QPL88 Model Download Search Results
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QPL8833SQ
Qorvo
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1 | • Mid Gain: 15 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: < 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8833SQ |
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QPL8834SB
Qorvo
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1 | • Mid Gain: 12 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +42 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 4 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 290 mA (1.45W)8V, 365mA (2.92W) | Small Outline Packages | QPL8834SB |
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QPL8832SQ
Qorvo
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1 | • High Gain: 19dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +44 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8832SQ |
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QPL8833TR13
Qorvo
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1 | • Mid Gain: 15 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: < 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8833TR13 |
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QPL8832SB
Qorvo
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1 | • High Gain: 19dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +44 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8832SB |
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QPL8830SB
Qorvo
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1 | • High Gain: 21dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 2.8 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8830SB |
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QPL8832TR13
Qorvo
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1 | • High Gain: 19dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +44 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8832TR13 |
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QPL8834SR
Qorvo
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1 | • Mid Gain: 12 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +42 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 4 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 290 mA (1.45W)8V, 365mA (2.92W) | Small Outline Packages | QPL8834SR |
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QPL8831TR13
Qorvo
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1 | • High Gain: 17dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +46 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: 3.1 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8831TR13 |
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QPL8831SB
Qorvo
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1 | • High Gain: 17dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +46 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: 3.1 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8831SB |
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QPL8833SB
Qorvo
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1 | • Mid Gain: 15 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: < 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8833SB |
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QPL8833SR
Qorvo
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1 | • Mid Gain: 15 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: < 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8833SR |
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QPL8831SQ
Qorvo
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1 | • High Gain: 17dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +46 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: 3.1 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8831SQ |
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QPL8831SR
Qorvo
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1 | • High Gain: 17dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +46 dBm, 50 – 1218 MHz• OP1dB: +25 dBm, 50 – 1218 MHz• Low Noise Figure: 3.1 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8831SR |
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QPL8834SQ
Qorvo
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1 | • Mid Gain: 12 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +42 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 4 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 290 mA (1.45W)8V, 365mA (2.92W) | Small Outline Packages | QPL8834SQ |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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QPL8830SR
Qorvo
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1 | • High Gain: 21dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 2.8 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8830SR |
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QPL8830TR13
Qorvo
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1 | • High Gain: 21dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 2.8 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8830TR13 |
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QPL8834TR13
Qorvo
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1 | • Mid Gain: 12 dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +42 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 4 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 290 mA (1.45W)8V, 365mA (2.92W) | Small Outline Packages | QPL8834TR13 |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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QPL8830SQ
Qorvo
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1 | • High Gain: 21dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +45 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 2.8 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8830SQ |
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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QPL8832SR
Qorvo
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1 | • High Gain: 19dB at 1218 MHz• 5 – 1218 MHz BW• OIP3: +44 dBm, 50 – 1218 MHz• OP1dB: +24 dBm, 50 – 1218 MHz• Low Noise Figure: 3 dB, Full Band• Excellent Composite Distortion• pHEMT GaAs device technologies• Compact Size: 8-pin SOIC• Power Consumption:5 V, 280 mA (1.4 W)8V, 360mA (2.9W) | Small Outline Packages | QPL8832SR |
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