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A6387DTR
STMicroelectronics
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1 | Gate Drivers High-voltage high and low side driver for automotive applications | Small Outline Packages | A6387DTR |
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ISL6615AIBZ
Renesas Electronics
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1 | The ISL6615A is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615A drives both upper and lower gates over a range of 4. 5V to 13. 2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and | Small Outline Packages | ISL6615AIBZ |
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MAX5075AAUA+T
Analog Devices
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1 | Gate Drivers Push-Pull FET Driver with Integrated Oscillator and Clock Output | Small Outline Packages | MAX5075AAUA+T |
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NCP81075MNTXG
onsemi
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1 | Drives two N-Channel MOSFETs in High & Low Side; Integrated Bootstrap Diode for High Side Gate Drive; Bootstrap Supply Voltage Range up to 180V; 4A Source, 4A Sink Output Current Capability; Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns; Wide Supply Voltage Range 8.5V to 20V; Fast Propagation Delay Times (Typ. 20 ns); 2 ns Delay Matching (Typical); Under-Voltage Lockout (UVLO) Protection for Drive Voltage; Operating Junction Temperature Range of -40°C to 140°C | Small Outline No-lead | NCP81075MNTXG |
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ISL71040M30RTZ-T
Renesas Electronics
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1 | Radiation Tolerant Low-Side GaN FET Driver, 4.5V to 13.2V, -55°C to +125°C | Small Outline No-lead | ISL71040M30RTZ-T |
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BM63574S-VC
ROHM Semiconductor
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1 | 600V IGBT Intelligent Power Module (IPM) | Other | BM63574S-VC |
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IR2136SPBF
Infineon
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1 | 3-PHASE BRIDGE DRIVER | Small Outline Packages | IR2136SPBF |
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STDRIVE102P
STMicroelectronics
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1 | Triple half-bridge gate driver with programmable currents and SPI configuration | Quad Flat No-Lead | STDRIVE102P |
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IX4428N
LITTELFUSE
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1 | Driver 1.5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC Tube | Other | IX4428N |
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NCV33152DR2G
onsemi
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1 | Output Rise and Fall Times of 15 ns with 1000 pF Load; CMOS/LSTTL Compatible Inputs with Hysteresis; Low Standby Current; Two Independent Channels with 1.5 A Totem Pole Outputs; Undervoltage Lockout with Hysteresis; Efficient High Frequency Operation; Enhanced System Performance with Common Switching Regulator Control ICs; Pb-Free Packages are Available | Small Outline Packages | NCV33152DR2G |
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STGAP2HSCMTR
STMicroelectronics
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1 | Gate Drivers Galvanically isolated 4 A single gate driver | Small Outline Packages | STGAP2HSCMTR |
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IR2110SPBF
Infineon
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1 | Infineon IR2110SPBF Dual High and Low Side MOSFET Power Driver, 2.5A, 10 → 20 V 16-Pin, SOIC W | Small Outline Packages | IR2110SPBF |
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TB9103FTG
Toshiba
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1 | CDMOS Linear Integrated Circuit Silicon, Automotive 1-channel H-bridge(2-channel half-bridge) gate driver, 7-18 V | Other | TB9103FTG |
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ISL73040SEHVL
Renesas Electronics
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1 | The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents th | Other | ISL73040SEHVL |
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HIP2211FBZ
Renesas Electronics
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1 | The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay | Small Outline Packages | HIP2211FBZ |
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MC33152DR2G
onsemi
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1 | Output Rise and Fall Times of 15 ns with 1000 pF Load; CMOS/LSTTL Compatible Inputs with Hysteresis; Low Standby Current; Two Independent Channels with 1.5 A Totem Pole Outputs; Undervoltage Lockout with Hysteresis; Efficient High Frequency Operation; Enhanced System Performance with Common Switching Regulator Control ICs; Pb-Free Packages are Available | Small Outline Packages | MC33152DR2G |
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HIP4086APZ
Renesas Electronics
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1 | The HIP4086 and HIP4086A (referred to as the HIP4086/A) are 3-phase N-channel MOSFET drivers. Both parts are specifically targeted for PWM motor control. These drivers have flexible input protocol for driving every possible switch combination. The user can even override the shoot-through protection for switched reluctance applications. The HIP4086/A have a wide range of programmable dead times (0. 5μs to 4. 5μs) which makes them very suitable for the low frequencies (up to 100kHz) typically used for motor d | Dual-In-Line Packages | HIP4086APZ |
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ADUM3221BRZ-RL7
Analog Devices
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1 | Isolated 4 A Dual-Channel Gate Driver | Small Outline Packages | ADUM3221BRZ-RL7 |
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LF2304NTR
LITTELFUSE
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1 | Half-Bridge Gate Driver IC Inverting 8-SOIC | Small Outline Packages | LF2304NTR |
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IRS44262STRPBF
Infineon
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1 | Gate Drivers 25V dual low-side ,3.3A,50ns,DSO-8 | Small Outline Packages | IRS44262STRPBF |
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NCV51752CBDR2G
onsemi
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1 | 4.5-A Peak Source, 9-A Peak Sink Output Current; Integrated Negative Bias Control -2/-3/-4/-5-V; 36 ns Propagation Delay with 5 ns Max Delay Matching; 3-V to 20-V Input Supply Voltage; 200V/ns dV/dt Immunity; 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements); UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC | Small Outline Packages | NCV51752CBDR2G |
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2EDN8533FXTMA1
Infineon
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1 | DRIVER IC PG-DSO-8 | Small Outline Packages | 2EDN8533FXTMA1 |
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1EDN8550BXTSA1
Infineon
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1 | INFINEON - 1EDN8550BXTSA1 - MOSFET Driver, High Side, 4.5V to 20V Supply, 8A Out, 45ns Delay, SOT-23-6 | SOT23 (6-Pin) | 1EDN8550BXTSA1 |
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NCV51561DADWR2G
onsemi
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1 | 4.5-A Peak Source, 9-A Peak Sink Output Current Capability; Output Supply Voltage from 6.5 V to 30 V with 5-V, 8-V, and 17-V UVLO threshold.; Propagation Delay Typical 36 ns with 8 ns Max Delay Matching per channel; User Programmable Input Logic for Single or Dual-input modes via ANB; Common Mode Transient Immunity CMTI > 200V/ns; 5 kVrms Galvanic Isolation from input to each output & 1500 V peak differential voltage between output channels; AEC Qualified | Small Outline Packages | NCV51561DADWR2G |
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L99H02QF
STMicroelectronics
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1 | H-bridge gate driver for automotive applications | Quad Flat Packages | L99H02QF |
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