Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W631GU6MB09W
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU6MB09W |
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W634GU8RB09K
Winbond
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1 | DDR3 SDRAM 2133MHz | BGA | W634GU8RB09K |
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W955N8MBYA5S
Winbond
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1 | 32Mb HYPERRAM 400MHz TFBGA (5X5)24 | BGA | W955N8MBYA5S |
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W632GG6NB15W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6NB15W |
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W631GG8MB11W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB11W |
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W29N04GVBAAF
Winbond
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1 | 4Gb SLC NAND Flash MHz VFBGA63 | BGA | W29N04GVBAAF |
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W25Q64JWZESM
Winbond
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1 | New Family of SpiFlash Memories– W25Q64JW: 64M-bit / 8M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.7V to 1.95Vsupply– <1µA Power-down (typ.)– -40°C to +85°C operating range F | Small Outline No-lead | W25Q64JWZESM |
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W25Q10RLXHJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q40RL: 4M-bit /512K-byte (524,288)W20Q20RL: 2M-bit /256K-byte (262,144)W20Q10RL: 1M-bit /128K-byte (131,072)– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More | Small Outline No-lead | W25Q10RLXHJQ |
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W971GG6NB18K
Winbond
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1 | 1Gb DDR2 SDRAM 1066MHz VFBGA84 | BGA | W971GG6NB18K |
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W25N04KVZEJR
Winbond
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1 | 4Gb QspiNAND Flash 104MHz SON8 | Small Outline No-lead | W25N04KVZEJR |
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W25N01KWZEJT
Winbond
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1 | FLASH - NAND Memory IC 1Gbit SPI 104 MHz 8-WSON (8x6) | Small Outline No-lead | W25N01KWZEJT |
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W634GG6NB09W
Winbond
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1 | DDR3 SDRAM 2133MHz | BGA | W634GG6NB09W |
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W632GU6MB11K
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU6MB11K |
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W631GU6MB12K
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU6MB12K |
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W25Q32JVTBSM
Winbond
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1 | 32Mb Serial NOR Flash 133MHz TFBGA (5X5)24 | BGA | W25Q32JVTBSM |
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W25Q512NWFJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q512NW: 512M-bit / 64M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient Read– Allows true XIP (execute i | Small Outline Packages | W25Q512NWFJQ |
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W632GG8NB12W
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W632GG8NB12W |
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W631GU8MB12K
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB12K |
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W631GG6MB12W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB12W |
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W631GG8NB11A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG8NB11A |
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W25Q32JVZPSM
Winbond
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1 | SON8 | Small Outline No-lead | W25Q32JVZPSM |
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W25Q12PWZEIQ
Winbond
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1 | 128Mb Serial NOR Flash 166MHz SON8 | Small Outline No-lead | W25Q12PWZEIQ |
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W25Q64JWXGSM
Winbond
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1 | New Family of SpiFlash Memories– W25Q64JV: 64M-bit / 8M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Low Power, Wide Temperature Range– Single 2.7 to 3.6V supply– <1µA Power-down (typ.)– -40°C to +85°C op | Small Outline No-lead | W25Q64JWXGSM |
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W631GU6NB09S
Winbond
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1 | 1Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W631GU6NB09S |
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W632GU8RB11A
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU8RB11A |
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