01620 Model Download Search Results
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CRCW0201620KJNED
Vishay
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1 | Thick Film Resistors - SMD 1/20watt 620Kohms 5% 200ppm | Resistor Chip | CRCW0201620KJNED |
3
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FCA-410-1620M
TE Connectivity
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1 | Industrial Relays M83536/16-020M | Other | FCA-410-1620M |
3
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5055501620
Molex
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1 | 16 Position Connector Receptacle, Center Strip Contacts Surface Mount Gold | Other | 5055501620 |
3
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CRCW0201620KFKED
Vishay
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1 | Thick Film Resistors - SMD 1/20watt 620Kohms 1% 100ppm | Resistor Chip | CRCW0201620KFKED |
3
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852-10-016-20-002101
Preci-Dip
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1 | Connector Header Through Hole, Right Angle 16 position 0.050" (1.27mm) | Other | 852-10-016-20-002101 |
2
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852-10-016-20-001101
Preci-Dip
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1 | Connector Header Through Hole, Right Angle 16 position 0.050" (1.27mm) | Other | 852-10-016-20-001101 |
3
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M39003/01-6204
Vishay
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1 | 2.2 µF Hermetically Sealed Tantalum Capacitors 50 V Axial | Other | M39003/01-6204 |
2
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M10162040108X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAY |
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M30162040108X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAY |
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691201620001
Würth Elektronik
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1 | WR-TBL Terminal block - Rising Cage - THT COB10.16/1A Serie 2016 - 10,16mm pitch - Modular THT - Grey - 45° cable entry Rising Cage Clamp 12mm height - 01p | Other | 691201620001 |
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M10162040054X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAR |
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M10162040108X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAR |
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M10162040108X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAR |
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SIT1569AI-J3-18E-0016.200000
SiTime
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1 | µPower, Ultra-Small 1 Hz – 462.5 kHz ±50 ppm Oscillator, World’s smallest oscillator footprint: 1.2 mm109 | Other | SIT1569AI-J3-18E-0016.200000 |
3
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M10162040108X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
3
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M30162040054X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
3
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M30162040054X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0IWAY |
3
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M30162040108X0PWAY
Renesas Electronics
|
1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
3
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M30162040054X0PSAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0PSAR |
3
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68016-205HLF
Amphenol Communications Solutions
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1 | BergStik®, Board to Board connector, Unshrouded Right Angle Header, Through Hole, Single Row, 5 Positions, 2.54 mm (0.100) Pitch. | Other | 68016-205HLF |
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M30162040108X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0IWAY |
3
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430162085826
Würth Elektronik
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1 | WS-TASV Tact Switch 12*12mm vertical type,SMT, height 8.5mm, white actuator, 260gf, T&R | Other | 430162085826 |
3
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AS1016204-0108X0PWAY
Avalanche Technology
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1 | MRAM Avalanche High Performance Serial P-SRAM 16Mb in WSON8 package with QSPI - 108MHz interface, 1.8V, -40 C to 105 C | Small Outline No-lead | AS1016204-0108X0PWAY |
3
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CRCW0201620RFKED
Vishay
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1 | Thick Film Resistors - SMD 1/20watt 620ohms 1% 100ppm | Resistor Chip | CRCW0201620RFKED |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image](["https://componentsearchengine.com/Images/1/CRCW0201620KJNED.jpg",null,null])
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