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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ESD7410N2T5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | ESD7410N2T5G |
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ESD7462N2T5G
onsemi
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1 | 47V (Typ) Clamp 16A Ipp Tvs Diode Surface Mount 2-X2DFN (1x0.6) | Other | ESD7462N2T5G |
3
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ESD7424MUT5G
onsemi
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1 | IEC 61000-4-2 (ESD) Level 4 +/-30kV Contact; ISO 10605 (ESD) 330pF/330Ω +/-30kV Contact; Industry Leading Capacitance Linearity Over Voltage; Ultra-Low Capacitance < 1.0pF Max; Low Leakage < 1uA | Other | ESD7424MUT5G |
3
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ESD7421N2T5G
onsemi
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1 | Low Clamping Voltage; Low Leakage ; Low Capacitance | Other | ESD7421N2T5G |
3
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ESD7481MUT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; UltraLow Capacitance 0.25 pF; Insertion Loss: 0.030 dBm; Low Dynamic Resistance < 1Ω; IEC6100042 Level 4 ESD Protection; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low Clamping Voltage; Stand−off Voltage: 3.3 V; Low Leakage; Response Time is < 1 ns; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | ESD7481MUT5G |
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ESD7461N2T5G
onsemi
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1 | ESD Suppressors / TVS Diodes 16V ESD PROTECTION | Other | ESD7461N2T5G |
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SZESD7462MXWT5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; Ultra−Low Capacitance: 0.3 pF Typ; Insertion Loss: 0.05 dB at 1 GHz; 0.21 dB at 3 GHz; Low Leakage: < 1 nA; IEC61000−4−2 (ESD): Level 4 ±15 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); ISO 10605 (ESD) 330 pF/2 k? ±20 kV Contact; SZESD7462MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These D | Other | SZESD7462MXWT5G |
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SZESD7410MXWT5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | SZESD7410MXWT5G |
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SZESD7471N2T5G
onsemi
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1 | ON SEMICONDUCTOR - SZESD7471N2T5G - ESD Protection Device, 15 V, XDFN, 2 Pins, 300 mW, ESD7471 Series | Other | SZESD7471N2T5G |
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SZESD7462N2T5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; Ultra−Low Capacitance: 0.3 pF Typ; Insertion Loss: 0.05 dB at 1 GHz; 0.21 dB at 3 GHz; Low Leakage: < 1 nA; IEC61000−4−2 (ESD): Level 4 ±15 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); ISO 10605 (ESD) 330 pF/2 k? ±20 kV Contact; SZESD7462MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These D | Other | SZESD7462N2T5G |
3
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SZESD7481MUT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; UltraLow Capacitance 0.25 pF; Insertion Loss: 0.030 dBm; Low Dynamic Resistance < 1Ω; IEC6100042 Level 4 ESD Protection; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low Clamping Voltage; Stand−off Voltage: 3.3 V; Low Leakage; Response Time is < 1 ns; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | SZESD7481MUT5G |
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SZESD7410N2T5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | SZESD7410N2T5G |
3
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ESD7410MXWT5G
onsemi
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1 | Trans Voltage Suppressor Diode, 136W, 8V V(RWM), Bidirectional, 1 Element, Silicon | ESD7410MXWT5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ESD7471N2T5G
onsemi
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1 | Trans Voltage Suppressor Diode, 5.3V V(RWM), Bidirectional, 1 Element, Silicon | ESD7471N2T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ESD7484
onsemi
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1 | Consumer Circuit, PBGA10 | ESD7484 |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ESD7451N2T5G
onsemi
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1 | Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional, 1 Element, Silicon | ESD7451N2T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ESD7484NCTAG
onsemi
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1 | Consumer Circuit, PBGA10 | ESD7484NCTAG |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SZESD7451N2T5G
onsemi
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1 | ESD Suppressors / TVS Diodes LOW CAP ESD PROTECTION | SZESD7451N2T5G |
1
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Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SZESD7421N2T5G
onsemi
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1 | Low Clamping Voltage; Low Leakage ; Low Capacitance | SZESD7421N2T5G |
1
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Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SZESD7424MUT5G
onsemi
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1 | Trans Voltage Suppressor Diode, 24V V(RWM), Bidirectional, 1 Element, Silicon | SZESD7424MUT5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SZESD7461N2T5G
onsemi
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1 | Trans Voltage Suppressor Diode, 16V V(RWM), Bidirectional, 1 Element, Silicon | SZESD7461N2T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||