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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 CYPRESS SEMICONDUCTOR - FM18W08-SGTR - F-RAM, NON-VOL, 256KBIT, SOIC-28 Small Outline Packages FM18W08-SGTR 1 Download Model
Part Image Part Image 1 FRAM 4Mbit Serial-SPI 1.8V 8-Pin SOIC Standard Small Outline Packages CY15V104QSN-108SXI 1 Download Model
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FM25V02A-DG Infineon
1 Cypress Semiconductor FM25V02A-DG SPI FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin DFN Small Outline No-lead FM25V02A-DG 1 Download Model
Part Image Part Image 1 F-RAM FRAM Small Outline Packages CY15B204QN-40SXE 1 Download Model
Part Image Part Image 1 F-RAM F-RAM Memory Serial Small Outline Packages CY15E064J-SXA 1 Download Model
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FM25V10-GTR Infineon
1 F-RAM 1M (128Kx8) 2.0-3.6V F-RAM Small Outline Packages FM25V10-GTR 1 Download Model
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MR25H10MDF Everspin Technologies
1 MRAM 1Mbit Serial-SPI 3.3V Automotive 8-Pin DFN EP Tray Small Outline No-lead MR25H10MDF 1 Download Model
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MR4A08BCYS35R Everspin Technologies
1 NVRAM MRAM Parallel 16Mbit 3.3V 44-Pin TSOP-II T/R Small Outline Packages MR4A08BCYS35R 1 Download Model
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M30162040108X0ISAR Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0ISAR 1 Download Model
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M30042040108X0PSAR Renesas Electronics
1 The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30042040108X0PSAR 1 Download Model
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M3004316035NX0PBCR Renesas Electronics
1 CABGA 10.00x10.00x1.27 mm 0.75mm Pitch (-40°C to 85°C)and industrial plus (-40°C to 105°C) operating temperature ranges. BGA M3004316035NX0PBCR 1 Download Model
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M10042040108X0IWAR Renesas Electronics
1 The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M10042040108X0IWAR 1 Download Model
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M30042040054X0ISAY Renesas Electronics
1 The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30042040054X0ISAY 1 Download Model
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M10042040108X0PSAY Renesas Electronics
1 The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M10042040108X0PSAY 1 Download Model
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M10162040054X0PWAY Renesas Electronics
1 The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M10162040054X0PWAY 1 Download Model
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M10082040054X0PSAR Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M10082040054X0PSAR 1 Download Model
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M30082040054X0PSAR Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30082040054X0PSAR 1 Download Model
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M30162040108X0PSAY Renesas Electronics
1 The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages M30162040108X0PSAY 1 Download Model
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M10082040108X0PWAY Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M10082040108X0PWAY 1 Download Model
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M10162040054X0IWAY Renesas Electronics
1 The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead M10162040054X0IWAY 1 Download Model
Part Image Part Image 1 F-RAM NVRAM FRAM Memory Serial Small Outline No-lead FM25V02A-DGTR 1 Download Model
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FM25V20-G Infineon
1 IC FRAM 2MBIT SPI 40MHZ 8SOIC Small Outline Packages FM25V20-G 1 Download Model
Part Image Part Image 1 IC, FRAM, 64K, I2C, 8SOIC Small Outline Packages FM24CL64B-G 1 Download Model
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FM25V05-G Infineon
1 FM25V05-G Serial-SPI FRAM Memory, 512kbit, 2 → 3.6 V 8-Pin SOIC Small Outline Packages FM25V05-G 1 Download Model
Part Image Part Image 1 CYPRESS SEMICONDUCTOR - FM24CL04B-GTR - F-RAM, NV, 4KBIT, 1MHZ, SOIC-8 Small Outline Packages FM24CL04B-GTR 1 Download Model
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