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SI7121DN-T1-GE3 - Vishay

Description: MOSFET 30V 16A 52W 1.8mohm @ 10V

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PCB Footprints
SI7121DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_111
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3D Models
SI7121DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_111
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SI7121DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7121DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10.6 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7121DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7121DN-T1-GE3 should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI7121DN-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is also sensitive to moisture, so ensure proper storage and handling in a dry environment.
  • The SI7121DN-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. Consult with Vishay Intertechnologies for specific guidance on using this device in such applications.
  • Follow the recommended soldering and rework conditions outlined in the datasheet, including peak temperatures, soldering times, and rework techniques. Ensure that the device is not exposed to excessive temperatures or mechanical stress during the assembly process.

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SI7121DN-T1-GE3 Overview

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