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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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PJQ1901
PANJIT
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1 | Small Signal MOSFET (Rds(on)>1Ω) - PJQ1901 , P Channel, Single, -0.75A, -20V, DFN1006-3L | Other | PJQ1901 |
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PJA3453
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJA3453 , P Channel, Single, -3.4A, -20V, SOT-23 | SOT23 (3-Pin) | PJA3453 |
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PJD45P03E-AU
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJD45P03E-AU, AEC-Q101, P Polarity, Single, -42A, -30V, TO-252AA | Other | PJD45P03E-AU |
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PJQ4439EP
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJQ4439EP, P Polarity, Single, -30A, -30V, DFN3333-8L | Other | PJQ4439EP |
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PJC7409
PANJIT
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1 | Small Signal MOSFET (Rds(on)>1Ω) - PJC7409, P Channel, Single, -0.5A, -20V, SOT-323 | Other | PJC7409 |
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PJA3409
PANJIT
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1 | Low Voltage MOSFET (20-40V,Rds(on)<1Ω) - PJA3409 , P Channel, Single, -2.9A, -30V, SOT-23 | SOT23 (3-Pin) | PJA3409 |
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PJS6461-AU
PANJIT
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1 | Medium Voltage MOSFET (60-200V,Rds(on)<1Ω) - PJS6461-AU , AEC-Q101, P Polarity, Single, -3.2A, -60V, SOT-23 6L | SOT23 (6-Pin) | PJS6461-AU |
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DMPH6050SSD-13
Diodes Incorporated
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1 | Dual MOSFET, P Channel, 60 V, 60 V, 5.2 A, 5.2 A, 0.034 ohm | Small Outline Packages | DMPH6050SSD-13 |
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MAX811REUS+T
Analog Devices
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1 | Supervisory Circuits 4-Pin A P Voltage Monitors with Manual Reset Input | Other | MAX811REUS+T |
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IRF9530SPBF
Vishay
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1 | VISHAY - IRF9530SPBF - Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount | Other | IRF9530SPBF |
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SI4435DDY-T1-E3
Vishay
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1 | VISHAY - SI4435DDY-T1-E3 - Power MOSFET, P Channel, 30 V, 11.4 A, 0.0195 ohm, SOIC, Surface Mount | Small Outline Packages | SI4435DDY-T1-E3 |
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TLJP336M010R3500
Kyocera AVX
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1 | Cap Tant Solid 33uF 10V P CASE 20% (2.05 X 1.35 X 1.5mm) SMD 2012-15 3.5 Ohm 125C T/R | Capacitor Moulded Polarised | TLJP336M010R3500 |
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SP8M8FRATB
ROHM Semiconductor
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1 | ROHM - SP8M8FRATB - Dual MOSFET, N and P Channel, 6 A, 30 V, 0.021 ohm, 10 V, 2.5 V | Small Outline Packages | SP8M8FRATB |
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IRF5305SPBF
Infineon
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1 | INFINEON - IRF5305SPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount | Other | IRF5305SPBF |
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IRF9530SPBF
Vishay
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1 | VISHAY - IRF9530SPBF - Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount | Other | IRF9530SPBF |
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BSZ120P03NS3GATMA1
Infineon
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1 | INFINEON - BSZ120P03NS3GATMA1 - Power MOSFET, P Channel, 30 V, 40 A, 0.009 ohm, PG-TSDSON, Surface Mount | Other | BSZ120P03NS3GATMA1 |
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RU1C001ZPTL
ROHM Semiconductor
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1 | ROHM - RU1C001ZPTL - MOSFET Transistor, P Channel, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V | SO Transistor Flat Lead | RU1C001ZPTL |
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SI4401FDY-T1-GE3
Vishay
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1 | VISHAY - SI4401FDY-T1-GE3 - Power MOSFET, P Channel, 40 V, 14 A, 0.0118 ohm, SOIC, Surface Mount | Small Outline Packages | SI4401FDY-T1-GE3 |
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IRF9630STRLPBF
Vishay
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1 | VISHAY - IRF9630STRLPBF.. - Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-263 (D2PAK), Surface Mount | Other | IRF9630STRLPBF |
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PMDPB80XP,115
Nexperia
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1 | Dual MOSFET, Dual P Channel, -3.7 A, -20 V, 0.08 ohm, -4.5 V, -600 mV RoHS Compliant: Yes | Other | PMDPB80XP,115 |
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CSD25484F4
Texas Instruments
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1 | MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Other | CSD25484F4 |
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LRMAP2512-R0011FT4
TT Electronics
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1 | CURRENT SENSE RES, 0R0011, 3W, 2512; Resistance:0.0011ohm; Product Range:LRMA P Series; Resistor Case Style:2512 [6432 Metric]; Power Rating:3W; Resistance Tolerance:± 1%; Resistor Element Type:Metal Alloy RoHS Compliant: Yes | Resistor Chip | LRMAP2512-R0011FT4 |
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TPS26624DRCR
Texas Instruments
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1 | Hot Swap Voltage Controllers 4.5-V to 60-V, 478mΩ, 0.025-0.88A eFuse with integrated input and output reverse polarity p 10-VSON -40 to 125 | Other | TPS26624DRCR |
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PUS-2405-2W
Danube
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1 | DC-DC Converter ECHNOLOGY z LOW COST z NO HEATSINK REQUIRED z UP TO 2W UNRE GULATED OUTPUT POWER z SINGLE IN LINE P ACKAGE z 100% BURNED IN z MTBF > 1,800, 000 HOURS z OUTPUT SPECIFICATIONS z I NPUT SPECIFICATIONS Voltage Setpoint | Other | PUS-2405-2W |
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1888247-1
TE Connectivity
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1 | Configuration Features: Number of Positions 20 | Contact Features: Contact Mating Area Plating Material Thickness .76 MICM | Contact Mating Area Plating Material Gold | Contact Mating Area Plating Material Thickness 29.92 MICIN | Contact Current Rating (Max) .5 AMP | Electrical Characteristics: Data Rate (Max) 16 GBS | Housing Features: Centerline (Pitch) .8 MM | Centerline (Pitch) .031 INCH | Industry Standards: UL Flammability Rating UL 94V-0 | Operation/Application: Circuit Application Power & Signal | P | Other | 1888247-1 |
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