1N60C Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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1N60C New Jersey Semiconductor Products Inc
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon 1N60C 0 Build or Request
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1N60C Microwave Diode Corp
1 Rectifier Diode, 1 Phase, 1 Element, 0.05A, 50V V(RRM) 1N60C 0 Build or Request
Part Image Part Image 1 1A, 600V, RDS(on) = 11.5Ω(Max.) @VGS = 10 V, ID = 0.5A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 3.5pF); Low gate charge ( Typ. 4.8nC) Other FQD1N60CTM 1 Download Model
Part Image Part Image 1 N-Channel 600 V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK Transistor Outline, Vertical FQU1N60CTU 1 Download Model
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SPA11N60C3 Infineon
1 MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 Transistor Outline, Vertical SPA11N60C3 1 Download Model
Part Image Part Image 1 0.2A, 600V, RDS(on) = 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 4.8nC); Low Crss ( Typ. 3.5pF); 100% avalanche tested; RoHS compliant SOT223 (3-Pin) FQT1N60CTF-WS 1 Download Model
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R1151N60C-TR-FB Ricoh Electronic Devices Co Ltd
1 Fixed Positive LDO Regulator, 6V, CMOS, PDSO6 R1151N60C-TR-FB 0 Build or Request
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SPW11N60CFDFKSA1 Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 SPW11N60CFDFKSA1 0 Build or Request
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SPA11N60CFD Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SPA11N60CFD 0 Build or Request
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FQD1N60C onsemi
1 Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD1N60C 0 Build or Request
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FQU1N60C Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQU1N60C 0 Build or Request
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AF01N60CZ-E1 Diodes Incorporated
1 Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 AF01N60CZ-E1 0 Build or Request
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FQD1N60CTM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQD1N60CTM 0 Build or Request
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SPA11N60CFDXK Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SPA11N60CFDXK 0 Build or Request
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OM11N60CSAZ Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM11N60CSAZ 0 Build or Request
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OM11N60CSAZT Infineon Technologies AG
0 Power Field-Effect Transistor, 11A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA OM11N60CSAZT 0 Build or Request
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SPB11N60C3XT Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB SPB11N60C3XT 0 Build or Request
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OM11N60CSAZV Infineon Technologies AG
0 Power Field-Effect Transistor, 11A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA OM11N60CSAZV 0 Build or Request
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D55342K07B1N60C TT Electronics Resistors
1 Fixed Resistor, Metal Glaze/thick Film, 0.25W, 1600ohm, 100V, 10% +/-Tol, -100,100ppm/Cel, 1206, D55342K07B1N60C 0 Build or Request
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FS8821N-60CE Fortune Semiconductor Corp
1 Power Management Circuit FS8821N-60CE 0 Build or Request
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FQD1N60CTF_NL Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQD1N60CTF_NL 0 Build or Request
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SPW11N60C3FKSA1 Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD SPW11N60C3FKSA1 0 Build or Request
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SPD01N60C3BTMA1 Infineon Technologies AG
1 Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA SPD01N60C3BTMA1 0 Build or Request
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SPB11N60C3 Infineon Technologies AG
1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB SPB11N60C3 0 Build or Request
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FQN1N60CTA Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 FQN1N60CTA 0 Build or Request
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