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FM18W08-SGTR
Infineon
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1 | CYPRESS SEMICONDUCTOR - FM18W08-SGTR - F-RAM, NON-VOL, 256KBIT, SOIC-28 | Small Outline Packages | FM18W08-SGTR |
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FM25V02A-DG
Infineon
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1 | Cypress Semiconductor FM25V02A-DG SPI FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin DFN | Small Outline No-lead | FM25V02A-DG |
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FM25V10-GTR
Infineon
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1 | F-RAM 1M (128Kx8) 2.0-3.6V F-RAM | Small Outline Packages | FM25V10-GTR |
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CY15E064J-SXA
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15E064J-SXA |
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CY15B204QN-40SXE
Infineon
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1 | F-RAM FRAM | Small Outline Packages | CY15B204QN-40SXE |
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CY15B064Q-SXET
Infineon
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1 | F-RAM F-RAM Memory Serial | Small Outline Packages | CY15B064Q-SXET |
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FM22LD16-55-BG
Infineon
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1 | F-RAM 4M (256Kx16) 55ns F-RAM | BGA | FM22LD16-55-BG |
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MR4A08BCYS35R
Everspin Technologies
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1 | NVRAM MRAM Parallel 16Mbit 3.3V 44-Pin TSOP-II T/R | Small Outline Packages | MR4A08BCYS35R |
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M30082040054X0PSAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30082040054X0PSAR |
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M3004316035NX0PBCR
Renesas Electronics
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1 | CABGA 10.00x10.00x1.27 mm 0.75mm Pitch (-40°C to 85°C)and industrial plus (-40°C to 105°C) operating temperature ranges. | BGA | M3004316035NX0PBCR |
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M30162040108X0PSAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0PSAY |
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M10082040108X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0PWAY |
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M30042040054X0ISAY
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040054X0ISAY |
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M10042040108X0IWAR
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10042040108X0IWAR |
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M10082040054X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0PSAR |
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M10162040054X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0PWAY |
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M10042040108X0PSAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040108X0PSAY |
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M30042040108X0PSAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30042040108X0PSAR |
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M10162040054X0IWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040054X0IWAY |
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M30162040108X0ISAR
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAR |
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FM25V01A-GTR
Infineon
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1 | FRAM (Ferroelectric RAM) Memory IC 128Kbit SPI 40 MHz 8-SOIC | Small Outline Packages | FM25V01A-GTR |
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FM24CL64B-G
RAMTRON
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1 | IC, FRAM, 64K, I2C, 8SOIC | Small Outline Packages | FM24CL64B-G |
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FM25V02A-DGTR
Infineon
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1 | F-RAM NVRAM FRAM Memory Serial | Small Outline No-lead | FM25V02A-DGTR |
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FM25V20-G
Infineon
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1 | IC FRAM 2MBIT SPI 40MHZ 8SOIC | Small Outline Packages | FM25V20-G |
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FM24CL16B-G
Infineon
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1 | Cypress Semiconductor FM24CL16B-G Serial-2 Wire FRAM Memory, 16kbit, 550ns, 2.7 → 3.65 V 8-Pin SOIC | Small Outline Packages | FM24CL16B-G |
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