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PJS6403
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJS6403, P Polarity, Single, -6.4A, -30V, SOT-23 6L | SOT23 (6-Pin) | PJS6403 |
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PJQ5863A-AU
PANJIT
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1 | Medium Voltage MOSFET (60-200V,Rds(on)<1Ω) - PJQ5863A-AU , AEC-Q101, P Polarity, Dual, -13.6A, -60V, DFN5060B-8L | Other | PJQ5863A-AU |
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PJQ5445-AU
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJQ5445-AU, AEC-Q101, P Polarity, Single, -45A, -40V, DFN5060-8L | Other | PJQ5445-AU |
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PJQ4465AP
PANJIT
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1 | Medium Voltage MOSFET (60-200V,Rds(on)<1Ω) - PJQ4465AP , P Polarity, Single, -16A, -60V, DFN3333-8L | Other | PJQ4465AP |
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TP5335K1-G
Microchip
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1 | MICROCHIP - TP5335K1-G - Power MOSFET, DMOS, P Channel, 350 V, 85 mA, 30 ohm, TO-236AB, Surface Mount | SOT23 (3-Pin) | TP5335K1-G |
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FDC5614P
onsemi
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1 | ON SEMICONDUCTOR - FDC5614P - MOSFET Transistor, P Channel, -3 A, -60 V, 0.105 ohm, -10 V, -1.6 V | SOT23 (6-Pin) | FDC5614P |
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NCE4614
Wuxi NCE Power Semiconductor
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1 | MOSFET N & P Channel 40V 8A(Tc),7A(Tc) 2V @ 250uA 19mΩ @ 8A,10V;35mΩ @ 8A,10V SOIC-8_150mil RoHS | Small Outline Packages | NCE4614 |
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IPD900P06NMATMA1
Infineon
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1 | INFINEON - IPD900P06NMATMA1 - Power MOSFET, P Channel, 60 V, 16.4 A, 0.075 ohm, TO-252 (DPAK), Surface Mount | Other | IPD900P06NMATMA1 |
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CMF5030R900FHEB
Vishay
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1 | 5 % (D), ± 0.25 % (C) and ± 0.1 % (B) are available only in 50 p | Resistors, Axial Diameter Horizontal Mounting | CMF5030R900FHEB |
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M39014/02-1411
KEMET
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1 | LDD Mil X7R PRF39014, Ceramic, 1 uF, 10%, 50 VDC, BX, P (0.1%/1000 Hrs),nLead Spacing = 5.08mm | Other | M39014/02-1411 |
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IRF7404TRPBF
Infineon
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1 | INFINEON - IRF7404TRPBF - MOSFET Transistor, P Channel, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV | Small Outline Packages | IRF7404TRPBF |
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TLJP336M010R3500
Kyocera AVX
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1 | Cap Tant Solid 33uF 10V P CASE 20% (2.05 X 1.35 X 1.5mm) SMD 2012-15 3.5 Ohm 125C T/R | Capacitor Moulded Polarised | TLJP336M010R3500 |
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BSH202,215
Nexperia
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1 | NEXPERIA - BSH202,215 - Power MOSFET, P Channel, 30 V, 520 mA, 0.63 ohm, SOT-23, Surface Mount | SOT23 (3-Pin) | BSH202,215 |
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IRF7416TRPBF
Infineon
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1 | INFINEON - IRF7416TRPBF - MOSFET Transistor, P Channel, 10 A, 30 V, 0.02 ohm, 10 V, 2.04 V | Small Outline Packages | IRF7416TRPBF |
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SIA931DJ-T1-GE3
Vishay
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1 | VISHAY - SIA931DJ-T1-GE3 - Dual MOSFET, P Channel, 30 V, 4.5 A, 0.052 ohm, PowerPAK SC70, Surface Mount | Other | SIA931DJ-T1-GE3 |
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TPS26621DRCR
Texas Instruments
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1 | Hot Swap Voltage Controllers 4.5-V to 60-V, 478mΩ, 0.025-0.88A eFuse with integrated input and output reverse polarity p 10-VSON -40 to 125 | Other | TPS26621DRCR |
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1726066
Phoenix Contact
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1 | PCB terminal block, nominal current: 13.5 A, rated voltage (III/2): 400 V, nominal cross section: 1.5 mm?, Number of potentials: 6, Number of rows: 2, Number of positions per row: 3, product range: MKKDSN 1,5, pitch: 5.08 mm, connection method: Screw connection with tension sleeve, mounting: Wave soldering, conductor/PCB connection direction: 0 ?, color: green, Pin layout: Linear pinning, Solder pin [P]: 3.5 mm, type of packaging: packed in cardboard. The article can be aligned to create different nos. of p | Other | 1726066 |
