Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W638GU6QB-11
Winbond
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1 | ⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, differential data strobes (DQS and DQS#) are transmitted / r | BGA | W638GU6QB-11 |
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W25Q64JVZEIQ
Winbond
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1 | FLASH - NOR Memory IC 64Mbit SPI - Quad I/O 133 MHz 8-WSON (8x6) | Small Outline No-lead | W25Q64JVZEIQ |
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W25N01KVZPJU
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N01KVZPJU |
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W25Q512NWBJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q512NW: 512M-bit / 64M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient Read– Allows true XIP (execute i | BGA | W25Q512NWBJQ |
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W25Q16JVSSIQ
Winbond
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1 | 16Mb Serial NOR Flash 133MHz SOP8 | Small Outline Packages | W25Q16JVSSIQ |
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W632GU6MB12A
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6MB12A |
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W979H6KBVA2A
Winbond
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1 | Low Power DDR2 SDRAM 800MHz | BGA | W979H6KBVA2A |
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W631GU8RB09I
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, dif | BGA | W631GU8RB09I |
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W972GG6KB25K
Winbond
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1 | 2Gb DDR2 SDRAM 800MHz WBGA84 | BGA | W972GG6KB25K |
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W25Q16JVSSAQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/32 | Small Outline Packages | W25Q16JVSSAQ |
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W972GG6KB18W
Winbond
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1 | DDR2 SDRAM 1066MHz | BGA | W972GG6KB18W |
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W25Q80EWBYIQ
Winbond
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1 | • Family of SpiFlash Memories– 8M-bit/1M-byte (1,048,576)– 256-byte per programmable page– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– QPI: CLK, /CS, IO0, IO1, IO2, IO3• Highest Performance Serial Flash– 104MHz Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Up to 6X that of ordinary Serial Flash– Min 100K Program-Erase cycles per sector– More than 20-y | BGA | W25Q80EWBYIQ |
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W9816G6JH-6K
Winbond
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1 | SDRAM 166MHz TSOPII50 | Small Outline Packages | W9816G6JH-6K |
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W29N02KZSIBE
Winbond
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1 | 2Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N02KZSIBE |
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W972GG6KB18J
Winbond
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1 | DDR2 SDRAM 1066MHz | BGA | W972GG6KB18J |
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W634GU6RB11K
Winbond
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1 | 4Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W634GU6RB11K |
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W632GU8NB15W
Winbond
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1 | 2Gb DDR3 SDRAM 1333MHz VFBGA78 | BGA | W632GU8NB15W |
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W25N01GVSFKG
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01GV: 1G-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Fast Program/Erase performance– More than 100,000 erase/program cycles(4)– More than 10-year data reten | Small Outline Packages | W25N01GVSFKG |
3
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W631GG8MB12A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG8MB12A |
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W632GU6MB15S
Winbond
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1 | 2Gb DDR3 SDRAM 1333MHz VFBGA96 | BGA | W632GU6MB15S |
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W634GU8NB09K
Winbond
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1 | 4Gb DDR3 SDRAM 2133MHz VFBGA78 | BGA | W634GU8NB09K |
3
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W632GU8QB11I
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA78 | BGA | W632GU8QB11I |
3
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Download Model |
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W631GU8RB11I
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V⚫ Backward compatible to VDD, VDDQ = 1.5V ± 0.075V⚫ Double Data Rate architecture: two data transfers per clock cycle⚫ Eight internal banks for concurrent operation⚫ 8 bit prefetch architecture⚫ CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14⚫ Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)⚫ Programmable read burst ordering: interleaved or nibble sequential⚫ Bi-directional, dif | BGA | W631GU8RB11I |
3
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Download Model |
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W9725G6KB25W
Winbond
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1 | 256Mb DDR2 SDRAM 800MHz WBGA84 | BGA | W9725G6KB25W |
3
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Download Model |
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W632GU8NB12W
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W632GU8NB12W |
3
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Download Model |