NVMYS Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Small foot print - 5mm x 6mm; Low Rdson; Low Qg; AEC-Q101 Qualified NVMYS016N10MCLTWG 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 102A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS3D5N04CTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 51A I(D), 60V, 0.01314ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS9D3N06CLTAG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 83A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS007N10MCLTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 85A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS3D8N04CLTAG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 59A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS008N08LHTWG 0 Build or Request
Part Image Part Image 1 Small Footprint (5x6mm); Low RDS (ON); Low QG) and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant NVMYS010N04CLTWG 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 132A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS2D1N04CLTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 42A I(D), 80V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS013N08LHTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 66A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS7D0N06CTWG 0 Build or Request
Part Image Part Image 1 Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant NVMYS4D6N06CTWG 1 Download Model
Part Image Part Image 1 Low RDS(on); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant; Small Footprint (5x6 mm) NVMYS6D2N06CLTWG 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 171A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS2D3N06CTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 190A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS1D7N04CTWG 0 Build or Request
Part Image Part Image 1 Small Footprint (5x6mm); Low RDS(on) ; Low QG and Capacitance; LFPAK4 Package; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant NVMYS4D1N06CLTWG 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 185A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS1D6N04CLT1G 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 22A I(D), 80V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS029N08LHTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 78A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS4D5N04CTAG 0 Build or Request
Part Image Part Image 1 Low QG and Capacitance; Low RDS(on); AEC-Q101 Qualified and PPAP Capable; RoHS Compliant NVMYS4D5N04CTWG 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 109A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS005N10MCLT1G 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 33A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS016N06CTWG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 185A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NVMYS1D6N04CLTWG 0 Build or Request
Part Image Part Image 1 Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant NVMYS1D2N04CLTWG 1 Download Model
Part Image Part Image 1 MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A NVMYS006N08LHTWG 1 Download Model
Part Image Part Image 1 Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Channel NVMYS3D8N04CLTWG 1 Download Model
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