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SLG59H1127VTR
Renesas Electronics
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1 | The SLG59H1127V is a high-performance, self‑powered 15 mΩ NMOS load switch designed for all 4.5 to 12 V power rails up to 4 A. Using a proprietary MOSFET design, the SLG59H1127V achieves a stable 15 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1127V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1127V is available in a low thermal resistance, RoHS‑co | Other | SLG59H1127VTR |
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SLG59M1512VTR
Renesas Electronics
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1 | The SLG59M1512V is designed for power switching applications. The part comes with two 80 mΩ 1.0 A rated MOSFETs, each controlled by an ON control pin. Each MOSFET’s ramp rate is adjustable depending on the input current level of the ON pin. The product is packaged in an ultra‑small 1.6 mm x 1.0 mm package. | Other | SLG59M1512VTR |
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SLG59H1313C
Renesas Electronics
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1 | The SLG59H1313C features a low 23 mΩ RDSON internal nFET and protects low‑voltage 2.5 Vdc to 5.5 Vdc operating systems against voltage faults up to 29 Vdc. An internal clamp circuit protects the downstream components from surge voltage up to 100 V. The SLG59H1313C features a fast 50 ns (typ) over‑voltage response time that turns off the internal nFET if the input voltage exceeds the OVP threshold. The OVP threshold is adjustable with optional external resistors to any voltage between 4 V and 20 V. Over‑temp | BGA | SLG59H1313C |
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SLG59H1016VTR
Renesas Electronics
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1 | The SLG59H1016V is a high‑performance, self‑powered 13.1 mΩ NMOS load switch designed for all 4.5 to 22 V power rails up to 3.5 A. Using a proprietary MOSFET design, the SLG59H1016V achieves a stable 13.1 mΩ RDSON across a wide input/supply voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1016V package also exhibits a low thermal resistance for high-current operation. Designed to operate over a -40 °C to 125 °C range, the SLG59H1016V is available in a low thermal resis | Other | SLG59H1016VTR |
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SLG59H1403C
Renesas Electronics
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1 | The SLG59H1403C is a high voltage GreenFET Load Switch designed for OR’ing or manual Power MUX applications. The part comes with two 3 A rated load switches that are well suited for a variety of systems having multiple power sources. The devices will automatically detect, select, and seamlessly transition between available inputs. Additionally, manual switching between two power rails allowed. | BGA | SLG59H1403C |
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SLG59M1746C
Renesas Electronics
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1 | The SLG59M1746C is a high‑performance 1 A capable, single‑channel load switch designed for high‑side power control applications up to 1 A. This feature‑rich nFET load switch has been optimized for all small form‑factor, single‑cell Li‑ion applications including smartphone, fitness bands, and watches. | BGA | SLG59M1746C |
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SLG59M1746CTR
Renesas Electronics
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1 | The SLG59M1746C is a high‑performance 1 A capable, single‑channel load switch designed for high‑side power control applications up to 1 A. This feature‑rich nFET load switch has been optimized for all small form‑factor, single‑cell Li‑ion applications including smartphone, fitness bands, and watches. | BGA | SLG59M1746CTR |
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SLG59M1707V
Renesas Electronics
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1 | Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 125 °C extended industrial temperature range, the SLG59M1707V is a high‑performance 13 mΩ, 3.5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. With a fixed VOUT slew rate of 3 V/ms, inrush current is internally limited. Using a proprietary MOSFET design, the SLG59M1707V achieves a stable 13 mΩ RDSON across a wide input/supply voltage range. The SLG59M1707V also incorporates resistor | Other | SLG59M1707V |
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SLG59H1126VTR
Renesas Electronics
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1 | The SLG59H1126V is a high‑performance, self‑powered 18 mΩ NMOS load switch designed for all 4.5 to 12 V power rails up to 6 A. Using a proprietary MOSFET design, the SLG59H1126V achieves a stable 18 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1126V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1126V is available in a low thermal resistance, RoHS‑co | Other | SLG59H1126VTR |
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SLG59M1735C
Renesas Electronics
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1 | The SLG59M1735C is a high performance 10.5 mΩ, 4 A single-channel nFET load switch which can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1735C incorporates two-level overload current protection, thermal shutdown protection, and soft-start control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1735C achieves its stable 10.5 mΩ RDSON across a wide input voltage range. Through t | BGA | SLG59M1735C |
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SLG59M1526V
Renesas Electronics
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1 | The SLG59M1526V is a 9A dual-channel power switch with charge pump, ramp control, output discharge, and protection in a single 6mm² package. It is designed for load switching applications. The part comes with two 4.5A rated MOSFETs switched on by two ON control pins. Each MOSFET's turn-on time is independently adjusted by an external capacitor. | Other | SLG59M1526V |
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SLG59M1551V
Renesas Electronics
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1 | The SLG59M1551V is designed for load switching applications. The part comes with one 15.5 mΩ 2.0 A rated MOSFET controlled by a single ON control pin. The product is packaged in an ultra‑small 1.0 mm x 1.0 mm package. | Other | SLG59M1551V |
