RF Small Signal Field-Effect Transistors Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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CA3083MZ96 Renesas Electronics
1 Bipolar Transistors - BJT W/ANNEAL TXARRAY 5X NPN 2-MATCHED 16N Small Outline Packages CA3083MZ96 1 Download Model
Part Image Part Image 1 Surface mount robust silicon NPN RF bipolar transistor 80mA ,250mW,-55+150 °C Other BFP540ESDE6327HTSA1 1 Download Model
Part Image Part Image 1 RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface Mount 4-SO Other BFG10W/X 1 Download Model
Part Image Part Image 1 RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-SOT343-4-2 Other BFP740H6327XTSA1 1 Download Model
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DSC9G02C0L Panasonic
1 DSC9G02C0L, Bipolar Transistor, NPN 15 mA 20 V HFE:65 650 MHz HF Amplifier, 3-Pin SSMini3 F3 B SO Transistor Flat Lead DSC9G02C0L 1 Download Model
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BFR99 STMicroelectronics
1 PNP Transistor ABSOLUTE MAXIMUM RATINGS Other BFR99 1 Download Model
Part Image Part Image 1 RF Bipolar Transistors NPN Silicon RF TRANSISTOR Other BFP196E6327HTSA1 1 Download Model
Part Image Part Image 1 NXP - BFU550AR - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-23 Other BFU550AR 1 Download Model
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BFP420H6433 Infineon
1 RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343 - Bulk Other BFP420H6433 1 Download Model
Part Image Part Image 1 RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SC-73 Other BFU590GX 1 Download Model
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2SC4713KT146R ROHM Semiconductor
1 Bipolar Transistors - BJT TRANS GP BJT NPN 6V 0.05A 3PIN SOT23 (3-Pin) 2SC4713KT146R 1 Download Model
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BFP183 Infineon
1 BFP183 - LOW-NOISE SI TRANSISTOR Other BFP183 1 Download Model
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2N5031 Microchip
1 RF Transistor NPN 10V 20mA 400MHz 200mW Through Hole TO-72 Other 2N5031 1 Download Model
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2N3866A Central Semiconductor
1 Bipolar Transistors - BJT PNP 55Vcbo 30Vceo 3.5Vebo 0.4A 5.0W Other 2N3866A 1 Download Model
Part Image Part Image 1 RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP 90 @ 10mA, 2V Other BFU660F 1 Download Model
Part Image Part Image 1 NXP BFG35,115 NPN RF Bipolar Transistor, 0.15 A, 18 V, 4-Pin SC-73 SOT223 (3-Pin) BFG35,115 1 Download Model
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BFP720 Infineon
1 SiGe:C Heterojunction Wideband RF Bipolar Transistor Other BFP720 1 Download Model
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BF199 onsemi
1 NPN RF Transistor Other BF199 1 Download Model
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KST10MTF onsemi
1 VHF / UHF Transistor SOT23 (3-Pin) KST10MTF 1 Download Model
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HFA3135IHZ96 Renesas Electronics
1 The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. SOT23 (6-Pin) HFA3135IHZ96 1 Download Model
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HFA3046BZ Renesas Electronics
1 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while Small Outline Packages HFA3046BZ 1 Download Model
Part Image Part Image 1 Low-noise : NF=1.5dB typ (f=2GHz); High cut-off frequency : fT=10GHz typ (VCE=1V), fT=12.5GHz typ (VCE=3V); Low-voltage operation; High gain : Forward Transfer Gain =9.5dB typ (f=2GHz); Ultrasmall, slim fl at-lead package (1.4mm x 0.8mm x 0.6mm); Halogen free compliance SOT23 (3-Pin) 2SC5646A-TL-H 1 Download Model
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BF959 onsemi
1 Obsolete - VHF Transistor Other BF959 1 Download Model
Part Image Part Image 1 Low Noise : NF=0.9dB typ.(f=1GHz) : NF=1.4dB typ.(f=1.5GHz); High gain Forward Transfer Gain:10dB typ (f=1.5GHz); High cut-off frequency : fT=8GHz typ; Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : Forward Transfer Gain=5.5dB typ (f=1.5GHz) SOT23 (3-Pin) 2SC5245A-4-TL-E 1 Download Model
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2SC3837KT146 ROHM Semiconductor
1 NPN High frequency Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. Other 2SC3837KT146 1 Download Model
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