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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	71V124SA12YG8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA12YG8	3D model available Symbol and footprint available 3	1 Download Model
	71016S15YGI8 Renesas Electronics	1	The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71016S15YGI8	3D model available Symbol and footprint available 3	1 Download Model
	71T75602S150BGG8 Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	BGA	71T75602S150BGG8	3D model available Symbol and footprint available 3	1 Download Model
	71V3576S150PFG Renesas Electronics	1	The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V3576S150PFG	3D model available Symbol and footprint available 3	1 Download Model

	7132LA55PDGI Renesas Electronics	1	The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Dual-In-Line Packages	7132LA55PDGI	3D model available Symbol and footprint available 3	1 Download Model
	70V9289L9PFGI8 Renesas Electronics	1	The 70V9289 is a high-speed 64K x 16-bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V9289L9PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S85PFGI Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67703S85PFGI	3D model available Symbol and footprint available 3	1 Download Model
	R1WV6416RSD-5SI#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1WV6416RSD-5SI#B0	3D model available Symbol and footprint available 3	1 Download Model
	71016S15PHGI8 Renesas Electronics	1	The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71016S15PHGI8	3D model available Symbol and footprint available 3	1 Download Model
	5962-8874001LA Renesas Electronics	0	The 5962-88740 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.This low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.	Ceramic Dual-In-Line Packages	5962-8874001LA	3D model not available Symbol and footprint available 2	1 Download Model
	70V659S12BFI8 Renesas Electronics	1	The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V659S12BFI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQI8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S80BQI8	3D model available Symbol and footprint available 3	1 Download Model
	6116SA90DB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	6116SA90DB	3D model available Symbol and footprint available 3	1 Download Model
	71V67903S85PFGI Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67903S85PFGI	3D model available Symbol and footprint available 3	1 Download Model
	5962-8700212ZA Renesas Electronics	0	The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with M	Ceramic Dual-In-Line Packages	5962-8700212ZA	3D model not available Symbol and footprint available 2	1 Download Model

	70V3599S133BCGI Renesas Electronics	1	The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3599S133BCGI	3D model available Symbol and footprint available 3	1 Download Model
	7038L20PFGI Renesas Electronics	1	The 7038 is a high-speed 64K x 18 Dual-Port Static RAM designed to be used as a stand-alone 1152K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or more word systems. This MASTER/SLAVE approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	7038L20PFGI	3D model available Symbol and footprint available 3	1 Download Model
	7008L25G Renesas Electronics	1	The 7008 is a high-speed 64K x 8 Dual-Port Static RAM designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Other	7008L25G	3D model available Symbol and footprint available 3	1 Download Model
	71T75602S133BGI Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	BGA	71T75602S133BGI	3D model available Symbol and footprint available 3	1 Download Model
	71V416S10PHGI8 Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V416S10PHGI8	3D model available Symbol and footprint available 3	1 Download Model
	71321LA20PFG8 Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Quad Flat Packages	71321LA20PFG8	3D model available Symbol and footprint available 3	1 Download Model
	71V124SA12TYG8 Renesas Electronics	1	The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V124SA12TYG8	3D model available Symbol and footprint available 3	1 Download Model
	R1LV0108ESA-5SR#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV0108ESA-5SR#B0	3D model available Symbol and footprint available 3	1 Download Model
	6116SA45DB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Dual-In-Line Packages	6116SA45DB	3D model available Symbol and footprint available 3	1 Download Model
	70V658S10BF Renesas Electronics	1	The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V658S10BF	3D model available Symbol and footprint available 3	1 Download Model
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