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ISL89411IBZ-T13
Renesas Electronics
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1 | The ISL89410, ISL89411, ISL89412 ICs are similar to the EL7202, EL7212, EL7222 series but with greater VDD ratings. These are very high speed matched dual drivers capable of delivering peak currents of 2. 0A into highly capacitive loads. The high speed performance is achieved by means of a proprietary Turbo-Driver circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays ma | Small Outline Packages | ISL89411IBZ-T13 |
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NCP302045MNTWG
onsemi
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1 | Capable of Switching at Frequencies up to 2 MHz; Compatible with 3.3 V or 5 V PWM Input; Responds Properly to 3-level PWM Inputs; Supports Intel® Power State 4; Average Current up to 45A | Other | NCP302045MNTWG |
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MAX4420EPA+
Analog Devices
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1 | High-Speed, 6A MOSFET Driver (Noninverting) | Dual-In-Line Packages | MAX4420EPA+ |
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NCV51153CADWR2G
onsemi
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1 | 5 kVRMS Isolation for 1 Minute; Separated Outputs (NCV51153xA); Wide Bias Voltage Range Including Negative VEE and VCC; UVLO options: 6-V, 9-V, 12-V, 17-V; 4.5−A Peak Source, 9−A Peak Sink Output Current Capability; 36 ns Propagation Delay with 5 ns Max Delay Matching; 3−V to 20−V Input Supply Voltage; 200 V/ns dV/dt Immunity | Small Outline Packages | NCV51153CADWR2G |
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NCD57201DR2G
onsemi
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1 | Reliable Operation for Vs Negative Swing to -800V; Galvanic Isolated High Side Driver; Dead-time & Interlock protection; CMTI up to 50 kV/us; Secured Output Low State without VDD/VB; VDD/VB Supply Range up to 20 V; High Peak Current Output (+1.9 A / -2.3 A) | Small Outline Packages | NCD57201DR2G |
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ISL6594DCRZ-T
Renesas Electronics
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1 | The ISL6594D is high frequency MOSFET driver specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver combined with the ISL6594D Digital Multi-Phase Buck PWM controller and N-Channel MOSFETs forms a complete core-voltage regulator solution for advanced microprocessors. The ISL6594D drives both upper and lower gates over a range of 4. 5V to 13. 2V. This drive-voltage provides the flexibility necessary to optimize applications invol | Other | ISL6594DCRZ-T |
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RAJ2930004AGM
Renesas Electronics
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1 | The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in | Small Outline Packages | RAJ2930004AGM |
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ISL55111IVZ
Renesas Electronics
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1 | The ISL55111 is a dual high-speed MOSFET driver intended for applications requiring accurate pulse generation and buffering. Target applications include ultrasound, CCD imaging, piezoelectric distance sensing, and clock generation circuits. With a wide output voltage range and low ON-resistance, these devices can drive a variety of resistive and capacitive loads with fast rise and fall times, allowing high-speed operation with low skew, as required in large CCD array imaging applications. The ISL55111 is co | Small Outline Packages | ISL55111IVZ |
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LTC7060IMSE#WPBF
Analog Devices
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1 | 100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time | Small Outline Packages | LTC7060IMSE#WPBF |
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MAX15492BGTA/V+T
Analog Devices
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1 | -40°C to +105°C | Small Outline No-lead | MAX15492BGTA/V+T |
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TPM27524-DF4R
3Peak Incorporated
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1 | 8-DFN (2x2) | Small Outline No-lead | TPM27524-DF4R |
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ISL6612ACBZA-T
Renesas Electronics
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1 | The ISL6612A and ISL6613A are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612A drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613A drives both uppe | Small Outline Packages | ISL6612ACBZA-T |
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2ED2182S06FXUMA1
Infineon
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1 | INFINEON - 2ED2182S06FXUMA1 - MOSFET DRIVER, -40 TO 125DEG C | Small Outline Packages | 2ED2182S06FXUMA1 |
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LTC7060IMSE#WTRPBF
Analog Devices
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1 | Gate Drivers 100V Half Bridge Driver w/ Floating Grds | Small Outline Packages | LTC7060IMSE#WTRPBF |
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BM63574S-VA
ROHM Semiconductor
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1 | 600V IGBT Intelligent Power Module (IPM) | Other | BM63574S-VA |
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A3935KLQTR-T
Allegro Microsystems
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1 | Three-Phase Power MOSFET Controller | Small Outline Packages | A3935KLQTR-T |
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IXDD604SI
LITTELFUSE
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1 | Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV | Small Outline Packages | IXDD604SI |
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LTC7004JMSE#WPBF
Analog Devices
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1 | Fast 60V High Side NMOS Static Switch Driver with PassThru | Small Outline Packages | LTC7004JMSE#WPBF |
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1EDI40I12AHXUMA1
Infineon
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1 | Infineon 1EDI40I12AHXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -6.8 A, 7.5 A 8-Pin, DSO | Small Outline Packages | 1EDI40I12AHXUMA1 |
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L6391N
STMicroelectronics
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1 | High voltage high and low-side driver | Small Outline Packages | L6391N |
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2ED24427N01FXUMA1
Infineon
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1 | Gate Drivers LOW SIDE DRIVERS | Small Outline Packages | 2ED24427N01FXUMA1 |
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IXDN609YI
LITTELFUSE
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1 | Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET | Other | IXDN609YI |
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DGD0216WT-7
Diodes Incorporated
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1 | DIODES INC. - DGD0216WT-7 - Gate Driver, Low Side, IGBT, MOSFET, Inverting, Non-Inverting, 1 Channel, TSOT-25-5, 4.5 V to 18 V | Other | DGD0216WT-7 |
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L6398DTR
STMicroelectronics
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1 | High voltage high and low-side driver | Small Outline Packages | L6398DTR |
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MAX628ESA+
Analog Devices
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1 | Dual-Power MOSFET Drivers | Small Outline Packages | MAX628ESA+ |
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