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SLG59M1557V
Renesas Electronics
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1 | The SLG59M1557V is designed for load switching applications with ultra low quiescent current. The part comes with one 28.5 mΩ 1.0 A rated P‑channel MOSFET controlled by a single ON control pin. The product is packaged in an ultra‑small 1.0 mm x 1.0 mm package. | Other | SLG59M1557V |
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SLG59M1709VTR
Renesas Electronics
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1 | Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 85 °C temperature range, the SLG59M1709V is a high-performance 4 mΩ, 4 A single-channel nFET load switch with adjustable inrush current control which is achieved by adjusting the VOUT slew rate with an external capacitor. Using a proprietary MOSFET design, the SLG59M1709V achieves a stable 4 mΩ RDSON across a wide input/supply voltage range. Incorporating two-stage current protection as well as thermal protection, the SLG59M | Other | SLG59M1709VTR |
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SLG59M1707VTR
Renesas Electronics
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1 | Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 125 °C extended industrial temperature range, the SLG59M1707V is a high‑performance 13 mΩ, 3.5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. With a fixed VOUT slew rate of 3 V/ms, inrush current is internally limited. Using a proprietary MOSFET design, the SLG59M1707V achieves a stable 13 mΩ RDSON across a wide input/supply voltage range. The SLG59M1707V also incorporates resistor | Other | SLG59M1707VTR |
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SLG59M1657VTR
Renesas Electronics
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1 | The SLG59M1657V is a high‑performance 8.4 mΩ, 4 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1657V incorporates two-level overload current protection, thermal shutdown protection, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1657V achieves a stable 8.4 mΩ RDSON across a wide input voltage range. In additi | Other | SLG59M1657VTR |
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SLG59M1717VTR
Renesas Electronics
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1 | Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 85 °C Industrial temperature range, the SLG59M1717V is a high‑performance 4 mΩ, 5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. The SLG59M1717V features adjustable inrush current control which is achieved by adjusting the VOUT slew rate with an external capacitor. Using a proprietary MOSFET design, the SLG59M1717V achieves a stable 4 mΩ RDSON across a wide input/supply voltage ran | Other | SLG59M1717VTR |
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SLG59M309V
Renesas Electronics
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1 | The SLG59M309V is a 7.8 mΩ 4 A single-channel load switch that is able to switch 1 to 5.5 V power rails. The product is packaged in an ultra-small 1.5 mm x 2.0 mm package. | Other | SLG59M309V |
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SLG59M1658V
Renesas Electronics
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1 | The SLG59M1658V is a high performance 17 mΩ, 2.5 A single‑channel nFET load switch that can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1658V incorporates two‑level overload current protection, thermal shutdown protection, fast output voltage discharge, and in-rush current control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1658V achieves a stable 17 mΩ RDSON across a wide | Other | SLG59M1658V |
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SLG59M1639VTR
Renesas Electronics
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1 | The SLG59M1639V is a dual‑channel, 45 mΩ PMOS load switch designed to switch 1.5 to 5.5 V power rails up to 2 A in each channel. When either channel is enabled, reverse‑current protection will quickly open the switch in the event of a reverse‑voltage condition is detected (a VOUT > VIN + 50 mV condition opens the switch). In the event that the channel’s VIN voltage is too low, the load switch also contains an internal UVLO threshold monitor to keep or to turn the switch OFF. Each load switch is independentl | Other | SLG59M1639VTR |
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SLG59M1614V
Renesas Electronics
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1 | The SLG59M1614V is an 8.5 mΩ 4 A single-channel load switch that is able to switch 0.85 to 5.5 V power rails. The product is packaged in an ultra-small 1.5 mm x 2.0 mm package. | Other | SLG59M1614V |
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SLG59H1008VTR
Renesas Electronics
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1 | The SLG59H1008V is a high‑performance 13.3 mΩ NMOS load switch designed to control 12 V or 24 V power rails up to 4 A. Using a proprietary MOSFET design, the SLG59H1008V achieves a stable 13.3 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1008V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1008V is available in a low thermal resistance, RoHS‑complian | Other | SLG59H1008VTR |
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SLG59M1515V
Renesas Electronics
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1 | The SLG59M1515V is a 20 mΩ 2.0 A single‑channel load switch with configurable slew rate control. The device can enable fast power rail turn on with big cap loading. Internal circuit limits max inrush current to prevent device damage. The product is packaged in an ultra‑small 1.0 mm x 1.6 mm package. | Other | SLG59M1515V |
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SLG59H1132V
Renesas Electronics
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1 | 22 V, 13 mΩ, 6 A Load Switch with VIN Lockout Select and MOSFET Analog Current Monitor Output | Other | SLG59H1132V |
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SLG59M1446V
Renesas Electronics
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1 | Ultra-small Dual 40 mΩ, 1.0 A Integrated Power Switch with Discharge STDFN 8L | Other | SLG59M1446V |
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