Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W957D6NBGX4I
Winbond
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1 | 128Mb HYPERRAM 500MHz WFBGA49 | BGA | W957D6NBGX4I |
3
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W9725G8KB25I
Winbond
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1 | BGA60 | BGA | W9725G8KB25I |
3
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W634GG8NB11A
Winbond
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1 | 4Gb DDR3 SDRAM 1866MHz VFBGA78 | BGA | W634GG8NB11A |
3
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W25N01GVZEAG
Winbond
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1 | 1Gb QspiNAND Flash 104MHz SON8 | Small Outline No-lead | W25N01GVZEAG |
3
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W25Q16JVXGIQ
Winbond
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1 | 16Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q16JVXGIQ |
3
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W25M512JVCSQ
Winbond
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1 | FLASH - NOR Memory IC 512Mbit SPI 104 MHz | BGA | W25M512JVCSQ |
3
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W632GU6RB11A
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU6RB11A |
3
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W25Q64JWSSIN
Winbond
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1 | 64Mb Serial NOR Flash 133MHz SOP8 | Small Outline Packages | W25Q64JWSSIN |
3
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W631GG8MB09A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09A |
3
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W25N01KWZEIE
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01GV: 1G-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Fast Program/Erase performance– 100,000 erase/program cycles(4)– 10-year data retention Efficient “ | Small Outline No-lead | W25N01KWZEIE |
3
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W29N02GZBABF
Winbond
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1 | 2Gb SLC NAND Flash MHz VFBGA63 | BGA | W29N02GZBABF |
3
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W632GU6RB12I
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6RB12I |
3
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Download Model |
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W634GU6NB12K
Winbond
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1 | 4Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W634GU6NB12K |
3
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W25Q16RVXHJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16RV: 16M-bit/ 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient “Continuous Read” and QPI Mode– Continuous Read with 8/16 | Small Outline No-lead | W25Q16RVXHJQ |
3
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W25Q01NWSFJM
Winbond
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1 | 1Gb Serial NOR Flash 133MHz SOP16 | Small Outline Packages | W25Q01NWSFJM |
3
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W9725G6KB18K
Winbond
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1 | 256Mb DDR2 SDRAM 1066MHz WBGA84 | BGA | W9725G6KB18K |
3
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Download Model |
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W631GG6MB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB11S |
3
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W957D8MFYA5A
Winbond
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1 | Interface: HyperBus• Power supply: 1.7V~2.0V or 2.7V~3.6V• Maximum clock rate: 200MHz• Double-Data Rate (DDR) Up to 400 MT/s• Clock:– Single ended clock (CK)– Differential clock (CK/CK#)• Chip Select (CS#)• 8-bit data bus (DQ[7:0])• Hardware reset (RESET#)• Read-Write Data Strobe (RWDS)– Bidirectional Data Strobe / Mask– Output at the start of all transactions to indicaterefresh latency– Output during read transactions as Read DataStrobe– Input during write transactions as Wr | BGA | W957D8MFYA5A |
3
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W632GU8RB09S
Winbond
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1 | 32M x 8 BANKS x 8 BIT DDR3L SDRAM | BGA | W632GU8RB09S |
3
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Download Model |
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W631GU6RB11I
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU6RB11I |
3
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Download Model |
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W66AP6NBHAHS
Winbond
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1 | BGA100 | BGA | W66AP6NBHAHS |
3
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Download Model |
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W9751G6KB18K
Winbond
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1 | 512Mb DDR2 SDRAM 1066MHz WBGA84 | BGA | W9751G6KB18K |
3
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Download Model |
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W634GG6NB11W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W634GG6NB11W |
3
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W631GU8RB11J
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, dif | BGA | W631GU8RB11J |
3
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W29N01HZSJNA
Winbond
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1 | 1Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N01HZSJNA |
3
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Download Model |