Showing 25 of 10385 results
| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W29N01HVDINF
Winbond
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1 | 1Gb SLC NAND Flash MHz VFBGA48 | BGA | W29N01HVDINF |
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W634GG6NB11I
Winbond
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1 | 4Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W634GG6NB11I |
3
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W971GG6NB-18
Winbond
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1 | SDRAM - DDR2 Memory IC 1Gbit SSTL_18 533 MHz 58.125 ns 84-TFBGA (8x12.5) | BGA | W971GG6NB-18 |
3
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W25Q16JLZPIG
Winbond
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1 | 16Mb Serial NOR Flash 104MHz SON8 | Small Outline No-lead | W25Q16JLZPIG |
3
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W9751G6NB-3I
Winbond
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1 | DDR2 SDRAM 667MHz | BGA | W9751G6NB-3I |
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W9751G8NB-3I
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3I |
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W25Q16JVZPJM
Winbond
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1 | 16Mb Serial NOR Flash 133MHz SON8 | Small Outline No-lead | W25Q16JVZPJM |
3
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W25Q512JVBIM
Winbond
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1 | 512Mb Serial NOR Flash 133MHz TFBGA (5X5)24 | BGA | W25Q512JVBIM |
3
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W948V6KBHX6I
Winbond
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1 | 256Mb Low Power DDR SDRAM 333MHz VFBGA60 | BGA | W948V6KBHX6I |
3
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W25X40CLSNIG
Winbond
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1 | 4Mb Serial NOR Flash 104MHz SOP8 | Small Outline Packages | W25X40CLSNIG |
3
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W29N02GVBIAA
Winbond
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1 | 2Gb SLC NAND Flash MHz VFBGA63 | BGA | W29N02GVBIAA |
3
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W25Q16JVZPJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q16JV: 16M-bit / 2M-byte (2,097,152)– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Single, Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles per sector– More than 20-year data retention Efficient “Continuous Read”– Continuous Read with 8/16/32 | Small Outline No-lead | W25Q16JVZPJQ |
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W25Q01NWSFJQ
Winbond
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1 | New Family of SpiFlash Memories– W25Q01NW: two 512M-bit / 128M-byte– Standard SPI: CLK, /CS, DI, DO– Dual SPI: CLK, /CS, IO0, IO1,– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-year data retention Efficient “Continuous Read”– Quad Peri | Small Outline Packages | W25Q01NWSFJQ |
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W25N02KWTBJU
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N02KW: 2G-bit / 256M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S sequential data transfer rate– Fast Program/Erase performance– 100,000 erase/program cycles(5) (6)– 10-year data retention Low P | BGA | W25N02KWTBJU |
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W29N01HZSINA
Winbond
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1 | Basic Features– Density: 1Gbit (Single chip solution)– Vcc: 1.7V to 1.95V– Bus width: x8, x16– Operating temperature Industrial: -40°C to 85°C Industrial Plus: -40°C to 105°C Single-Level Cell (SLC) technology. Organization– Density: 1G-bit/128M-byte– Page size 2,112 bytes (2048 + 64 bytes) 1,056 words (1024 + 32 words)– Block size 64 pages (128K + 4K bytes) 64 pages (64K + 2K words) Highest Performance– Read performance (Max.) Random read: 25us Sequential re | Small Outline Packages | W29N01HZSINA |
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W25Q64JVTBSQ
Winbond
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1 | 64Mb Serial NOR Flash 133MHz TFBGA (5X5)24 | BGA | W25Q64JVTBSQ |
3
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W29N01HZBINF
Winbond
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1 | 1Gb SLC NAND Flash MHz VFBGA63 | BGA | W29N01HZBINF |
3
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W66AQ6NBHAHK
Winbond
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1 | VFBGA100 | BGA | W66AQ6NBHAHK |
3
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W9725G6KB25K
Winbond
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1 | 256Mb DDR2 SDRAM 800MHz WBGA84 | BGA | W9725G6KB25K |
3
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W632GG6MB12K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W632GG6MB12K |
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W25Q512NWBJM
Winbond
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1 | New Family of SpiFlash Memories– W25Q512NW: 512M-bit / 64M-byte– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– SPI/QPI DTR (Double Transfer Rate) Read– 3 or 4-Byte Addressing Mode– Software & Hardware Reset(1) Highest Performance Serial Flash– 133MHz Standard/Dual/Quad SPI clocks– 266/532MHz equivalent Dual/Quad SPI– 66MB/S continuous data transfer rate– Min. 100K Program-Erase cycles– More than 20-y | BGA | W25Q512NWBJM |
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W25Q32JWUUSM
Winbond
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1 | FLASH - NOR Memory IC 32Mbit SPI - Quad I/O 133 MHz 8-USON (4x3) | Other | W25Q32JWUUSM |
3
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W9751G6KB18W
Winbond
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1 | DDR2 SDRAM 1066MHz | BGA | W9751G6KB18W |
3
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Download Model |
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W632GU6RB11S
Winbond
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1 | 2Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W632GU6RB11S |
3
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Download Model |
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W25N02KWTBJR
Winbond
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1 | New W25N Family of QspiNANDMemories– W25N02KW: 2G-bit / 256M-Byte– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3– Compatible SPI serial flash commands Highest Performance Serial NAND Flash– 104MHz Standard/Dual/Quad SPI clocks– 208/416MHz equivalent Dual/Quad SPI– 50MB/S sequential data transfer rate– Fast Program/Erase performance– 100,000 erase/program cycles(5) (6)– 10-year data retention Low P | BGA | W25N02KWTBJR |
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Download Model |