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MR25H40CDF
Everspin Technologies
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1 | IC MRAM 4MBIT 40MHZ 8DFN | Small Outline No-lead | MR25H40CDF |
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DS2401P+
Analog Devices
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1 | Silicon Serial Number DS2401P+, Silicon Serial Number 48bit Surface Mount, 2.8 → 6 V, -40 → +85 °C, 6-Pin, TSOC | Other | DS2401P+ |
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47C16-I/SN
Microchip
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1 | SRAM 16k, 5.0V EERAM IND | Small Outline Packages | 47C16-I/SN |
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MR25H10CDF
Everspin Technologies
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1 | MRAM 1Mbit Serial-SPI Interface 3.3V 8-Pin DFN EP Tray | Small Outline No-lead | MR25H10CDF |
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EMD4E001G16G2-150CAS2
Everspin Technologies
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1 | MRAM 1Gb Non-Volatile ST-DDR4 Spin-transfer Torque MRAM | BGA | EMD4E001G16G2-150CAS2 |
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MR25H256ACDFR
Everspin Technologies
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1 | MRAM 256Kb 3.3V 32Kx8 SPI | Small Outline No-lead | MR25H256ACDFR |
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EMMC16G-W525
Kingston Technology
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1 | Embedded Multi-Media Card, BGA-153 | BGA | EMMC16G-W525 |
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MR4A08BUYS45
Everspin Technologies
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1 | MRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM | Small Outline Packages | MR4A08BUYS45 |
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M24SR02-YDW6T/2
STMicroelectronics
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1 | Dynamic NFC/RFID tag IC with 2-Kbit EEPROM, NFC Forum Type 4 Tag and I2C interface | Small Outline Packages | M24SR02-YDW6T/2 |
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47L04T-I/SN
Microchip
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1 | SRAM 4k, 3.0V EERAM IND | Small Outline Packages | 47L04T-I/SN |
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MR2A08ACYS35R
Everspin Technologies
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1 | MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM | Small Outline Packages | MR2A08ACYS35R |
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S27KS0641DPBHA020
Infineon
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1 | DRAM Nor | BGA | S27KS0641DPBHA020 |
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M30162040054X0PSAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0PSAR |
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M10082040108X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0ISAR |
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M30082040108X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040108X0ISAR |
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DS2411P+T&R
Analog Devices
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1 | MAXIM INTEGRATED PRODUCTS - DS2411P+T&R - Silicon Serial Number, 1.5V to 5.25V, TSOC-6 | Other | DS2411P+T&R |
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M10082040054X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAY |
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M30042040054X0IWAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040054X0IWAR |
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M10042040108X0PSAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040108X0PSAR |
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M30042040108X0PWAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040108X0PWAY |
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M10082040108X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040108X0PSAR |
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M30042040108X0PWAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040108X0PWAR |
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M30042040108X0IWAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040108X0IWAY |
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M30042040054X0PSAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0PSAR |
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M30082040108X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30082040108X0PWAY |
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