Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W631GG8MB15S
Winbond
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1 | SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GG8MB15S |
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W25Q16JWSNIQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.65V to 1.95V supply– <0.1µA Power-down (typ.)– -40°C to +85°C operating range | Small Outline Packages | W25Q16JWSNIQ |
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W631GG6NB11I
Winbond
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1 | The W631GG6NB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J | BGA | W631GG6NB11I |
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W9751G8NB18W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB18W |
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W97AH6NBVA2K
Winbond
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1 | VFBGA134 | BGA | W97AH6NBVA2K |
3
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W634GG6NB11A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W634GG6NB11A |
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W25N01JWZEJG
Winbond
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1 | 1Gb QspiNAND Flash 166MHz SON8 | Small Outline No-lead | W25N01JWZEJG |
3
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W632GG8NB12J
Winbond
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1 | DDR3 SDRAM 1600MHz | BGA | W632GG8NB12J |
3
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Download Model |
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W9825G6KB-6J
Winbond
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1 | 256Mb SDRAM 166MHz TFBGA 54 5 mA -40°C ~ 105°C | BGA | W9825G6KB-6J |
3
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Download Model |
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W25Q16JVSSSM
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/32 | Small Outline Packages | W25Q16JVSSSM |
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W9751G6KB25W
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz WBGA84 | BGA | W9751G6KB25W |
3
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W9751G8NB-3J
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3J |
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Download Model |
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W25Q16JWSNIM
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– QPI: CLK, /CS, IO0, IO1, IO2, IO3– SPI/QPI DTR(Double Transfer Rate) Read– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20 | Small Outline Packages | W25Q16JWSNIM |
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W66BQ6NBUAFK
Winbond
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1 | 2Gb Low Power DDR4/4X SDRAM 3200MHz WFBGA200 | BGA | W66BQ6NBUAFK |
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W632GG6MB09K
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GG6MB09K |
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W25N01KVZPJE
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N01KV: 1G-bit / 128M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– Fast Program/Erase performance– 100,000 erase/program cycles(3)– 10-year data retention Low Power, Wide Temperature Range– Single 2.7 to | Small Outline No-lead | W25N01KVZPJE |
3
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W25Q01NWZEIN
Winbond
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1 | Serial NOR Flash 133MHz | Small Outline No-lead | W25Q01NWZEIN |
3
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Download Model |
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W25Q32JWSSIM
Winbond
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1 | 32Mb Serial NOR Flash 133MHz SOP8 | Small Outline Packages | W25Q32JWSSIM |
3
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W634GU8NB12J
Winbond
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1 | VFBGA - 78- | BGA | W634GU8NB12J |
3
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W631GU8RB12S
Winbond
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1 | 1Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W631GU8RB12S |
3
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W632GU6NB12W
Winbond
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1 | 2Gb DDR3 SDRAM 1600MHz VFBGA96 | BGA | W632GU6NB12W |
3
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W632GG8MB15K
Winbond
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1 | DDR3 SDRAM 1333MHz Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB15K |
3
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Download Model |
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W9812G6KB-6I
Winbond
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1 | TFBGA 54 | BGA | W9812G6KB-6I |
3
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Download Model |
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W25M512JVCAM
Winbond
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1 | Serial NOR Flash 104MHz | BGA | W25M512JVCAM |
3
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Download Model |
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W634GU6NB15J
Winbond
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1 | DDR3 SDRAM 1333MHz | BGA | W634GU6NB15J |
3
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Download Model |