Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W631GG6MB11W
Winbond
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1 | Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR) Precharged Power Down and Active Power Down Data masks (DM) for write data Programmable CAS Write Latency (CWL) per operating frequency Write Latency WL = AL + CWL Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence System level timing calibration support via write leveling and MPR read pattern ZQ Calibration for output driver and ODT using external reference r | BGA | W631GG6MB11W |
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W632GU6NB15K
Winbond
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1 | PACKAGE-BGA96 | BGA | W632GU6NB15K |
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W634GU6RB09J
Winbond
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1 | 4Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W634GU6RB09J |
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W66AP6NBHAGA
Winbond
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1 | 1Gb Low Power DDR4/4X SDRAM 3733MHz VFBGA100 | BGA | W66AP6NBHAGA |
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W25N04KWZEJR
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N04KW: 4G-bit / 512M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S sequential data transfer rate– Fast Program/Erase performance– 100,000 erase/program cycles(5) (6)– 10-year data retention Low Pow | Small Outline No-lead | W25N04KWZEJR |
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W632GU8RB09K
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU8RB09K |
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W632GG6MB15W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W632GG6MB15W |
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W25N01GVTBKG
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01GV: 1G-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S continuous data transfer rate– Fast Program/Erase performance– More than 100,000 erase/program cycles(4)– More than 10-year data ret | BGA | W25N01GVTBKG |
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W25Q12PWZEIM
Winbond
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1 | 128Mb Serial NOR Flash 166MHz SON8 | Small Outline No-lead | W25Q12PWZEIM |
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W25M512JWFSQ
Winbond
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1 | Serial NOR Flash 104MHz | Small Outline Packages | W25M512JWFSQ |
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W631GU8MB12W
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB12W |
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W634GU8QB12I
Winbond
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1 | 4Gb DDR3 SDRAM 1600MHz VFBGA78 | BGA | W634GU8QB12I |
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W29N01HZBKNF
Winbond
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1 | SLC NAND Flash MHz | BGA | W29N01HZBKNF |
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W29N01HZSANA
Winbond
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1 | 1Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N01HZSANA |
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W631GU8RB11A
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU8RB11A |
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W631GU6NB11K
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13) | BGA | W631GU6NB11K |
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W25N01JWTBKG
Winbond
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1 | New W25N Family of SpiFlash Memories– W25N01JW: 1G-bit / 128M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold,– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI Serial Flash commands Highest Performance Serial NAND Flash– 166MHz Standard/Dual/Quad SPI clocks– 332/664MHz equivalent Dual/Quad SPI– DTR (Dual Transfer Rate) up to 80MHz– 80MB/s continuous data transfer rate– Fast Program/Erase performance– Endurance T.B.D Erase/Program C | BGA | W25N01JWTBKG |
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W9825G6KB-5A
Winbond
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1 | 256Mb SDRAM 200MHz TFBGA 54 2 mA 0°C ~ 70°C | BGA | W9825G6KB-5A |
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W9725G8KB18A
Winbond
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1 | 256Mb DDR2 SDRAM 1066MHz WBGA60 | BGA | W9725G8KB18A |
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W632GG6MB15K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W632GG6MB15K |
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W631GG8MB09S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09S |
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W632GU6QB-12
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6QB-12 |
3
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W25N02JWZEAF
Winbond
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1 | 2Gb QspiNAND Flash 166MHz SON8 | Small Outline No-lead | W25N02JWZEAF |
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W25N01KVZEJR
Winbond
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1 | 1Gb QspiNAND Flash 104MHz SON8 | Small Outline No-lead | W25N01KVZEJR |
3
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Download Model |
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W632GU6RB09S
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU6RB09S |
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Download Model |