7N-10 Model Download Search Results
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FQT7N10LTF
onsemi
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1 | Low Crss ( Typ. 10pF); 1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A; 100% avalanche tested; Low gate charge ( Typ. 5.8nC) | SOT223 (3-Pin) | FQT7N10LTF |
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FQT7N10TF
onsemi
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1 | 100% avalanche tested; Low Crss ( Typ. 10pF); 1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A; Low gate charge ( Typ. 5.8nC) | SOT223 (3-Pin) | FQT7N10TF |
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TYS50404R7N-10
Laird-Signal Integrity Products
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1 | FIXED IND 4.7UH 3A 30 MOHM SMD | Other | TYS50404R7N-10 |
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NVMFS027N10MCL
onsemi
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1 | MOSFET – Power, Single N-Channel 100 V, 26 m, 28 A | Other | NVMFS027N10MCL |
2
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RBE037N10R1SZN6#HB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE037N10R1SZN6#HB0 |
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LQB18NNR47N10D
Murata Electronics
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1 | LQB18NN_10 Series Inductor 470nH ±30% 0603 (1608) | Other | LQB18NNR47N10D |
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NTBLS1D7N10MCTXG
onsemi
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1 | Low RDS(on); Low Qg and Capacitance; Softer Recovery Diode; Pb-Free | Other | NTBLS1D7N10MCTXG |
3
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FDP047N10
onsemi
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1 | RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A; High Performance Trench Technology for Extremely Low rDS(on); Fast switching speed; RoHS compliant; Low Gate Charge; High Power and Current Handling Capability | Transistor Outline, Vertical | FDP047N10 |
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NVMFD027N10MCLT1G
onsemi
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1 | Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFWD040N10MCLT1G − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVMFD027N10MCLT1G |
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BTD1RVFLT27N102
ROHM Semiconductor
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1 | Silicon RF Capacitors / Thin Film RASMIDSeries, 3.6V, 1000pf, DSN0402-2(SOD-992), Silicon(Si) Capacitor: BTD1RVFL102 is 0402 (01005) size Silicon Capacitor, ideal for Wearable equipment, Wireless, ROSA/TOSA. | Other | BTD1RVFLT27N102 |
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SQM47N10-24L_GE3
Vishay
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1 | SQM47N10-24L_GE3 N-Channel MOSFET, 47 A, 100 V SQ Rugged, 3-Pin D2PAK Vishay | Other | SQM47N10-24L_GE3 |
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LQB18NNR27N10B
Murata Electronics
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1 | LQB18NN_10 Series Inductor 270nH ±30% 0603 (1608) | Other | LQB18NNR27N10B |
3
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MCB2D7N10YH-TP
MCC
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1 | N-Channel MOSFET : -55°C to +175°C 2.7 mΩ 3.8 V 1 µA 100 nA 157 nC D2-PAK | Other | MCB2D7N10YH-TP |
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IPB017N10N5LFATMA1
Infineon
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1 | MOSFET DIFFERENTIATED MOSFETS | Other | IPB017N10N5LFATMA1 |
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BSZ097N10NS5ATMA1
Infineon
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1 | Trans MOSFET N-CH 100V 11A Automotive 8-Pin TSDSON EP T/R | Other | BSZ097N10NS5ATMA1 |
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TYS60204R7N-10
Laird Performance Materials
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1 | 4.7 µH Shielded Inductor 2 A 58mOhm Max Nonstandard | Other | TYS60204R7N-10 |
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IPB017N10N5ATMA1
Infineon
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1 | N-Channel 100 V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7 | Other | IPB017N10N5ATMA1 |
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IPT017N10NF2S
Infineon
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1 | Strong IRFETTM2 Power-Transistor N-Channl MOSFET | Other | IPT017N10NF2S |
2
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BSZ097N10NS5
Infineon
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1 | MOSFET N-Ch 100V 40A TSDSON-8 | Other | BSZ097N10NS5 |
3
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R5F72867N100FP#U2
Renesas Electronics
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1 | SH7285, SH7286 group are high-end single chip microcontroller incorporating an SH-2A core which realized up to 100MHz operation. The SH7286 and SH7285 incorporates large capacity Flash memory (SH7286:1MB, SH7285:768KB). The SH7286 also incorporates register banks. When an interrupt occurs, CPU internal register information is stored in registers at high speed. This makes it possible to improve real-time control performance greatly. The SH7286 also incorporates various peripheral functions suitable for indus | Quad Flat Packages | R5F72867N100FP#U2 |
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STP7N105K5
STMicroelectronics
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1 | N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in a TO-220 package | Transistor Outline, Vertical | STP7N105K5 |
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ISC027N10NM6ATMA1
Infineon
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1 | N-Channel MOSFET VDS=100V, RDS(on),max=2.7mΩ, ID=192A, Qoss=107nC, PG-TDSON-8 FL. | Other | ISC027N10NM6ATMA1 |
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R5F72867N100FA#U2
Renesas Electronics
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1 | SH7285, SH7286 group are high-end single chip microcontroller incorporating an SH-2A core which realized up to 100MHz operation. The SH7286 and SH7285 incorporates large capacity Flash memory (SH7286:1MB, SH7285:768KB). The SH7286 also incorporates register banks. When an interrupt occurs, CPU internal register information is stored in registers at high speed. This makes it possible to improve real-time control performance greatly. The SH7286 also incorporates various peripheral functions suitable for indus | Quad Flat Packages | R5F72867N100FA#U2 |
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STF7N105K5
STMicroelectronics
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1 | N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFET in TO-220FP package | Transistor Outline, Vertical | STF7N105K5 |
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MCU017N10YLQ-TP
MCC
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1 | N-CHANNEL MOSFET -55°C to +175°C DPAK(TO-252) | Other | MCU017N10YLQ-TP |
2
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