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1843004
Phoenix Contact
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1 | PCB header, nominal cross section: 1.5 mm?, color: green, nominal current: 8 A, rated voltage (III/2): 160 V, contact surface: Tin, type of contact: Male connector, Number of potentials: 22, Number of rows: 2, Number of positions per row: 11, number of connections: 22, product range: MCD 1,5/..-G1F, pitch: 3.81 mm, mounting: Wave soldering, pin layout: Linear pinning, solder pin [P]: 3.5 mm, Stecksystem: MINI COMBICON, Locking: Screw locking, type of packaging: packed in cardboard, In combination with MCV p | Other | 1843004 |
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R7FA2E2A33CNK#BA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A33CNK#BA1 |
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1715828
Phoenix Contact
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1 | PCB terminal block, nominal current: 17.5 A, rated voltage (III/2): 400 V, nominal cross section: 1.5 mm?, Number of potentials: 12, Number of rows: 1, Number of positions per row: 12, product range: MKDS 1,5, pitch: 5.08 mm, connection method: Screw connection with tension sleeve, mounting: Wave soldering, conductor/PCB connection direction: 0 ?, color: green, Pin layout: Linear pinning, Solder pin [P]: 3.5 mm, type of packaging: packed in cardboard. The article can be aligned to create different nos. of p | Other | 1715828 |
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W25N04KWZEJU
Winbond
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1 | New W25N Family of QspiNAND\r\nMemories\r\n– W25N04KW: 4G-bit / 512M-Byte\r\n– Standard SPI: CLK, /CS, DI, DO, /WP,\r\n/Hold\r\n– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold\r\n– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3\r\n– Compatible SPI serial flash commands\r\n Highest Performance Serial NAND Flash\r\n– 104MHz Standard/Dual/Quad SPI clocks\r\n– 208/416MHz equivalent Dual/Quad SPI\r\n– 50MB/S sequential data transfer rate\r\n– Fast Program/Erase performance\r\n– 100,000 erase/program cycles(5) (6)\r\n– 10-year data retention\r\n Low P | Small Outline No-lead | W25N04KWZEJU |
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R7FA2E2A33CNK#AA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A33CNK#AA1 |
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R7FA2E2A33CNJ#HA1
Renesas Electronics
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1 | The RA2E2 Group is RA Family’s entry line single-chip microcontroller based on the 48-MHz Arm® Cortex®-M23 core with Renesas' innovative on-chip peripheral functions. RA2E2 Group offers ultra-low power operation and high speed serial communication with smallest package options of 20-pin and 24-pin QFN and 16-pin wafer-level CSP package, satisfying the needs of cost-sensitive and space-constrained applications. These RA2E2 Group microcontrollers enable extremely cost-effective designs for IoT sensor nodes, p | Quad Flat No-Lead | R7FA2E2A33CNJ#HA1 |
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5787395-5
TE Connectivity
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1 | Body Features: Connector Profile Standard | Shell Plating Finish Bright | Shell Plating Material Nickel over Copper | Primary Product Color Black | Assembly Process Feature Material Copper Alloy | Configuration Features: Number of Rows 2 | PCB Mount Orientation Right Angle | Number of Positions 50 | Contact Features: PCB Contact Termination Area Plating Material Tin over Nickel | Contact Mating Area Plating Material Thickness 30 MICIN | Contact Base Material Phosphor Bronze | Contact Underplating Material P | Other | 5787395-5 |
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282815-8
TE Connectivity
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1 | Body Features: Product Orientation Right Angle | Primary Product Color Green | Configuration Features: Stacking Configuration Side Stackable | Number of Rows 1 | Number of Positions 8 | Contact Features: Contact Base Material Copper Magnesium | Contact Current Rating (Max) 15 AMP | Contact Mating Area Plating Material Tin | Dimensions: Wire Size .05 – 3 MMSQ | Wire Size 30 – 12 AWG | Electrical Characteristics: Operating Voltage 300 VAC | Housing Features: Centerline (Pitch) 5.08 MM | Housing Material P | Other | 282815-8 |
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