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Other Memory ICs||OTP ROMs Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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M24LR04E-RMC6T/2 STMicroelectronics
1 M24LR04E-RMC6T/2, RFID and NFC Transceiver 13.553 → 13.567MHz, ASK, 1.8 → 5.5 V 8-Pin UFDFPN Other M24LR04E-RMC6T/2 1 Download Model
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AT28C256-15TU Microchip
1 EEPROM 256K 32K x 8 150 ns 4.5V-5.5V Small Outline Packages AT28C256-15TU 1 Download Model
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BR93L46RF-WE2 ROHM Semiconductor
1 ROHM - BR93L46RF-WE2 - SERIAL EEPROM, 1KBIT, 2MHZ, SOP-8 Small Outline Packages BR93L46RF-WE2 1 Download Model
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M95M01-DWMN3TP/K STMicroelectronics
1 EEPROM Auto 1024Kb SPI bus EEPROM Small Outline Packages M95M01-DWMN3TP/K 1 Download Model
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24AA025-I/P Microchip
1 MICROCHIP - 24AA025-I/P - EEPROM, 2KBIT, I2C, 400KHZ, DIP-8 Dual-In-Line Packages 24AA025-I/P 1 Download Model
Part Image Part Image 1 EEPROM 1K 128X8 2.5V SER EE EXT Small Outline Packages 25LC010AT-I/MS 1 Download Model
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M24C32-FMC6TG STMicroelectronics
1 STMICROELECTRONICS - M24C32-FMC6TG - EEPROM, 32KBIT, I2C, 1MHZ, UFDFPN-8 Other M24C32-FMC6TG 1 Download Model
Part Image Part Image 1 Atmel AT24C04D-XHM-B EEPROM Memory Chip, 4kbit, 1.7 → 3.6 V 8-Pin TSSOP Small Outline Packages AT24C04D-XHM-B 1 Download Model
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AT24C02D-PUM Microchip
1 EEPROM 1.7-3.6V, 1MHz, Ind Tmp, 8-PDIP Dual-In-Line Packages AT24C02D-PUM 1 Download Model
Part Image Part Image 1 The Atmel® AT27C256R is a low-power, high-performance, 262,144-bit, one-time programmable, read-only memory (OTP EPROM) organized as 32K by 8 bits. It requires only\r\none 5V power supply in normal read mode operation. Any byte can be accessed in less than\r\n45ns, eliminating the need for speed reducing WAIT states on high-performance microprocessor systems.\r\nThe Atmel scaled CMOS technology provides low active power consumption and fast programming. Power consumption is typically only 8mA in active mode and l Dual-In-Line Packages AT27C256R-45PU 1 Download Model
Part Image Part Image 1 AT27C512R-45PU, OTP EPROM Memory 512kbit 64K x 8 bit 45ns 4.5 → 5.5 V 28-Pin PDIP Dual-In-Line Packages AT27C512R-45PU 1 Download Model
Part Image Part Image 1 MICROCHIP - AT27C256R-70PU - EPROM, One Time Programmable, 70 ns, 32K x 8bit, 256 Kbit, 4.5 V to 5.5 V, DIP-28 Dual-In-Line Packages AT27C256R-70PU 1 Download Model
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DS2502R+T&R Analog Devices
1 MAXIM INTEGRATED PRODUCTS - DS2502R+T&R - EPROM, 1KBIT, SERIAL, SOT-23-3 SOT23 (3-Pin) DS2502R+T&R 1 Download Model
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AT27C080-90PU Microchip
1 AT27C080-90PU, OTP EPROM Memory 8Mbit 1M x 8 bit 90ns 4.5 → 5.5 V 32-Pin PDIP Dual-In-Line Packages AT27C080-90PU 1 Download Model
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AT27C080-90PU Microchip
1 AT27C080-90PU, OTP EPROM Memory 8Mbit 1M x 8 bit 90ns 4.5 → 5.5 V 32-Pin PDIP Dual-In-Line Packages AT27C080-90PU 1 Download Model
Part Image Part Image 1 EPROM 45NS, PLCC, IND TEMP, GREEN, T&R Plastic Leaded Chip Carrier AT27C512R-45JU-T 1 Download Model
Part Image Part Image 1 AT27C512R-70JU, EPROM Memory Chip 512kbit 64K x 8 bit 70ns 32-Pin PLCC Plastic Leaded Chip Carrier AT27C512R-70JU 1 Download Model
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AT27C010-45JU Microchip
1 AT27C010-45JU, OTP EPROM Memory 1Mbit 128K x 8 bit 45ns, 5.0V 32-Pin PLCC Plastic Leaded Chip Carrier AT27C010-45JU 1 Download Model
Part Image Part Image 1 EPROM 2Mb (256Kx8) OTP 3V 120ns Plastic Leaded Chip Carrier AT27LV020A-12JU 1 Download Model
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HS1-6664RH-Q Renesas Electronics
1 The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr Ceramic Dual-In-Line Packages HS1-6664RH-Q 1 Download Model
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HM1-6642B/883 Renesas Electronics
1 The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device High-Speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with recent generation microprocessors that use multiplexed address/data bus structures, such as the 8085. The output enable controls, both active low and active high, further simpli Ceramic Dual-In-Line Packages HM1-6642B/883 1 Download Model
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M30082040054X0PWAR Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30082040054X0PWAR 1 Download Model
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M10162040054X0ISAY Renesas Electronics
1 The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M10162040054X0ISAY 1 Download Model
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M10162040108X0PWAY Renesas Electronics
1 The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M10162040108X0PWAY 1 Download Model
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M30042040054X0PWAR Renesas Electronics
1 The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M30042040054X0PWAR 1 Download Model
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