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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FMB3946 onsemi
1 ON Semi FMB3946 Dual NPN + PNP Transistor, 200 mA, 40 V, 6-Pin SOT-23 SOT23 (6-Pin) FMB3946 1 Download Model
Part Image Part Image 1 Miniature SOT-23 Surface Mount Package Saves Board Space; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT23 (3-Pin) NSVMMBTH10LT1G 1 Download Model
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HFA3102BZ Renesas Electronics
1 The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA. Small Outline Packages HFA3102BZ 1 Download Model
Part Image Part Image 1 Low-noise use : NF = 1.2 dB typ. (f = 1 GHz); High cut-off frequency : fT = 10 GHz typ. (VCE = 5 V); High gain : |S21e|2 = 17 dB typ. (f = 1 GHz); MCPH4 package is pin-compatible with SC-82FL; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance SO Transistor Flat Lead NSVF4017SG4T1G 1 Download Model
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MMBTH10 onsemi
1 Obsolete - NPN Bipolar Transistor SOT23 (3-Pin) MMBTH10 1 Download Model
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BFS20,235 Nexperia
1 BFS20 - NPN medium frequency transistor SOT23 (3-Pin) BFS20,235 1 Download Model
Part Image Part Image 1 SOT-23 Surface Mount Package Saves Board Space; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT23 (3-Pin) MMBT918LT1G 1 Download Model
Part Image Part Image 1 High cutoff frequency : fT=1.5GHz typ; High gain : Forward Transfer Gain=13dB typ (f=0.4GHz) SOT23 (3-Pin) 15GN03CA-TB-E 1 Download Model
Part Image Part Image 1 Low-noise use : NF=1.2dB typ (f=1GHz); High cut-off frequency : fT=16GHz typ (VCE=5V); High gain : Forward Transfer Gain =17.5dB typ (f=1GHz); Halogen free compliance SO Transistor Flat Lead MCH4020-TL-H 1 Download Model
Part Image Part Image 1 Last Shipments - 80 V Dual Common Anode Switching Diode SO Transistor Flat Lead NSVF5490SKT3G 1 Download Model
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MMBTH10-7-F Diodes Incorporated
1 RF Transistor NPN 25V 50mA 650MHz 300mW Surface Mount SOT-23-3 SOT23 (3-Pin) MMBTH10-7-F 1 Download Model
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NTE107 NTE ELECTRONICS
1 Transistor: NPN; bipolar; 12V; 25mA; 0.2W; TO92 Other NTE107 1 Download Model
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2SC4308 Renesas Electronics
1 Silicon NPN Transistor Other 2SC4308 1 Download Model
Part Image Part Image 1 Infineon BFP520H6327XTSA1 NPN Transistor, 40 mA, 2.5 V, 4-Pin SOT-343 Other BFP520H6327XTSA1 1 Download Model
Part Image Part Image 1 LOW NOISE, HIGH GAIN SiGe HBT Other SGA8343Z 1 Download Model
Part Image Part Image 1 RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP Other BFU610F,115 1 Download Model
Part Image Part Image 1 RF Bipolar Transistors NPN wideband silicon RF transistor Other BFU590QX 1 Download Model
Part Image Part Image 1 RF Bipolar Transistors Single NPN 21GHz Other BFU660F,115 1 Download Model
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BFP460 Infineon
1 NPN Silicon RF Transistor Other BFP460 1 Download Model
Part Image Part Image 1 RF Transistor 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH Other MCH6001-TL-E 1 Download Model
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HFA3134IHZ96 Renesas Electronics
1 The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. SOT23 (6-Pin) HFA3134IHZ96 1 Download Model
Part Image Part Image 1 Low-noise : NF=1.0dB typ (f=1GHz); High gain (Forward Transfer Gain: 12dB typ at f=1.0GHz); High cut-off frequency : fT=7GHz typ SOT23 (3-Pin) 2SC5226A-5-TL-E 1 Download Model
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HFA3096BZ96 Renesas Electronics
1 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while Small Outline Packages HFA3096BZ96 1 Download Model
Part Image Part Image 1 High current rating; Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]; Small ON-resistance (Ron) SO Transistor Flat Lead 50A02MH-TL-E 1 Download Model
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HFA3127RZ96 Renesas Electronics
1 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while Quad Flat No-Lead HFA3127RZ96 1 Download Model
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