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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	7006S25G Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7006S25G	3D model available Symbol and footprint available 3	1 Download Model
	7026L25GB Renesas Electronics	1	The 7026 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7026L25GB	3D model available Symbol and footprint available 3	1 Download Model
	71V2556S100PFGI Renesas Electronics	1	The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V2556S100PFGI	3D model available Symbol and footprint available 3	1 Download Model
	7026L35G Renesas Electronics	1	The 7026 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7026L35G	3D model available Symbol and footprint available 3	1 Download Model

	70V7319S133BF Renesas Electronics	1	The 70V7319 is a high-speed 256K x 18 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7319S133BF	3D model available Symbol and footprint available 3	1 Download Model
	70V9279L7PRFG Renesas Electronics	1	The 70V9279 is a high-speed 32K x 16 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V9279L7PRFG	3D model available Symbol and footprint available 3	1 Download Model
	70V658S15BC8 Renesas Electronics	1	The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V658S15BC8	3D model available Symbol and footprint available 3	1 Download Model
	71V3579S85PFG Renesas Electronics	1	The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V3579S85PFG	3D model available Symbol and footprint available 3	1 Download Model
	70V639S10BF Renesas Electronics	1	The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V639S10BF	3D model available Symbol and footprint available 3	1 Download Model
	71321LA20TFG Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Quad Flat Packages	71321LA20TFG	3D model available Symbol and footprint available 3	1 Download Model
	71V321L35JG8 Renesas Electronics	1	The 71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor communications. The device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	71V321L35JG8	3D model not available Symbol and footprint available 2	1 Download Model
	71V67903S75BQ Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67903S75BQ	3D model available Symbol and footprint available 3	1 Download Model
	70T653MS10BCG Renesas Electronics	1	The 70T653M is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone 18874K-bit Dual-Port RAM. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T653MS10BCG	3D model available Symbol and footprint available 3	1 Download Model
	71V25761S166PFG8 Renesas Electronics	1	The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V25761S166PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71T75602S150PFG8 Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	Quad Flat Packages	71T75602S150PFG8	3D model available Symbol and footprint available 3	1 Download Model

	70V07L25PFG8 Renesas Electronics	1	The 70V07 is a high-speed 32K x 8 Dual-Port Static RAM designed to be used as a stand-alone 256K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V07L25PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70V3589S133BCI8 Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3589S133BCI8	3D model available Symbol and footprint available 3	1 Download Model
	70V24S55PFG Renesas Electronics	1	The 70V24 is a high-speed 4K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V24S55PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V424L10YGI Renesas Electronics	1	The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V424L10YGI	3D model available Symbol and footprint available 3	1 Download Model
	70T653MS12BC8 Renesas Electronics	1	The 70T653M is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone 18874K-bit Dual-Port RAM. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T653MS12BC8	3D model available Symbol and footprint available 3	1 Download Model
	70V3379S6BF8 Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3379S6BF8	3D model available Symbol and footprint available 3	1 Download Model
	M48T08-100PC1 STMicroelectronics	1	STMicroelectronics M48T08-100PC1 NVRAM, 64kbit, 100ns 28-Pin PCDIP	Dual-In-Line Packages	M48T08-100PC1	3D model available Symbol and footprint available 3	1 Download Model
	70V261L25PFGI8 Renesas Electronics	1	The 70V261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V261L25PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70V3589S133DRG8 Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	Quad Flat Packages	70V3589S133DRG8	3D model available Symbol and footprint available 3	1 Download Model
	7164S100DB Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	7164S100DB	3D model not available Symbol and footprint available 2	1 Download Model
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