FDP-0 Model Download Search Results
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FDP047AN08A0
onsemi
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1 | Qg(tot) = 92nC (Typ.), VGS = 10V ; rDS(ON) = 4.0 mΩ (Typ.), VGS = 10V, ID = 80A ; UIS Capability (Single Pulse and Repetitive Pulse); Low QRR Body Diode ; Low Miller Charge | Other | FDP047AN08A0 |
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NVAF-DP-03-2-05.0-S-2-K-TR
SAMTEC
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1 | 96 Position Connector High Density Array, Male Surface Mount Gold, 0.80 mm NovaRay® Extreme Density & Performance Socket | Other | NVAF-DP-03-2-05.0-S-2-K-TR |
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FDP075N15A_F102
onsemi
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1 | MOSFET PowerTrench N-Ch 150V 130A TO220 | Transistor Outline, Vertical | FDP075N15A_F102 |
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FDP038AN06A0_F102
onsemi
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1 | MOSFET 60V80A3.8OHMS MOSFET NCH PWR TRENCH | Transistor Outline, Vertical | FDP038AN06A0_F102 |
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NVAF-DP-03-2-07.0-S-2-K-TR
SAMTEC
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1 | 0.80 mm NovaRay® Extreme Density & Performance Socket | Other | NVAF-DP-03-2-07.0-S-2-K-TR |
3
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NVAF-DP-04-2-05.0-S-2-K-TR
SAMTEC
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1 | 64 Position Connector High Density Array, Male Surface Mount Gold | Other | NVAF-DP-04-2-05.0-S-2-K-TR |
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FDP047N10
onsemi
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1 | RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A; High Performance Trench Technology for Extremely Low rDS(on); Fast switching speed; RoHS compliant; Low Gate Charge; High Power and Current Handling Capability | Transistor Outline, Vertical | FDP047N10 |
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NVAF-DP-04-1-05.0-S-2-K-TR
SAMTEC
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1 | 32 Position Connector High Density Array, Male Surface Mount Gold | Other | NVAF-DP-04-1-05.0-S-2-K-TR |
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FDP083N15A-F102
onsemi
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1 | Low Gate Charge, QG = 64.5nC ( Typ.); High Power and Current Handling Capability; RoHS Compliant; Fast Switching Speed; High Performance Trench Technology for Extremely Low RDS(on); RDS(on) = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A | Transistor Outline, Vertical | FDP083N15A-F102 |
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NVAF–DP–04–2–05.0–S–2
SAMTEC
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1 | 0.80 mm NovaRay Extreme Density & Performance Socket | Other | NVAF–DP–04–2–05.0–S–2 |
3
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FDP090N10
onsemi
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1 | Fast switching speed; Low Gate Charge; RoHS compliant; High performance trench technology for extremely low RDS(on) ; High power and current handling capability ; RDS(on) = 7.2mΩ ( Typ.) @ VGS = 10V, ID = 75A | Transistor Outline, Vertical | FDP090N10 |
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FDP045N10A-F102
onsemi
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1 | Fast Switching Speed ; RoHS Compliant; High Power and Current Handling Capability ; RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A ; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge, QG = 54 nC ( Typ.) | Transistor Outline, Vertical | FDP045N10A-F102 |
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FDP032N08B_F102
onsemi
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1 | Fairchild FDP032N08B_F102 N-channel MOSFET Transistor, 211 A, 80 V, 3-Pin TO-220 | Transistor Outline, Vertical | FDP032N08B_F102 |
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FDP050AN06A0
onsemi
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1 | Low Qrr Body Diode; RDS(on) = 4.3mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 61nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge | Transistor Outline, Vertical | FDP050AN06A0 |
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FDP032N08
onsemi
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1 | RDS(on) = 2.5mΩ ( Typ.) @ VGS = 10V, ID = 75A; RoHS Compliant; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge; High Power and Current Handling Capability; Fast Switching Speed | Transistor Outline, Vertical | FDP032N08 |
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FDP036N10A
onsemi
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1 | Low Gate Charge, QG = 89nC ( Typ.); Fast Switching Speed; RDS(on) = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A; High Power and Current Handling Capability; High Performance Trench Technology for Extremely Low RDS(on); RoHS Compliant | Transistor Outline, Vertical | FDP036N10A |
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FDP032N08B-F102
onsemi
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1 | Low Reverse Recovery Charge, Qrr = 102 nC; RoHS Compliant; Enables High Efficiency in Synchronous Rectification; Soft Reverse Recovery Body Diode; Fast Switching Speed; 100% UIL Tested; RDS(on) = 2.85mΩ (Typ.)@ VGS = 10V, ID = 50A; Low FOM RDS(on)*QG | Transistor Outline, Vertical | FDP032N08B-F102 |
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NVAF-DP-02-1-05.0-S-2-K-TR
SAMTEC
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1 | Board to Board & Mezzanine Connectors 0.80 mm NovaRay Extreme Density & Performance Socket | Other | NVAF-DP-02-1-05.0-S-2-K-TR |
3
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NVAF-DP-06-1-05.0-S-2-K-TR
SAMTEC
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1 | Board to Board & Mezzanine Connectors 0.80 mm NovaRay Extreme Density & Performance Socket 6 row 1 bank | Other | NVAF-DP-06-1-05.0-S-2-K-TR |
3
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FDP085N10A_F102
onsemi
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1 | FDP085N10A_F102 N-Channel MOSFET Transistor, 96 A, 100 V, 3-Pin TO-220 Fairchild | Transistor Outline, Vertical | FDP085N10A_F102 |
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FDP053N08B-F102
onsemi
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1 | • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A• Low FOM RDS(on) * QG• Low Reverse-Recovery Charge, Qrr = 62.5 nC• Soft Reverse-Recovery Body Diode• Enables High Efficiency in Synchronous Rectification• Fast Switching Speed• 100% UIL Tested• RoHS Compliant | Transistor Outline, Vertical | FDP053N08B-F102 |
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NVAF–DP–02–1–05.0–S–2
SAMTEC
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1 | Connector Stacking Receptacle 32 Position 7mm/10mm Stack Height 0.8mm Solder Straight Surface Mount T/R | Other | NVAF–DP–02–1–05.0–S–2 |
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FDP075N15A-F102
onsemi
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1 | High Power and Current Handling Capability; Fast Switching; High Performance Trench Technology for Extremely Low RDS(on) ; RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A; RoHS Compliant; Low Gate Charge, QG = 77nC ( Typ.) | Transistor Outline, Vertical | FDP075N15A-F102 |
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FDP038AN06A0
onsemi
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1 | QG(tot) = 96nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; RDS(on) = 3.5mΩ (Typ.) @ VGS = 10V, ID = 80A; Low Qrr Body Diode | Transistor Outline, Vertical | FDP038AN06A0 |
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NVAF–DP–03–2–05.0–S–2
SAMTEC
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1 | 0.80 mm NovaRay Extreme Density & Performance Socket | Other | NVAF–DP–03–2–05.0–S–2 |
3
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![Part Image](["https://componentsearchengine.com/2D/0/20820083.png",null,null])
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