FFSH2 Model Download Search Results
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FFSH2065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH2065A |
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FFSH2065B-F085
onsemi
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1 | Max Junction Temperature 175C; Avalanche Rated 94 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified and PPAP Capable | Transistor Outline, Vertical | FFSH2065B-F085 |
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FFSH20120A-F085
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 100 mJ; Positive Temperature Coefficient; High Surge Current Capacity; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 qualified and PPAP Capable | Transistor Outline, Vertical | FFSH20120A-F085 |
3
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FFSH2065B-F155
onsemi
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1 | Avalanche Rated 94 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C; Max Junction Temperature 175C | Transistor Outline, Vertical | FFSH2065B-F155 |
3
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FFSH20120A-F155
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 200 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSH20120A-F155 |
3
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FFSH20120A
onsemi
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1 | Positive Temperature Coefficient; Avalanche Rated 200 mJ; Ease of Paralleling; Max Junction Temperature 175 °C; High Surge Current Capacity; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSH20120A |
3
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FFSH2065BDN-F085
onsemi
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1 | Max Junction Temperature 175C; Avalanche Rated 49 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Transistor Outline, Vertical | FFSH2065BDN-F085 |
3
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FFSH2065BDN
onsemi
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1 | Max Junction Temperature 175C; Avalanche Rated 49 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C | Transistor Outline, Vertical | FFSH2065BDN |
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FFSH2065ADN-F155
onsemi
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1 | Max Junction Temperature 175°C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH2065ADN-F155 |
3
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FFSH20120ADN-F085
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247 | FFSH20120ADN-F085 |
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FFSH20120ADN_F155
Fairchild Semiconductor Corporation
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247AB, | FFSH20120ADN_F155 |
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FFSH2065ADN-F085
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 650V V(RRM), Silicon Carbide, TO-247AB | FFSH2065ADN-F085 |
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FFSH20120ADN-F155
onsemi
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1 | Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D1, TO-247-3L Silicon Carbide (SiC) Schottky Diode ? EliteSiC, 20 A, 1200 V, D1, TO-247-3L, TO-247 3L, 450-TUBE | FFSH20120ADN-F155 |
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FFSH20120ADN_F155
onsemi
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1 | Silicon Carbide Schottky Diode, TO-247 3L, 3600-RAIL | FFSH20120ADN_F155 |
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