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71321SA25TF
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321SA25TF |
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71256SA25TPG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA25TPG |
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71321LA25TFGI
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321LA25TFGI |
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71321LA25TF8
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321LA25TF8 |
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MAX6126A25+T
Analog Devices
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1 | Voltage References Ultra-High-Precision Ultra-Low-Noise | Small Outline Packages | MAX6126A25+T |
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XC7A25T-2CSG325C
AMD
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1 | FPGA - Field Programmable Gate Array XC7A25T-2CSG325C | BGA | XC7A25T-2CSG325C |
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XC7A25T-2CSG325I
AMD
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1 | FPGA - Field Programmable Gate Array XC7A25T-2CSG325I | BGA | XC7A25T-2CSG325I |
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F59L1G81A-25TG
ELITE
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1 | Elite Semiconductor Memory Technology Inc.Voltage Supply: 2.6V ~ 3.6V | Small Outline Packages | F59L1G81A-25TG |
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F59L1G81MA-25TIG2Y
3D SYSTEMS
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1 | 1 Gbit (128M x 8) 3.3V NAND Flash Memory | Small Outline Packages | F59L1G81MA-25TIG2Y |
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XC7A25T-2CPG238C
AMD
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1 | IC FPGA 112 I/O 238BGA | BGA | XC7A25T-2CPG238C |
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XC7A25T-1CPG238C
AMD
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1 | FPGA, ARTIX-7, 112 I/O, CSBGA-238; SVHC:No SVHC (15-Jan-2019) RoHS Compliant: Yes | BGA | XC7A25T-1CPG238C |
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1 | IC FPGA 150 I/O 238BGA | BGA | XC7A25T-L2CPG238E |
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6116LA25TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116LA25TDB |
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6116LA25TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116LA25TPG |
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7130LA25TFI
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Quad Flat Packages | 7130LA25TFI |
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6116SA25TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA25TPGI |
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71321LA25TF
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321LA25TF |
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7130LA25TFI8
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Quad Flat Packages | 7130LA25TFI8 |
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71321LA25TFI
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321LA25TFI |
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7130LA25TF
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Quad Flat Packages | 7130LA25TF |
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MAX6226ALA25+T
Analog Devices
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1 | Ultra-High-Precision, Ultra-Low-Noise, Series Voltage Reference | Other | MAX6226ALA25+T |
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71256SA25TPGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA25TPGI |
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6116SA25TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA25TDB |
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7202LA25TP
Renesas Electronics
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1 | The 7202 is a 1K x 9 dual-port FIFO memory that loads and empties data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW. It is designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. | Dual-In-Line Packages | 7202LA25TP |
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7130LA25TFGI
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Quad Flat Packages | 7130LA25TFGI |
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