OD831 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FOD8316R2V onsemi	1	Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc	Small Outline Packages	FOD8316R2V	3D model available Symbol and footprint available 3	1 Download Model
	FOD8314TR2V onsemi	1	1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/μs Minimum Common Mode Rejection; Wide Supply Voltage Range: 15 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 500 ns Maximum Propagation Delay – 300 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: –	Small Outline Packages	FOD8314TR2V	3D model available Symbol and footprint available 3	1 Download Model
	FOD8318V onsemi	1	Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection;	Small Outline Packages	FOD8318V	3D model available Symbol and footprint available 3	1 Download Model
	FOD8318 onsemi	1	Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection;	Small Outline Packages	FOD8318	3D model available Symbol and footprint available 3	1 Download Model

	FOD8316 onsemi	1	Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc	Small Outline Packages	FOD8316	3D model available Symbol and footprint available 3	1 Download Model
	FOD8316V onsemi	1	Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc	Small Outline Packages	FOD8316V	3D model available Symbol and footprint available 3	1 Download Model
	FOD8314R2 onsemi	1	1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/μs Minimum Common Mode Rejection; Wide Supply Voltage Range: 15 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 500 ns Maximum Propagation Delay – 300 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: –	Small Outline Packages	FOD8314R2	3D model available Symbol and footprint available 3	1 Download Model
	FOD8314 onsemi	1	1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/μs Minimum Common Mode Rejection; Wide Supply Voltage Range: 15 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 500 ns Maximum Propagation Delay – 300 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: –	Small Outline Packages	FOD8314	3D model available Symbol and footprint available 3	1 Download Model
	OD8310 Renesas Electronics Corporation	1	Laser Diode, 1310nm		OD8310	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8317 Renesas Electronics Corporation	1	Fiber Optic Emitter		OD8317	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8311D Renesas Electronics Corporation	1	Laser Diode, 1300nm		OD8311D	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8317D Renesas Electronics Corporation	1	Fiber Optic Emitter		OD8317D	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8316B Renesas Electronics Corporation	1	Laser Diode, 1300nm		OD8316B	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8311 Renesas Electronics Corporation	1	Laser Diode, 1310nm		OD8311	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD8316D Renesas Electronics Corporation	1	Laser Diode, 1300nm		OD8316D	3D model not available Symbol and footprint not available 0	0 Build or Request

	OD-8310N Renesas Electronics Corporation	1	Laser Diode, 1310nm		OD-8310N	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD-8311N California Eastern Laboratories (CEL)	1	Laser Diode Module Emitter, 1270nm Min, 1345nm Max, 622Mbps, Surface Mount		OD-8311N	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD-8311N Renesas Electronics Corporation	1	Laser Diode, 1310nm		OD-8311N	3D model not available Symbol and footprint not available 0	0 Build or Request
	OD-8310N California Eastern Laboratories (CEL)	1	Laser Diode Module Emitter, 1270nm Min, 1345nm Max, 622Mbps, Surface Mount		OD-8310N	3D model not available Symbol and footprint not available 0	0 Build or Request
	MOD831-1-18-100 BEI Sensors	1	INCREMENTAL ROTARY ENCODER, Single, 3 Channels		MOD831-1-18-100	3D model not available Symbol and footprint not available 0	0 Build or Request
	MOD831-1-25-1024 BEI Sensors	1	INCREMENTAL ROTARY ENCODER, Single, 3 Channels		MOD831-1-25-1024	3D model not available Symbol and footprint not available 0	0 Build or Request
	MOD831-1-18-256 BEI Sensors	1	INCREMENTAL ROTARY ENCODER, Single, 3 Channels		MOD831-1-18-256	3D model not available Symbol and footprint not available 0	0 Build or Request
	FOD8316R2 onsemi	1	Half Bridge Based MOSFET Driver, 2.5A, PDSO16		FOD8316R2	3D model not available Symbol and footprint not available 0	0 Build or Request
	MOD831-0-10M-400 BEI Sensors	1	INCREMENTAL ROTARY ENCODER, Single, 3 Channels		MOD831-0-10M-400	3D model not available Symbol and footprint not available 0	0 Build or Request
	MOD831-0-38-960 BEI Sensors	1	INCREMENTAL ROTARY ENCODER, Single, 3 Channels		MOD831-0-38-960	3D model not available Symbol and footprint not available 0	0 Build or Request
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