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IRF5803TRPBF
Infineon
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1 | MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC | SOT23 (6-Pin) | IRF5803TRPBF |
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IDT71V65803S133PFI
Renesas Electronics
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1 | SRAM,IDT71V65803S 512kx18 133MHz | Quad Flat Packages | IDT71V65803S133PFI |
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GMR7580-37S1BNU-513
Glenair
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1 | D-Sub Socket Micro-D Connectors 37S,1.91mm Pitch | Other | GMR7580-37S1BNU-513 |
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0373-0-15-80-34-14-10-0
Mill-Max
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1 | Pin Receptacle Connector 0.032" ~ 0.046" (0.81mm ~ 1.17mm) No Tail Solder , -55°C ~ 125°C | Other | 0373-0-15-80-34-14-10-0 |
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B58031U5105M062
TDK
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1 | EPCOS - B58031U5105M062 - CAP, MLCC, AEC-Q200, 1UF, 500V, SMD | Other | B58031U5105M062 |
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M22-2580305
Harwin
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1 | M22: 3+3 Pos Plug DIL Straight 2.3mm THT Connector 5mm pin Gold | Other | M22-2580305 |
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71V65803S133BQG
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S133BQG |
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71V65803S133BQI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S133BQI |
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B58033I5206M001
TDK
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1 | Specialty Ceramic Capacitors Ceralink SolderPin (SP) 20uF 500volts | Other | B58033I5206M001 |
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74435580330
Würth Elektronik
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1 | WE-HCI SMT Flat Wire High Current Inductor Size 2212; L = 3.3 µH ±20%; IR = 29.0 A; Isat = 45.0 A; RDC = 1.70 mΩ | Inductor Moulded | 74435580330 |
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71V65803S150BQG8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S150BQG8 |
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71V65803S100PFG8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V65803S100PFG8 |
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SS5-80-3.00-L-D-K-TR
SAMTEC
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1 | 0.50 mm Micro Blade & Beam Low-Profile Socket | Other | SS5-80-3.00-L-D-K-TR |
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MS580314BA01-00
TE Connectivity
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1 | Dimensions: Dimensions 6.2 x 6.4 MM | Dimensions .24 x .25 INCH | Electrical Characteristics: Board Level Pressure Sensor Supply Voltage 1.8 – 3.6 V | Operation/Application: Resolution .04 | Pressure 14000 MBAR | Output/Span 24 bit ADC | Board Level Pressure Sensor Accuracy -200 to +100mbar | Other: Sensor Options No Option | Packaging Features: Board Level Pressure Sensor Package Surface Mountable | Product Type Features: Board Level Pressure Sensor Style Absolute | Board Level Pressure Sensor Type Digit | Other | MS580314BA01-00 |
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MS580302BA01-00
TE Connectivity
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1 | Dimensions: Dimensions 6.2 x 6.4 MM | Dimensions .24 x .25 INCH | Electrical Characteristics: Board Level Pressure Sensor Supply Voltage 1.8 – 3.6 V | Operation/Application: Resolution .024 | Pressure 2000 MBAR | Board Level Pressure Sensor Accuracy ±2.5mbar | Output/Span 24 bit ADC | Other: Sensor Options No Option | Packaging Features: Board Level Pressure Sensor Package Surface Mountable | Product Type Features: Board Level Pressure Sensor Type Digital Pressure and Altimeter Sensor Modules | Board Lev | Other | MS580302BA01-00 |
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FTE-158-03-G-DV-ES-A
SAMTEC
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1 | 116 Position, 0.80 mm Surface Mount Micro Terminal Strip, Vertical Mount | Other | FTE-158-03-G-DV-ES-A |
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71V65803S150PFGI
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V65803S150PFGI |
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B58035U7155M052
TDK
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1 | 1.5 µF ±20% 700V Ceramic Capacitor - Stacked SMD, 6 J-Lead | Other | B58035U7155M052 |
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JM38510/65803BEA
Texas Instruments
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1 | Decoder/Demultiplexer 1 x 2:4 16-CDIP | Ceramic Dual-In-Line Packages | JM38510/65803BEA |
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8S58035AKILF
Renesas Electronics
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1 | The 8S58035I is a high speed 2-to-6 Differential-to-LVPECL Fanout Buffer. The 8S58035I is optimized for high speed and very low output skew, making it suitable for use in demanding applications such as SONET, 1 Gigabit and 10 Gigabit Ethernet, and Fiber Channel. The internally terminated differential inputs and VREF_AC pins allow other differential signal families such as LVDS, LVDS and CML to be easily interfaced to the input with minimal use of external components. The device also has a 2:1 MUX input, al | Quad Flat No-Lead | 8S58035AKILF |
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B58035U9504M062
TDK
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1 | Specialty Ceramic Capacitors 900V 0.5uF Ceralink Flex Assembly 2 | Other | B58035U9504M062 |
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0312-0-15-80-34-80-10-0
Mill-Max
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1 | Pin Receptacle Connector 0.032" ~ 0.046" (0.81mm ~ 1.17mm) No Tail Solder | Other | 0312-0-15-80-34-80-10-0 |
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71V65803S133BGG8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S133BGG8 |
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71V65803S100BGGI8
Renesas Electronics
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1 | The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V65803S100BGGI8 |
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B58031U5105M002
TDK
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1 | 1 ??F, 500 V/002 | Other | B58031U5105M002 |
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