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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 8Gb SLC NAND Flash MHz VFBGA63 BGA W29N08GVBIAA 1 Download Model
Part Image Part Image 1 2Gb SLC NAND Flash MHz VFBGA48 BGA W29N02KZDIBE 1 Download Model
Part Image Part Image 1 8Gb SLC NAND Flash MHz TSOPI48 Small Outline Packages W29N08GVSIAF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz VFBGA63 BGA W29N04GVBIAA 1 Download Model
Part Image Part Image 1 • Basic Features– Density: 4Gbit (Single chip solution)– Vcc: 2.7V to 3.6V– Bus width: x8– Operating temperature▪ Industrial: -40°C to 85°C• Single-Level Cell (SLC) technology.• Organization– Density: 4G-bit/512M-byte– Page size▪ 2,112 bytes (2048 + 64 bytes)– Block size▪ 64 pages (128K + 4K bytes)• Highest Performance– Read performance (Max.)▪ Random read: 25us▪ Sequential read cycle: 25ns– Write Erase performance▪ Page program time: 250us(typ.)▪ Block erase time: 2ms( Small Outline Packages W29N04GVSIAF 1 Download Model
Part Image Part Image 1 SLC NAND Flash MHz Small Outline Packages W29N04GZSJBF 1 Download Model
Part Image Part Image 1 Basic Features– Density: 4Gbit (Single chip solution)– Vcc: 2.7V to 3.6V– Bus width: x8– Operating temperature▪ Industrial: -40°C to 85°C• Single-Level Cell (SLC) technology.• Organization– Density: 4G-bit/512M-byte– Page size▪ 2,112 bytes (2048 + 64 bytes)– Block size▪ 64 pages (128K + 4K bytes)• Highest Performance– Read performance (Max.)▪ Random read: 25us▪ Sequential read cycle: 25ns– Write Erase performance▪ Page program time: 250us(typ.)▪ Block erase time: 2ms(ty BGA W29N04GVBJAF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz TSOPI48 Small Outline Packages W29N04GZSIBA 1 Download Model
Part Image Part Image 1 1Gb SLC NAND Flash MHz TSOPI48 Small Outline Packages W29N01HVSINA 1 Download Model
Part Image Part Image 1  Basic Features– Density: 2Gbit (Single chip solution)– Vcc: 2.7V to 3.6V– Bus width: x8– Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology Organization– Density: 2G-bit/256M-byte– Page size 2,176 bytes– Block size 64 pages Highest Performance– Read performance (Max.) Random read: 25us Sequential read cycle: 25ns– Write Erase performance Page program time: 250us (typ.) Block erase time: 2ms (typ.)– Endurance: 60,000 Erase/Pr Small Outline Packages W29N02KVSIAF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz VFBGA63 BGA W29N04GVBJAA 1 Download Model
Part Image Part Image 1 2Gb SLC NAND Flash MHz VFBGA63 BGA W29N02GZBIBA 1 Download Model
Part Image Part Image 1 1Gb SLC NAND Flash MHz VFBGA63 BGA W29N01HZBJNF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz VFBGA63 BGA W29N04GVBIAF 1 Download Model
Part Image Part Image 1 8Gb SLC NAND Flash MHz TSOPI48 Small Outline Packages W29N08GVSIAA 1 Download Model
Part Image Part Image 1 2Gb SLC NAND Flash Memory with uniform 2KB+64B page size BGA W29N02GVBIAF 1 Download Model
Part Image Part Image 1 W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY Small Outline Packages W29N01GVSCAA 1 Download Model
Part Image Part Image 1 Basic Features– Density : 8Gbit (2 chip stacked solution)– Vcc : 1.7V to 1.95V– Bus width : x8/x16– Operating temperature Industrial: -40°C to 85°C Industrial Plus: -40°C to 105°C Single-Level Cell (SLC) technology. Organization– Density: 8G-bit/1G-byte– Page size 2,112 bytes (2048 + 64 bytes) 1,056 words (1024 + 32 words)– Block size 64 pages (128K + 4K bytes) 64 pages (64K + 2K words) Highest Performance– Read performance (Max.) Random read: 25us Sequential BGA W29N08GZBJBF 1 Download Model
Part Image Part Image 1 Basic Features– Density : 4Gbit (Single chip solution)– Vcc : 1.7V to 1.95V– Bus width : x8 x16– Operating temperature Industrial: -40°C to 85°C Industrial Plus: -40°C to 105°C Single-Level Cell (SLC) technology. Organization– Density: 4G-bit/512M-byte– Page size 2,112 bytes (2048 + 64 bytes) 1,056 words (1024 + 32 words)– Block size 64 pages (128K + 4K bytes) 64 pages (64K + 2K words) Highest Performance– Read performance (Max.) Random read: 25us Sequential BGA W29N04GZBIBF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz VFBGA63 BGA W29N04GZBJBF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz VFBGA63 BGA W29N04GZBIBA 1 Download Model
Part Image Part Image 1 2Gb SLC NAND Flash Memory with uniform 2KB+128B page size BGA W29N02KVDIAF 1 Download Model
Part Image Part Image 1  Basic Features– Density : 8Gbit (2 chip stacked solution)– Vcc : 2.7V to 3.6V– Bus width : x8– Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization– Density: 8G-bit/1G-byte– Page size 2,112 bytes (2048 + 64 bytes)– Block size 64 pages (128K + 4K bytes) Highest Performance– Read performance (Max.) Random read: 25us Sequential read cycle: 25ns– Write Erase performance Page program time: 250us(typ.) Block erase time: BGA W29N08GVBIAF 1 Download Model
Part Image Part Image 1 4Gb SLC NAND Flash MHz TSOPI48 Small Outline Packages W29N04GZSIBF 1 Download Model
Part Image Part Image 1 1Gb SLC NAND Flash MHz VFBGA63 BGA W29N01HZBINA 1 Download Model
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