40 V, 0.5 A PNP low VCEsat transistor | Other | PBSS3540M-QYL |
3
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1SS351-TB-E
onsemi
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1 | Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller; Small interterminal capacitance (C=0.69pF typ); Small forward voltage (VF=0.23V max) | SOT23 (3-Pin) | 1SS351-TB-E |
3
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1SS356VMFHTE-17
ROHM Semiconductor
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1 | 35V 1.2pF, UMD2, Low rF Band Switching Diode for Automotive (AEC-Q101 Qualified) | Other | 1SS356VMFHTE-17 |
3
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1SS357-TP
MCC
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1 | Switching Diodes | Small Outline Diode | 1SS357-TP |
3
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1SS357(F)
Toshiba
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1 | Toshiba 45V 100mA, Schottky Diode, 2-Pin SOD-323 1SS357(F) | Other | 1SS357(F) |
3
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1SS355TE-17
ROHM Semiconductor
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1 | Diode Switching 90V 225mA SOD-323 ROHM 1SS355TE-17 Rectifier Diode, 0.225A, 90V, 2-Pin UMD | Small Outline Diode Flat Lead | 1SS355TE-17 |
3
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DSS3540M-7B
Diodes Incorporated
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1 | Bipolar (BJT) Transistor PNP 40 V 500 mA 100MHz 250 mW Surface Mount X1-DFN1006-3 | Other | DSS3540M-7B |
2
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1SS355L-TP
MCC
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1 | Switching Diodes | Small Outline Diode | 1SS355L-TP |
2
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1SS355
Taiwan Semiconductor
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1 | Diode Small Signal Switching 90V 0.25A 2-Pin SOD-323F | Small Outline Diode Flat Lead | 1SS355 |
3
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1SS355-TP
MCC
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1 | Switching Diodes | Small Outline Diode | 1SS355-TP |
3
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1SS352
Toshiba
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1 | Diodes - General Purpose, Power, Switching Vr=80V If=0.1A 2Pin | Small Outline Diode | 1SS352 |
3
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SS351AT
Honeywell
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1 | Sensor Omnipolar Hall Effect Digital Pos Honeywell SS351AT, Omnipolar Hall Effect Sensor 3-Pin SOT-23, 3 → 24 V dc | SOT23 (3-Pin) | SS351AT |
3
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TPLH-3R0/350SS35X61
Tecate Group
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1 | CAP 350F 3V THROUGH HOLE | Other | TPLH-3R0/350SS35X61 |
3
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1SS355VMFHTE-17
ROHM Semiconductor
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1 | High-speed switching, 80V, 100mA, Switching Diode for Automotive | Other | 1SS355VMFHTE-17 |
3
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1SS355L-13P
MCC
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1 | High Speed Switching Diode• Fast Switching Speed• For General Purpose Switching Applications• Moisture Sensitivity Level 1• Epoxy Meets UL 94 V-0 Flammability Rating• Halogen Free. “Green” Device (Note 1)• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) | Small Outline Diode | 1SS355L-13P |
2
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NSS35200MR6T1G
onsemi
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1 | High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | Small Outline Packages | NSS35200MR6T1G |
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1SS357
Toshiba
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1 | 40 V/0.1 A Schottky Barrier Diode, SOD-323(USC) | Other | 1SS357 |
3
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1SS355VM
ROHM Semiconductor
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1 | Switching Diode | Other | 1SS355VM |
3
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CFF-HC24S-S352-N120T(LF)(SN)
JST (JAPAN SOLDERLESS TERMINALS)
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1 | 24 Position Card Connector CFast™ Card Surface Mount, Right Angle Gold | Other | CFF-HC24S-S352-N120T(LF)(SN) |
3
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1SS355-13P
MCC
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1 | Diodes - General Purpose, Power, Switching | Small Outline Diode | 1SS355-13P |
3
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SS35
onsemi
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1 | Metal to Silicon Rectifiers, Majority Carrier Conduction; Easy Pick and Place; High-Surge Current Capability; Low-Forward Voltage Drop | Diodes Moulded | SS35 |
3
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PBSS3540E
Nexperia
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1 | PBSS3540E, PNP Bipolar Transistor, 0.5 A 40 V HFE:40 300 MHz Small Signal, 3-Pin SMPAK | SOT23 (3-Pin) | PBSS3540E |
3
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PSS35S92F6-AG
Mitsubishi
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1 | Power Driver Module IGBT 3 Phase 600 V 35 A 25-PowerDIP Module (1.134", 28.80mm) , 1500Vrms , Through Hole | Other | PSS35S92F6-AG |
3
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![Part Image](["https://componentsearchengine.com/2D/0T/15648649.1.6.png",null,null])
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![Part Image](["https://www.mouser.com/images/taiwansemiconductor/images/SOD-323F-2_SPL.jpg",null,null])
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