Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W25M512JVESM
Winbond
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1 | 512Mb Serial NOR Flash 104MHz SON8 2.7V - 3.6V -40℃ ~ 85℃ / -40℃ ~ 105℃ / -40℃ ~ 125 WSON8 8X6mm | Small Outline No-lead | W25M512JVESM |
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W631GU6RB11K
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GU6RB11K |
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W632GU6RB11J
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU6RB11J |
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W9751G6NB18K
Winbond
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1 | 512Mb DDR2 SDRAM 1066MHz VFBGA84 | BGA | W9751G6NB18K |
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W94AD6KBHA5K
Winbond
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1 | VFBGA60 | BGA | W94AD6KBHA5K |
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W634GU8RB09J
Winbond
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1 | 4Gb DDR3 SDRAM 2133MHz VFBGA78 | BGA | W634GU8RB09J |
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W631GU6MB15K
Winbond
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1 | 1Gb DDR3 SDRAM 1333MHz VFBGA96 | BGA | W631GU6MB15K |
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W25Q16JVXGAQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/ | Small Outline No-lead | W25Q16JVXGAQ |
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W25N02KVZEJE
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N02KVZEJE |
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W632GU8MB11W
Winbond
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1 | VFBGA - 78 | BGA | W632GU8MB11W |
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W25Q64JWZPSQ
Winbond
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1 | 64Mb Serial NOR Flash 104MHz SON8 | Small Outline No-lead | W25Q64JWZPSQ |
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W632GU6QB11I
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU6QB11I |
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W25Q64JWTBSQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q64JW: 64M-bit / 8M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.7V to 1.95Vsupply– <1µA Power-down (typ.)– -40°C to +85°C/+105°C operating range | BGA | W25Q64JWTBSQ |
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W9825G6KH75K
Winbond
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1 | • 3.3V ± 0.3V Power Supply• Up to 200 MHz Clock Frequency• 4,194,304 Words 4 Banks 16 Bits Organization• Self Refresh Mode: Standard and Low Power• CAS Latency: 2 and 3• Burst Length: 1, 2, 4, 8 and Full Page• Burst Read, Single Writes Mode• Byte Data Controlled by LDQM, UDQM• Power Down Mode• Auto-precharge and Controlled Precharge• 8K Refresh Cycles/64 mS, @ -40°C ≤ TA ≤ 85°C• 8K Refresh Cycles/16 mS, @ 85°C < TA ≤ 105°C• Interface: LVTTL• Packaged in TSOP II 54-pin, 400 mil | Small Outline Packages | W9825G6KH75K |
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W97AH2KBVA1A
Winbond
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1 | PACKAGE-BGA134 | BGA | W97AH2KBVA1A |
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W634GU6RB09I
Winbond
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1 | 4Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W634GU6RB09I |
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W632GG8MB11W
Winbond
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1 | SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB11W |
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W634GU8NB11K
Winbond
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1 | PACKAGE-BGA78 | BGA | W634GU8NB11K |
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W25N02KVZEJU
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N02KVZEJU |
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W25N01KWZEJU
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N01KWZEJU |
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W632GU8MB15K
Winbond
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1 | DDR3 SDRAM 1333MHz | BGA | W632GU8MB15K |
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W632GG6MB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W632GG6MB11S |
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W25N01KVZEJE
Winbond
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1 | QspiNAND Flash 104MHz | Small Outline No-lead | W25N01KVZEJE |
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W632GU8RB11K
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU8RB11K |
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W631GU6MB09S
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU6MB09S |
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