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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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Z8F011AHJ020SC
LITTELFUSE
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1 | 8-bit Microcontrollers - MCU 1K FLASH 256B RAM | Small Outline Packages | Z8F011AHJ020SC |
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BGM220SC22HNA2
Silicon Labs
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1 | BGM220S Wireless Gecko Bluetooth | Other | BGM220SC22HNA2 |
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BGM220SC12WGA2R
Silicon Labs
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1 | Bluetooth Bluetooth v5.2 Transceiver Module 2.4GHz ~ 2.4835GHz Integrated, Chip Surface Mount | Other | BGM220SC12WGA2R |
3
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DF20SC4M-7072
Shindengen Electric Manufacturing Co., Ltd.
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1 | ・Schottky Barrier Diodes・SMD・High Recovery Speed・Low VF・Pb free terminal・RoHS:Yes | Other | DF20SC4M-7072 |
3
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NVHL040N120SC1
onsemi
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1 | Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101; Devices are Pb−Free and are RoHS Compliant | Transistor Outline, Vertical | NVHL040N120SC1 |
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SG20SC9M-5600
Shindengen Electric Manufacturing Co., Ltd.
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1 | Schottky rectifying; THT; 60V; 20A; FTO-220AG (SC91) | Other | SG20SC9M-5600 |
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NTBG040N120SC1
onsemi
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1 | Low On Resistance; Ultra Low Gate Charge; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NTBG040N120SC1 |
3
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NVHL160N120SC1
onsemi
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1 | 1200V rated; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101 | Transistor Outline, Vertical | NVHL160N120SC1 |
3
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SG20SC6M-5600
Shindengen Electric Manufacturing Co., Ltd.
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1 | Schottky Barrier Diodes・High Recovery Speed・Pb free terminal 60V, 20A | Other | SG20SC6M-5600 |
3
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UCC5320SCDR
Texas Instruments
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1 | 2A/2A, 3-kVRMS Single-Channel Isolated Gate Driver for Bipolar Supply (E) or With Split Output (S) | Small Outline Packages | UCC5320SCDR |
3
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2220SC103MAT1A
Kyocera AVX
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1 | AVX - 2220SC103MAT1A - SMD Multilayer Ceramic Capacitor, High Voltage, 10000 pF, 1.5 kV, 2220 [5650 Metric], ± 20%, X7R | Capacitor Chip Non-polarised | 2220SC103MAT1A |
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NVH4L040N120SC1
onsemi
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1 | Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A; Qualified for Automotive According to AEC−Q101; High Speed Switching and Low Capacitance; Devices are Pb−Free and are RoHS Compliant | Other | NVH4L040N120SC1 |
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S20SC65WV-5000
Shindengen Electric Manufacturing Co., Ltd.
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1 | 650V, 20A Schottky Barrier Diodes・SiCSBD・Ultra High Recovery Speed・Low Noise・Pb free terminal・RoHS:Yes | Other | S20SC65WV-5000 |
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48220SC
Murata Electronics
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1 | Power Inductors - SMD Ind 22uH, 3.1A SM Single | Other | 48220SC |
3
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NTH4L020N120SC1
onsemi
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1 | Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; 1200V Rated | Other | NTH4L020N120SC1 |
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BGM220SC22WGA2R
Silicon Labs
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1 | Bluetooth Modules (802.15.1) Wireless bluetooth SiP module, Secure Boot w/Root of Trust and Secure Loader(RTSL), 76.8MHz, 6dBm, P | Other | BGM220SC22WGA2R |
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NTBG020N120SC1
onsemi
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1 | Low On Resistance; Ultra Low Gate Charge; High Junction Temperature; High UIS, Surge Current, and Avalanche | Other | NTBG020N120SC1 |
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NTHL020N120SC1
onsemi
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1 | 1200V; Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested | Other | NTHL020N120SC1 |
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S20SC9MT-5000
Shindengen Electric Manufacturing Co., Ltd.
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1 | Diode: Schottky rectifying; THT; 90V; 20A; TO247AD; tube; Ir: 1mA | Other | S20SC9MT-5000 |
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NTHL080N120SC1A
onsemi
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1 | 1200V rated; Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested | Transistor Outline, Vertical | NTHL080N120SC1A |
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NVBG080N120SC1
onsemi
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1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L | Other | NVBG080N120SC1 |
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P0220SCMCLRP
LITTELFUSE
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1 | Thyristor Surge Protection Devices - TSPD Bi 22V 500A DO214 2L | Other | P0220SCMCLRP |
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DSL04-020SC6
STMicroelectronics
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1 | 42V Clamp 15A Ipp Tvs Diode Surface Mount SOT-23-6 | SOT23 (6-Pin) | DSL04-020SC6 |
3
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SG20SC4M-5600
Shindengen Electric Manufacturing Co., Ltd.
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1 | Schottky Barrier Diodes 40V, 20A, FTO-220G. | Other | SG20SC4M-5600 |
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NVBG160N120SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 1200V rated; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVBG160N120SC1 |
3
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![Part Image](["https://componentsearchengine.com/Images/1/Z8F011AHJ020SC.jpg",null,null])
![Part Image](["https://www.mouser.com/images/siliconlaboratories/images/BGM220S_t.jpg",null,null])
![Part Image](["https://www.mouser.com/images/siliconlaboratories/images/BGM220SC12_SPL.jpg",null,null])
![Part Image](["https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/STO-220.jpg","https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/STO-220.jpg",null])
![Part Image](["https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/FTO-220G(3PIN).jpg","https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/FTO-220G(3PIN).jpg",null])
![Part Image](["https://componentsearchengine.com/Images/9/UCC5320SCDR.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/2477_UCC5320.jpg"])
![Part Image](["https://componentsearchengine.com/Images/1/2220SC103MAT1A.jpg",null,null])
![Part Image](["https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/MTO-3PV(3PIN).jpg","https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/MTO-3PV(3PIN).jpg",null])
![Part Image](["https://search.murata.co.jp/Ceramy/image/img/P02A/180x102_4800sc.jpg","https://search.murata.co.jp/Ceramy/image/img/P02A/180x102_4800sc.jpg",null])
![Part Image](["https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/MTO-3PT(3PIN).jpg","https://www.shindengen.co.jp/products/semi/assets_mps/pdf_img_link1_2/MTO-3PT(3PIN).jpg",null])
![Part Image](["https://componentsearchengine.com/Images/9/P0220SCMCLRP.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/do214_2.jpg"])
![Part Image](["https://componentsearchengine.com/2D/0T/21265483.2.1.png",null,null])
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