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AT27C080-90PU
Microchip
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1 | AT27C080-90PU, OTP EPROM Memory 8Mbit 1M x 8 bit 90ns 4.5 → 5.5 V 32-Pin PDIP | Dual-In-Line Packages | AT27C080-90PU |
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AT27C512R-45JU-T
Microchip
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1 | EPROM 45NS, PLCC, IND TEMP, GREEN, T&R | Plastic Leaded Chip Carrier | AT27C512R-45JU-T |
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BQ2022ALPR
Texas Instruments
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1 | 1K-bit Serial EPROM with SDQ Interface | Other | BQ2022ALPR |
3
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M27C1001-12F1
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Dual-In-Line Packages | M27C1001-12F1 |
3
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HM1-6642B/883
Renesas Electronics
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1 | The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device High-Speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with recent generation microprocessors that use multiplexed address/data bus structures, such as the 8085. The output enable controls, both active low and active high, further simpli | Ceramic Dual-In-Line Packages | HM1-6642B/883 |
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HS1-6664RH-Q
Renesas Electronics
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1 | The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr | Ceramic Dual-In-Line Packages | HS1-6664RH-Q |
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ATSHA204A-XHDA-T
Microchip
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1 | Security ICs / Authentication ICs CryptAuthEE SHA256 TWI | Small Outline Packages | ATSHA204A-XHDA-T |
3
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AT88SC0808CA-SH-T
Microchip
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1 | CryptoMem, Gen2,8Kbit, 8Zone, 8SOIC, GRN | Small Outline Packages | AT88SC0808CA-SH-T |
3
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MB85AS4MTPF-G-BCERE1
FUJITSU
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1 | IC RAM 4M SPI 5MHZ 8SOP | Small Outline Packages | MB85AS4MTPF-G-BCERE1 |
3
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MB85R1001ANC-GE1
FUJITSU
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1 | F-RAM 1Mbit FRAM, 128kbit x8 parallel, 3.0V 3.6V - TSOP48 Tray | Small Outline Packages | MB85R1001ANC-GE1 |
3
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M24SR64-YDW6T/2
STMicroelectronics
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1 | STMICROELECTRONICS - M24SR64-YDW6T/2 - NFC / RFID Tag, M24SR Series, Read / Write, 13.553 MHz to 13.567 MHz, 8KB, 2.7 V to 5.5 V, TSSOP-8 | Small Outline Packages | M24SR64-YDW6T/2 |
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CC2544RHBR
Texas Instruments
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1 | 2.4GHz RF Value Line SoC with 32kB flash, USB, SPI and UART | Quad Flat No-Lead | CC2544RHBR |
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MB85RC1MTPNF-G-JNERE1
FUJITSU
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1 | FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 130ns 8-SOP | Small Outline Packages | MB85RC1MTPNF-G-JNERE1 |
3
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MB85RS4MTYPF-G-BCERE1
FUJITSU
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1 | F-RAM 4Mbit FRAM, SPI, 1.8 3.6V - SOP8 T&R (125?) | Small Outline Packages | MB85RS4MTYPF-G-BCERE1 |
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AT88SC0808CA-SH-T
Microchip
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1 | CryptoMem, Gen2,8Kbit, 8Zone, 8SOIC, GRN | Small Outline Packages | AT88SC0808CA-SH-T |
3
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MT43A4G40200NFA-S15:A
Micron
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1 | VDDM = 1.2V ±0.06V | BGA | MT43A4G40200NFA-S15:A |
3
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MR25H256MDF
Everspin Technologies
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1 | NVRAM 256Kb 3.3V 32Kx8 SPI | Small Outline No-lead | MR25H256MDF |
3
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MR2A16ACYS35
Everspin Technologies
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1 | NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM | Small Outline Packages | MR2A16ACYS35 |
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S27KS0641DPBHI020
Infineon
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1 | DRAM HyperRAM 1.8-V 64Mb | BGA | S27KS0641DPBHI020 |
3
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AT88SC0808CA-Y6H-T
Microchip
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1 | Security ICs / Authentication ICs CRYPTO Memory 8Kbit, 8zones | Small Outline No-lead | AT88SC0808CA-Y6H-T |
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M10042040054X0ISAY
Renesas Electronics
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1 | The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10042040054X0ISAY |
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M10082040054X0ISAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10082040054X0ISAY |
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M30042040054X0PWAR
Renesas Electronics
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1 | The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30042040054X0PWAR |
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M10162040108X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
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