RF Small Signal Field-Effect Transistors Model Download Search Results
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BFS20,235
Nexperia
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1 | BFS20 - NPN medium frequency transistor | SOT23 (3-Pin) | BFS20,235 |
3
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NE85633-T1B-A
Renesas Electronics
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1 | NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold | SOT23 (3-Pin) | NE85633-T1B-A |
3
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2SC2053
Mitsubishi
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1 | NPN Epitaxial Planar Type, TO-92 | Other | 2SC2053 |
2
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2SC4725TLP
ROHM Semiconductor
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1 | Bipolar Transistors - BJT NPN 20V 50MA | Other | 2SC4725TLP |
2
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BFT92W
NXP
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1 | NXP BFT92W PNP RF Bipolar Transistor, 25 mA, 15 V, 3-Pin SOT-323 | SOT23 (3-Pin) | BFT92W |
3
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BFU580Q
NXP
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1 | NXP Semiconductors BFU580Q/MPT3///REEL 7 Q1/T1 *STANDARD MARK SMD | Other | BFU580Q |
3
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BFU730F,115
NXP
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1 | Trans GP BJT NPN 2.8V 0.03A 4-Pin(3+Tab) DFP T/R | Other | BFU730F,115 |
3
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2SC1215
Panasonic
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1 | Silicon NPN epitaxial planer type | Other | 2SC1215 |
3
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BFU630F,115
NXP
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1 | RF Bipolar Transistors Single NPN 21GHz | Other | BFU630F,115 |
2
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BFU710F
NXP
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1 | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | Other | BFU710F |
2
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2SC4083T106N
ROHM Semiconductor
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1 | Bipolar Transistors - BJT NPN 11V 50MA SOT-323 | SO Transistor Flat Lead | 2SC4083T106N |
3
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50A02MH-TL-E
onsemi
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1 | High current rating; Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]; Small ON-resistance (Ron) | SO Transistor Flat Lead | 50A02MH-TL-E |
3
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HFA3127RZ96
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Quad Flat No-Lead | HFA3127RZ96 |
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2SC5226A-5-TL-E
onsemi
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1 | Low-noise : NF=1.0dB typ (f=1GHz); High gain (Forward Transfer Gain: 12dB typ at f=1.0GHz); High cut-off frequency : fT=7GHz typ | SOT23 (3-Pin) | 2SC5226A-5-TL-E |
3
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HFA3134IHZ96
Renesas Electronics
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1 | The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. | SOT23 (6-Pin) | HFA3134IHZ96 |
3
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NSVF4020SG4T1G
onsemi
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1 | Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz]; High cut-off frequency : fT = 16 GHz (typ) [VCE = 5 V]; High gain : |S21e|2 = 17.5 dB (typ) [f = 1 GHz]; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance; MCPH4 package is pin-compatible with SC-82FL | SO Transistor Flat Lead | NSVF4020SG4T1G |
3
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MCH6001-TL-E
onsemi
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1 | RF Transistor 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH | Other | MCH6001-TL-E |
3
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HFA3096BZ96
Renesas Electronics
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1 | The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while | Small Outline Packages | HFA3096BZ96 |
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BFP196E6327
Infineon
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1 | Infineon BFP196E6327 NPN RF Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-143 | Other | BFP196E6327 |
3
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2SC4228-T1-A
Renesas Electronics
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1 | Renesas Electronics 2SC4228-T1-A NPN RF Bipolar Transistor, 35 mA, 10 V, 3-Pin SOT-323 | SOT23 (3-Pin) | 2SC4228-T1-A |
2
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BFG425W
NXP
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1 | Bipolar Junction Transistor, NPN Type, SOT-343R | Other | BFG425W |
3
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BFQ19S
Infineon
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1 | Infineon BFQ19S NPN RF Bipolar Transistor, 0.075 A, 15 V, 4-Pin SOT-89 | Other | BFQ19S |
3
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BFT25A,215
NXP
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1 | PNP transistor in a plastic SOT23 | SOT23 (3-Pin) | BFT25A,215 |
3
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2N918
Central Semiconductor
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1 | Bipolar Transistors - BJT NPN VHF Osc | Other | 2N918 |
2
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BFU730F
NXP
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1 | RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP | Other | BFU730F |
3
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