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GT50-4P-1H
Hirose
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1 | Connector Header Surface Mount, Right Angle 4 position 0.039" (1.00mm) | Other | GT50-4P-1H |
3
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GT50-16P-1H
Hirose
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1 | Connector Header Surface Mount, Right Angle 16 position 0.039" (1.00mm) | Other | GT50-16P-1H |
2
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GT50J301
Toshiba
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1 | IGBT Transistors 3PL IGBT PP2,DISCON(07-10)/PHASE-OUT(11-01)/OBSOLETE(11-04), | Transistor Outline, Vertical | GT50J301 |
3
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GT50MR21,Q(O
Toshiba
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1 | Toshiba GT50MR21,Q(O, IGBT Transistor, 50 A 900 V, 0.4μs, 3-Pin TO-3P | Transistor Outline, Vertical | GT50MR21,Q(O |
3
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GT50N322A
Toshiba
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1 | Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V | Transistor Outline, Vertical | GT50N322A |
3
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GT50NR21
Toshiba
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1 | (1) 6.5th generation(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.(3) Enhancement mode(4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A)(5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A)(6) High junction temperature : Tj = 175 (max) | Transistor Outline, Vertical | GT50NR21 |
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MC74VHC1GT50DFT1G-Q
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | MC74VHC1GT50DFT1G-Q |
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M74VHC1GT50DFT1G
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | M74VHC1GT50DFT1G |
3
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GT50JR21(STA1,E,S)
Toshiba
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1 | Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ | Transistor Outline, Vertical | GT50JR21(STA1,E,S) |
3
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SMA6251A1-3GT50G-50B
Amphenol
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1 | Socket; SMA; female; straight; 50Ω; THT; on PCBs; PTFE; gold-plated | Other | SMA6251A1-3GT50G-50B |
3
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SMA6251A1-3GT50G-50
Amphenol
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1 | Socket; SMA; female; straight; 50Ω; THT; on PCBs; PTFE; gold-plated | Other | SMA6251A1-3GT50G-50 |
3
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MC74VHC1GT50DBVT1G
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | MC74VHC1GT50DBVT1G |
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700B100GT500XT
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 10pF Tol 2% Las Mkg | Capacitor Chip Non-polarised | 700B100GT500XT |
3
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GT50NR21,Q(O
Toshiba
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1 | Toshiba GT50NR21,Q(O, IGBT Transistor, 50 A 1050 V, 0.45μs, 3-Pin TO-3P | Other | GT50NR21,Q(O |
3
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C0402H220F3GAGT500
Yageo Group
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1 | SMD Indust C0G HT200C, Ceramic, 22 pF, 1%, 25 VDC, 62.5 VDC, 200°C, -55°C, C0G, SMD, MLCC, High Temperature, Ultra-Stable, Low Loss, 0.1 % , 100 GOhms, 1.06 mg, 0402, 1mm, 0.5mm, 0.5mm, 0.3mm, 0.3mm, 500, 78 Weeks, 120 | Other | C0402H220F3GAGT500 |
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800B220GT500XT
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 500volts 22pF 2% NP0 | Capacitor Chip Non-polarised | 800B220GT500XT |
3
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M74VHC1GT50DTT1G
onsemi
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1 | Buffer, AHC/VHC Series, 1-Func, 1-Input, CMOS, PDSO5 | SOT23 (5-Pin) | M74VHC1GT50DTT1G |
3
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GT50JR21
Toshiba
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1 | Toshiba GT50JR21, IGBT Transistor, 50 A 600 V, 1MHz, 3-Pin TO-3P | Transistor Outline, Vertical | GT50JR21 |
3
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NLV74VHC1GT50DTT1G
onsemi
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1 | ON SEMICONDUCTOR - NLV74VHC1GT50DTT1G - BUFFER, AEC-Q100, -55 TO 125DEG C | SOT23 (5-Pin) | NLV74VHC1GT50DTT1G |
3
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GT50J325(Q)
Toshiba
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1 | Toshiba GT50J325(Q) IGBT, 50 A 600 V, 3-Pin TO-3PLH | Transistor Outline, Vertical | GT50J325(Q) |
3
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GT50JR22(STA1,E,S)
Toshiba
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1 | IGBT Transistors IGBT for Soft Switching Apps | Transistor Outline, Vertical | GT50JR22(STA1,E,S) |
3
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GT50J341
Toshiba
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1 | 600 V/50 A IGBT, Built-in Diodes, TO-3P(N) | Transistor Outline, Vertical | GT50J341 |
3
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MC74VHC1GT50DFT2G
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | MC74VHC1GT50DFT2G |
3
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M74VHC1GT50DFT2G
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | M74VHC1GT50DFT2G |
3
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MC74VHC1GT50DFT1G
onsemi
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1 | High Speed: tPD = 3.5ns (Typ) at VCC = 5V; Low threshold Inputs, TTL compatible if Vcc= 5 V: VIL = 0.8V; VIH = 2.0V; Low Power Dissipation: ICC = 1µA (Max) at TA = 25°C; CMOS-Compatible Outputs: VOH > 0.8VCC ; VOL < 0.1VCC @Load; Wide Operating Vcc Rang; Power Down Protection Provided on Inputs and Outputs; Balanced Propagation Delays; Pin and Function Compatible with Other Standard Logic Families; Chip Complexity: FETs = ≤ 100; Pb-Free Packages are Available | SOT23 (5-Pin) | MC74VHC1GT50DFT1G |
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