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FDMS86101A - onsemi

Description: MSL1 robust package design ; 100% Rg tested; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; Shielded Gate MOSFET Technology

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PCB Footprints
FDMS86101A - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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3D Models
FDMS86101A - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS86101A Details

  • Manufacturer Part Number:

    FDMS86101A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86101A Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS86101A involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the compensation network, start by selecting the correct compensation components based on the output capacitor value and the desired crossover frequency. Then, use a network analyzer or a simulation tool to fine-tune the compensation network for optimal stability and transient response.
  • The maximum allowed voltage on the EN pin of the FDMS86101A is 6V. Exceeding this voltage may damage the device. It's recommended to use a voltage divider or a level shifter to ensure the EN pin voltage remains within the specified range.
  • Yes, the FDMS86101A can be used in a synchronous rectification configuration. However, it's essential to ensure that the device is properly configured and that the synchronous rectifier is properly sized to handle the output current and voltage.
  • To handle thermal management, ensure good airflow around the device, use a heat sink if necessary, and follow the recommended PCB layout guidelines. Additionally, monitor the device temperature and adjust the operating conditions to prevent overheating.

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FDMS86101A Overview

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