S1G Model Download Search Results
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QS3306AS1G
Renesas Electronics
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1 | The QS3306A provides a set of two high-speed low resistance (3 ohm typical) CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise. Individual enables (OE) are used to turn on the switches. The QS3306A is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system. The QS3306A can also be used for analog switching applications such as video. The QS33 | Small Outline Packages | QS3306AS1G |
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RS1G300GN
ROHM Semiconductor
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1 | Nch 40V 80A Power MOSFET | Other | RS1G300GN |
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NXH450N65L4Q2F2S1G
onsemi
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1 | Field Stop 4 650 V IGBTs for fast switching performance combined with excellent VCEsat | Other | NXH450N65L4Q2F2S1G |
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FS1GFL-TP
MCC
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1 | Fast Recovery Rectifiers | Small Outline Diode Flat Lead | FS1GFL-TP |
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US1G-TP-B002
MCC
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1 | Super Fast Recovery Rectifiers | Diodes Moulded | US1G-TP-B002 |
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US1GHE3-TP
MCC
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1 | Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Glass Passivated Chip | Diodes Moulded | US1GHE3-TP |
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GS1GHE3-LTP-Q001
MCC
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1 | • AEC-Q101 Qualified• Halogen Free. "Green" Device (Note 1)• Glass Passivated Chip Junction• High Forward Surge Capability• Epoxy Meets UL 94 V-0 Flammability Rating• Moisture Sensitivity Level 1• Lead Free Finish/RoHS Compliant (Note 2)("P" SuffixDesignates RoHS Compliant. See Ordering Information) | Diodes Moulded | GS1GHE3-LTP-Q001 |
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ES1GHE3-LTP
MCC
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1 | Super Fast Recovery Rectifiers | Diodes Moulded | ES1GHE3-LTP |
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QS3VH257S1G
Renesas Electronics
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1 | The QS3VH257 HotSwitch Quad 2:1 multiplexer/demultiplexer is a high bandwidth bus switch with very low ON resistance, resulting in under 250ps propagation delay through the switch. The combination of near-zero propagation delay, high OFF impedance, and over-voltage tolerance makes the QS3VH257 ideal for high performance communication applications. The QS3VH257 operates from -40C to +85C. | Small Outline Packages | QS3VH257S1G |
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ES1G-LTP
MCC
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1 | Super Fast Recovery Rectifiers | Diodes Moulded | ES1G-LTP |
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US1GFA
onsemi
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1 | Low Power Loss, High Efficiency; Glass Passivated Chip Junction; Fast Switching Reverse Recovery Time: 50~75 ns Maximum; MSL 1 per J-STD-020; UL Flammability 94V-0 Classification; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free and are RoHS Compliant | Small Outline Diode Flat Lead | US1GFA |
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GS1GHE3-LTP
MCC
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1 | Dioden 400 V 1A Oberflächenmontage DO-214AC (SMA) | Diodes Moulded | GS1GHE3-LTP |
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QS3253S1G
Renesas Electronics
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1 | The QS3253 is a high-speed CMOS TTL-compatible dual 4:1 multiplexer/ demultiplexer with 3-state outputs. The QS3253 is function and pinout compatible version of the 74F253, 74FCT253, and the 74ALS/AS/ LS253 dual 4:1 multiplexers. The low ON resistance of the QS3253 allows inputs to be connected to outputs without adding propagation delay and without generating additional ground bounce noise. The QS3253 operates at -40C to +85C. | Small Outline Packages | QS3253S1G |
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GS1GDWG
PANJIT
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1 | General Purpose Rectifiers (VRRM=50-2000V) - GS1GDWG , 1A, 400V, SMA(W) | Diodes Moulded | GS1GDWG |
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RS1G180MNTB
ROHM Semiconductor
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1 | Nch 40V 57A Power MOSFET, VDSS 40V, RDS(on)(Max.) 7.0mΩ, ID ±57A, PD 30W,HSOP8. | Other | RS1G180MNTB |
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US1G
PANJIT
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1 | Ultra Fast Recovery Rectifiers (TRR=50-100ns) - US1G , 1A, 400V, SMA | Diodes Moulded | US1G |
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GS1GE-TP
MCC
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1 | Diode 400 V 1A Surface Mount DO-214AC (SMA) | Diodes Moulded | GS1GE-TP |
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QS3126S1G
Renesas Electronics
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1 | The QS3126 provides a set of four high-speed CMOS switches connecting inputs to outputs. The low ON resistance of the QS3126 allows inputs to be connected to outputs without propagation delay and without generating additional ground bounce noise. The QS3126 is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system. The QS3126 operates at -40C to +85C | Small Outline Packages | QS3126S1G |
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NRVS1GFL
onsemi
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1 | Ultra Thin Profile – Maximum Height of 1.08 mm; UL Flammability 94V-0 Classification; MSL level 1; Green Mold Compound; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free and RoHS Compliant | Small Outline Diode Flat Lead | NRVS1GFL |
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MURS1G-TP
MCC
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1 | Super Fast Recovery Rectifiers | Diodes Moulded | MURS1G-TP |
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RS1G300GNTB
ROHM Semiconductor
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1 | Nch Power MOSFET, VDSS 40V, RDS(on)(Max.) 2.5mΩ, ID ±80A, PD 35W | Other | RS1G300GNTB |
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US1GHL-TP
MCC
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1 | VRRM = 400V, VRMS = 280V, Average Rectified Forward Current @ TL=115°C 1A | Other | US1GHL-TP |
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GS1GQ-LTP
MCC
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1 | 1 AmpGeneral PurposeRectifier400 to 600 Volts | Diodes Moulded | GS1GQ-LTP |
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QS3125S1G8
Renesas Electronics
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1 | The QS3125 provides a set of four high-speed low resistance CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise. The QS3125 is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system. The QS3125 can also be used for analog switching applications such as video. The QS3125 operates at -40C to +85C. | Small Outline Packages | QS3125S1G8 |
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RS1G150MN
ROHM Semiconductor
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1 | Nch 40V 43A Power MOSFET | Other | RS1G150MN |
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![Part Image](["https://componentsearchengine.com/Images/1/QS3306AS1G.jpg",null,null])
![Part Image](["https://fscdn.rohm.com/en/products/databook/package/3d_image/discrete/HSOP8S.jpg","https://fscdn.rohm.com/en/products/databook/package/3d_image/discrete/HSOP8S.jpg",null])
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