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Parts from Winbond

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 1Gb SLC NAND Flash MHz VFBGA63 BGA W29N01HVBKNF 1 Download Model
Part Image Part Image 1 64Mb Serial NOR Flash 104MHz SON8 Other W25Q64JWUUSQ 1 Download Model
Part Image Part Image 1 SDRAM - DDR3 Memory IC 1Gbit Parallel 667 MHz 20 ns 78-VFBGA (10.5x8) BGA W632GG8MB15S 1 Download Model
Part Image Part Image 1  Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w BGA W631GG8NB15S 1 Download Model
Part Image Part Image 1 2Gb QspiNAND Flash 166MHz SON8 Small Outline No-lead W25N02JWZEIF 1 Download Model
Part Image Part Image 1 256Mb HYPERRAM 400MHz TFBGA (5X5)24 BGA W958D8NBYA5I 1 Download Model
Part Image Part Image 1  New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.65V to 1.95V supply– <0.1µA Power-down (typ.)– -40°C to +85°C operating range Small Outline No-lead W25Q16JWZPSM 1 Download Model
Part Image Part Image 1  New Family of SpiFlash Memories– W25Q16JW: 16M-bit / 2M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Quad I/O SPI clocks– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Low Power, Wide Temperature Range– Single 1.65V to 1.95V supply– <0.1µA Power-down (typ.)– -40°C to +85°C operating range Small Outline Packages W25Q16JWSSAQ 1 Download Model
Part Image Part Image 1 VFBGA134 BGA W97AH2KBVX2E 1 Download Model
Part Image Part Image 1 DDR2 SDRAM 667MHz BGA W9751G6NB-3J 1 Download Model
Part Image Part Image 1 32Mb Serial NOR Flash 133MHz SOP8 Small Outline Packages W25Q32JVSNJQ 1 Download Model
Part Image Part Image 1 DDR3 SDRAM 2133MHz BGA W634GU6RB09A 1 Download Model
Part Image Part Image 1 SDRAM 166MHz TSOPII50 Small Outline Packages W9816G6JH-6 1 Download Model
Part Image Part Image 1 1Gb Serial NOR Flash 133MHz SOP16 Small Outline Packages W25Q01JVSFJQ 1 Download Model
Part Image Part Image 1 DDR3 SDRAM 1333MHz BGA W634GU8NB15A 1 Download Model
Part Image Part Image 1 1Gb DDR3 SDRAM 1333MHz VFBGA96 BGA W631GU6NB15A 1 Download Model
Part Image Part Image 1 PACKAGE-134BGA BGA W97AH2KBVA1W 1 Download Model
Part Image Part Image 1 128Mb DDR2 SDRAM 800MHz TFBGA 84 BGA W9712G6KB25A 1 Download Model
Part Image Part Image 1 512Mb Low Power SDR SDRAM 166MHz VFBGA90 1.8V/1.8V BGA W989D2DBJX6E 1 Download Model
Part Image Part Image 1  Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data BGA W9751G8NB25W 1 Download Model
Part Image Part Image 1 2Gb DDR3 SDRAM 2133MHz VFBGA96 BGA W632GU6RB09A 1 Download Model
Part Image Part Image 1 SON8 Small Outline No-lead W25Q512JVEJQ 1 Download Model
Part Image Part Image 1 Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit BGA W631GG8MB12K 1 Download Model
Part Image Part Image 1 DDR3 SDRAM 2133MHz BGA W631GU8NB09A 1 Download Model
Part Image Part Image 1  New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/ Small Outline No-lead W25Q16JVUXAM 1 Download Model