HL-02 Model Download Search Results
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AHL023-14E
NVE Corp/Sensor Products
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1 | Digital Switch Latch Open Collector Magnetoresistive 4-ULLGA (1.1x1.1) 2.4V ~ 3.6V 350nA Surface Mount -40°C ~ 125°C (TA) | Other | AHL023-14E |
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S25HL02GTDPBHB050
Infineon
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1 | 2-Gb (DDP)/4-Gb (QDP), SEMPER™ Flash with Quad SPI 1.8 V, 3.0 V | BGA | S25HL02GTDPBHB050 |
3
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IHL0215S09
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 13.5 → 16.5 V dc, I/O isolation 5.2kV dc, Vout 9V dc | Other | IHL0215S09 |
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NTHL023N065M3S
onsemi
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1 | Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant | Transistor Outline, Vertical | NTHL023N065M3S |
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S25HL02GTDPBHM050
Infineon
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1 | FLASH - NOR (SLC) Memory IC 2Gbit SPI - Quad I/O, QPI 133 MHz 6.5 ns 24-FBGA (8x8) | BGA | S25HL02GTDPBHM050 |
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IHL0212D1509
XP POWER
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1 | Isolated DC/DC Converters DC-DC, 2W, dual output, high isolation, SIP7 | Other | IHL0212D1509 |
3
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IHL0215S05
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 13.5 → 16.5 V dc, I/O isolation 5.2kV dc, Vout 5V dc | Other | IHL0215S05 |
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IHL0205D05
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 4.5 → 5.5 V dc, I/O isolation 5.2kV dc, Vout ±5V dc | Other | IHL0205D05 |
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NVHL020N090SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 900V rated; Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Transistor Outline, Vertical | NVHL020N090SC1 |
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NVHL023N065M3S
onsemi
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1 | New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses; Qualified for Automotive According to AEC−Q101; 15V to 18V Gate Drive; TO-247-3L Package; Devices are Pb−Free and are RoHS Compliant | Transistor Outline, Vertical | NVHL023N065M3S |
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IHL0212S09
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 10.8 → 13.2 V dc, I/O isolation 5.2kV dc, Vout 9V dc | Other | IHL0212S09 |
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IHL0224D09
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 21.6 → 26.4 V dc, I/O isolation 5.2kV dc, Vout ±9V dc | Other | IHL0224D09 |
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IHL0224D12
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 21.6 → 26.4 V dc, I/O isolation 5.2kV dc, Vout ±12V dc | Other | IHL0224D12 |
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IHL0205S05
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 4.5 → 5.5 V dc, I/O isolation 5.2kV dc, Vout 5V dc | Other | IHL0205S05 |
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NVHL027N65S3F
onsemi
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1 | Best in body diode; Internal Rg; Lower RDS (ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ& RDS (ON) max X EOSS; Internal Zener / 640 BS dss | Transistor Outline, Vertical | NVHL027N65S3F |
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DHL-020-R100-55
E-TEC
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1 | Pitch, 2.54mm. Contacts, 20. Rows, 2. Termination Type, Through Hole. Termination, Vertical. Gender, Male. | Other | DHL-020-R100-55 |
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IHL0215D09
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 13.5 → 16.5 V dc, I/O isolation 5.2kV dc, Vout ±9V dc | Other | IHL0215D09 |
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HL026R8BTTR
Kyocera AVX
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1 | Fixed Inductors 6.8nH | Inductors Chip | HL026R8BTTR |
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IHL0224D1509
XP POWER
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1 | XP Power Through Hole 2W Isolated DC-DC Converter, Vin 21.6 → 26.4 V dc, I/O isolation 5.2kV dc | Other | IHL0224D1509 |
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HL02220GTTR
Kyocera AVX
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1 | Fixed Inductors 22nH 2% | Other | HL02220GTTR |
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NVHL025N65S3
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss | Transistor Outline, Vertical | NVHL025N65S3 |
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NVHL020N120SC1
onsemi
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1 | Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101; Devices are Pb−Free and are RoHS Compliant; 1200V rated | Transistor Outline, Vertical | NVHL020N120SC1 |
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NTHL020N120SC1
onsemi
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1 | 1200V; Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested | Other | NTHL020N120SC1 |
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NVHL025N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Transistor Outline, Vertical | NVHL025N065SC1 |
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NTHL020N090SC1
onsemi
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1 | 900V Rating; High Junction Temperature; Ultra Low Gate Charge; 100% UIL Tested; RoHS Compliant | Transistor Outline, Vertical | NTHL020N090SC1 |
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