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FM18W08-SGTR
Infineon
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1 | CYPRESS SEMICONDUCTOR - FM18W08-SGTR - F-RAM, NON-VOL, 256KBIT, SOIC-28 | Small Outline Packages | FM18W08-SGTR |
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CY15V104QSN-108SXI
Infineon
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1 | FRAM 4Mbit Serial-SPI 1.8V 8-Pin SOIC Standard | Small Outline Packages | CY15V104QSN-108SXI |
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FM25V02A-DG
Infineon
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1 | Cypress Semiconductor FM25V02A-DG SPI FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin DFN | Small Outline No-lead | FM25V02A-DG |
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CY15B204QN-40SXE
Infineon
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1 | F-RAM FRAM | Small Outline Packages | CY15B204QN-40SXE |
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CY15E064J-SXA
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15E064J-SXA |
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FM25V10-GTR
Infineon
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1 | F-RAM 1M (128Kx8) 2.0-3.6V F-RAM | Small Outline Packages | FM25V10-GTR |
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MR25H10MDF
Everspin Technologies
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1 | MRAM 1Mbit Serial-SPI 3.3V Automotive 8-Pin DFN EP Tray | Small Outline No-lead | MR25H10MDF |
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MR4A08BCYS35R
Everspin Technologies
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1 | NVRAM MRAM Parallel 16Mbit 3.3V 44-Pin TSOP-II T/R | Small Outline Packages | MR4A08BCYS35R |
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M30162040108X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAR |
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M30042040108X0PSAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0PSAR |
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M3004316035NX0PBCR
Renesas Electronics
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1 | CABGA 10.00x10.00x1.27 mm 0.75mm Pitch (-40°C to 85°C)and industrial plus (-40°C to 105°C) operating temperature ranges. | BGA | M3004316035NX0PBCR |
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M10042040108X0IWAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0IWAR |
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M30042040054X0ISAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0ISAY |
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M10042040108X0PSAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040108X0PSAY |
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M10162040054X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAY |
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M10082040054X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAR |
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M30082040054X0PSAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0PSAR |
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M30162040108X0PSAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0PSAY |
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M10082040108X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0PWAY |
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M10162040054X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0IWAY |
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FM25V02A-DGTR
Infineon
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1 | F-RAM NVRAM FRAM Memory Serial | Small Outline No-lead | FM25V02A-DGTR |
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FM25V20-G
Infineon
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1 | IC FRAM 2MBIT SPI 40MHZ 8SOIC | Small Outline Packages | FM25V20-G |
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FM24CL64B-G
RAMTRON
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1 | IC, FRAM, 64K, I2C, 8SOIC | Small Outline Packages | FM24CL64B-G |
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FM25V05-G
Infineon
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1 | FM25V05-G Serial-SPI FRAM Memory, 512kbit, 2 → 3.6 V 8-Pin SOIC | Small Outline Packages | FM25V05-G |
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FM24CL04B-GTR
Infineon
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1 | CYPRESS SEMICONDUCTOR - FM24CL04B-GTR - F-RAM, NV, 4KBIT, 1MHZ, SOIC-8 | Small Outline Packages | FM24CL04B-GTR |
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